JP3910144B2 - 半導体発光装置およびその製造方法 - Google Patents

半導体発光装置およびその製造方法 Download PDF

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Publication number
JP3910144B2
JP3910144B2 JP2003000216A JP2003000216A JP3910144B2 JP 3910144 B2 JP3910144 B2 JP 3910144B2 JP 2003000216 A JP2003000216 A JP 2003000216A JP 2003000216 A JP2003000216 A JP 2003000216A JP 3910144 B2 JP3910144 B2 JP 3910144B2
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JP
Japan
Prior art keywords
metal body
lead frame
led chip
light emitting
emitting device
Prior art date
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Expired - Fee Related
Application number
JP2003000216A
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English (en)
Japanese (ja)
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JP2004214436A5 (enExample
JP2004214436A (ja
Inventor
靖二 竹中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32708764&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3910144(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2003000216A priority Critical patent/JP3910144B2/ja
Priority to CNB2003101205693A priority patent/CN1306626C/zh
Priority to CNB2007100047826A priority patent/CN100466312C/zh
Priority to US10/745,764 priority patent/US7012277B2/en
Publication of JP2004214436A publication Critical patent/JP2004214436A/ja
Publication of JP2004214436A5 publication Critical patent/JP2004214436A5/ja
Application granted granted Critical
Publication of JP3910144B2 publication Critical patent/JP3910144B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

Landscapes

  • Led Device Packages (AREA)
JP2003000216A 2003-01-06 2003-01-06 半導体発光装置およびその製造方法 Expired - Fee Related JP3910144B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003000216A JP3910144B2 (ja) 2003-01-06 2003-01-06 半導体発光装置およびその製造方法
CNB2003101205693A CN1306626C (zh) 2003-01-06 2003-12-12 半导体发光器件
CNB2007100047826A CN100466312C (zh) 2003-01-06 2003-12-12 半导体发光器件制造方法
US10/745,764 US7012277B2 (en) 2003-01-06 2003-12-23 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003000216A JP3910144B2 (ja) 2003-01-06 2003-01-06 半導体発光装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006333323A Division JP2007067452A (ja) 2006-12-11 2006-12-11 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2004214436A JP2004214436A (ja) 2004-07-29
JP2004214436A5 JP2004214436A5 (enExample) 2006-11-02
JP3910144B2 true JP3910144B2 (ja) 2007-04-25

Family

ID=32708764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003000216A Expired - Fee Related JP3910144B2 (ja) 2003-01-06 2003-01-06 半導体発光装置およびその製造方法

Country Status (3)

Country Link
US (1) US7012277B2 (enExample)
JP (1) JP3910144B2 (enExample)
CN (2) CN1306626C (enExample)

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Also Published As

Publication number Publication date
CN1306626C (zh) 2007-03-21
US20040135156A1 (en) 2004-07-15
CN1518135A (zh) 2004-08-04
JP2004214436A (ja) 2004-07-29
CN1992365A (zh) 2007-07-04
CN100466312C (zh) 2009-03-04
US7012277B2 (en) 2006-03-14

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