CN100340008C - 背孔结构氮化镓基发光二极管的制作方法 - Google Patents
背孔结构氮化镓基发光二极管的制作方法 Download PDFInfo
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- CN100340008C CN100340008C CNB2004100810109A CN200410081010A CN100340008C CN 100340008 C CN100340008 C CN 100340008C CN B2004100810109 A CNB2004100810109 A CN B2004100810109A CN 200410081010 A CN200410081010 A CN 200410081010A CN 100340008 C CN100340008 C CN 100340008C
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Abstract
Description
Claims (5)
Priority Applications (2)
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US20070141749A1 (en) * | 2005-12-20 | 2007-06-21 | Yi-Fong Lin | Die attachment method for LED chip and structure thereof |
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JP2009032970A (ja) * | 2007-07-27 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
WO2010111834A1 (en) * | 2009-04-01 | 2010-10-07 | Hong Kong Applied Science and Technology Research Institute Co. Ltd | Quasi-vertical light emitting diode |
US8471280B2 (en) * | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
CN101740692B (zh) * | 2009-12-24 | 2012-10-17 | 上海蓝光科技有限公司 | 提高led芯片亮度的方法 |
US8242510B2 (en) * | 2010-01-28 | 2012-08-14 | Intersil Americas Inc. | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
US8466563B2 (en) | 2010-05-19 | 2013-06-18 | The Johns Hopkins University | Apparatus and methods for 3-D stacking of thinned die |
CN102368528B (zh) * | 2011-10-25 | 2014-06-04 | 晶科电子(广州)有限公司 | 一种具有高散热性能的发光器件及其制造方法 |
TW201424057A (zh) * | 2012-12-03 | 2014-06-16 | Ritedia Corp | 晶片板上封裝結構及其製備方法 |
US20170104135A1 (en) * | 2015-10-13 | 2017-04-13 | Sensor Electronic Technology, Inc. | Light Emitting Diode Mounting Structure |
CN106098887A (zh) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | 一种紫外外延片结构 |
CN111261766A (zh) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | 一种倒装薄膜led芯片结构及其制备方法 |
CN111599747B (zh) * | 2020-05-09 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | 蓝宝石上石墨烯射频mmic芯片上通孔的制备方法 |
CN112993141B (zh) * | 2021-02-04 | 2023-04-07 | 深圳市聚飞光电股份有限公司 | 一种led支架组件、发光器件及发光装置 |
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