JP3854839B2 - 磁気抵抗素子を用いた不揮発固体メモリ - Google Patents

磁気抵抗素子を用いた不揮発固体メモリ Download PDF

Info

Publication number
JP3854839B2
JP3854839B2 JP2001306540A JP2001306540A JP3854839B2 JP 3854839 B2 JP3854839 B2 JP 3854839B2 JP 2001306540 A JP2001306540 A JP 2001306540A JP 2001306540 A JP2001306540 A JP 2001306540A JP 3854839 B2 JP3854839 B2 JP 3854839B2
Authority
JP
Japan
Prior art keywords
magnetic
film
magnetic layer
layer
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001306540A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003110162A (ja
JP2003110162A5 (enExample
Inventor
昭雄 小金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001306540A priority Critical patent/JP3854839B2/ja
Priority to US10/260,065 priority patent/US6987652B2/en
Publication of JP2003110162A publication Critical patent/JP2003110162A/ja
Publication of JP2003110162A5 publication Critical patent/JP2003110162A5/ja
Application granted granted Critical
Publication of JP3854839B2 publication Critical patent/JP3854839B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2001306540A 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ Expired - Fee Related JP3854839B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001306540A JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ
US10/260,065 US6987652B2 (en) 2001-10-02 2002-10-01 Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001306540A JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ

Publications (3)

Publication Number Publication Date
JP2003110162A JP2003110162A (ja) 2003-04-11
JP2003110162A5 JP2003110162A5 (enExample) 2005-04-28
JP3854839B2 true JP3854839B2 (ja) 2006-12-06

Family

ID=19126160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001306540A Expired - Fee Related JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ

Country Status (2)

Country Link
US (1) US6987652B2 (enExample)
JP (1) JP3854839B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919826B2 (en) 2007-04-24 2011-04-05 Kabushiki Kaisha Toshiba Magnetoresistive element and manufacturing method thereof

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520611B1 (ko) * 2003-03-03 2005-10-10 주식회사 하이닉스반도체 자기저항 램 및 그 제조 방법
US7173847B2 (en) * 2003-05-20 2007-02-06 Magsil Corporation Magnetic storage cell
JP4142993B2 (ja) 2003-07-23 2008-09-03 株式会社東芝 磁気メモリ装置の製造方法
US6972985B2 (en) * 2004-05-03 2005-12-06 Unity Semiconductor Corporation Memory element having islands
US7169623B2 (en) * 2004-09-09 2007-01-30 Tegal Corporation System and method for processing a wafer including stop-on-aluminum processing
DE102004044413A1 (de) * 2004-09-14 2006-03-16 Infineon Technologies Ag Halbleiterspeicherbauelement
JP2006156685A (ja) * 2004-11-29 2006-06-15 Sony Corp 記憶素子及びメモリ
US20070054450A1 (en) * 2005-09-07 2007-03-08 Magic Technologies, Inc. Structure and fabrication of an MRAM cell
US20110007426A1 (en) 2009-07-13 2011-01-13 Seagate Technology Llc Trapezoidal back bias and trilayer reader geometry to enhance device performance
RU2433422C1 (ru) * 2010-03-19 2011-11-10 Учреждение Российской академии наук Институт проблем управления им. В.А. Трапезникова РАН Высокочастотный магниточувствительный наноэлемент
JP5214691B2 (ja) * 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
JP5492144B2 (ja) * 2011-05-27 2014-05-14 株式会社日立製作所 垂直磁化磁気抵抗効果素子及び磁気メモリ
US9236561B2 (en) * 2011-09-12 2016-01-12 Samsung Electronics Co., Ltd. Method and system for providing multiple self-aligned logic cells in a single stack
JP5535161B2 (ja) 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
GB2526456B (en) * 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9048128B2 (en) * 2013-10-03 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd Inductor structure with magnetic material
JP6586974B2 (ja) 2017-04-10 2019-10-09 Tdk株式会社 磁気抵抗効果素子
CN112768606B (zh) * 2019-10-21 2024-08-06 联华电子股份有限公司 存储器元件结构及其制造方法
CN112992660B (zh) * 2021-05-10 2021-08-03 度亘激光技术（苏州）有限公司 半导体结构形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69331492T2 (de) * 1992-10-23 2002-08-29 Sony Corp., Tokio/Tokyo Batteriesatz
JP3272108B2 (ja) * 1993-07-07 2002-04-08 三洋電機株式会社 パック電池
US5477133A (en) * 1993-07-29 1995-12-19 Etcon Corporation Device for measuring a wide range of voltages and for determining continuity using visual and tactile indicators
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
US5806444A (en) * 1994-02-25 1998-09-15 Fm Industrie Method and an installation for treating waste by drying, sublimination, oxidation, and combustion
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
JP3069498B2 (ja) * 1994-09-01 2000-07-24 富士通株式会社 充放電装置および電子機器
JPH1079113A (ja) * 1996-09-04 1998-03-24 Hitachi Ltd 面内磁気記録媒体およびこれを用いた磁気記憶装置
KR100193736B1 (ko) * 1996-09-17 1999-06-15 윤종용 배터리 보호 기능을 갖는 배터리 팩
US5748524A (en) 1996-09-23 1998-05-05 Motorola, Inc. MRAM with pinned ends
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
JP3679593B2 (ja) 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
JP3050218B1 (ja) * 1998-12-21 2000-06-12 株式会社日立製作所 磁気ヘッド、それを用いた磁気記録再生装置及び磁性メモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919826B2 (en) 2007-04-24 2011-04-05 Kabushiki Kaisha Toshiba Magnetoresistive element and manufacturing method thereof

Also Published As

Publication number Publication date
US20030067800A1 (en) 2003-04-10
US6987652B2 (en) 2006-01-17
JP2003110162A (ja) 2003-04-11

Similar Documents

Publication Publication Date Title
JP3854839B2 (ja) 磁気抵抗素子を用いた不揮発固体メモリ
JP3891540B2 (ja) 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびｍｒａｍ
JP3667244B2 (ja) 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
JP3679593B2 (ja) 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
CN100447892C (zh) 具有软基准层的磁存储器件
US7035138B2 (en) Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
JP2002280637A (ja) 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置
JP2003281705A (ja) 磁気ヘッド、磁気ヘッドジンバルアッセンブリ、磁気記録再生装置及び磁性メモリ
JP2002314164A (ja) 磁気トンネル素子及びその製造方法、薄膜磁気ヘッド、磁気メモリ、並びに磁気センサ
JP4596230B2 (ja) 磁気メモリデバイスおよびその製造方法
JP3634761B2 (ja) 磁気抵抗素子、該磁気抵抗素子を用いたメモリ素子及び磁気ランダムアクセスメモリ、並びに記録再生方法
JP3559722B2 (ja) 磁気抵抗素子、固体メモリ
US6898115B2 (en) Magnetoresistive element, and magnetic memory using the same
JP3848119B2 (ja) 磁気抵抗効果を用いた不揮発固体メモリ
JP2003142753A (ja) 磁性膜の磁化反転方法、磁気抵抗効果膜及びそれを用いた磁気メモリ
JP4667763B2 (ja) 磁気記憶素子および半導体装置
JP4136028B2 (ja) 磁性薄膜メモリ素子、それを用いた磁性薄膜メモリ及びその記録再生方法
JPH11154389A (ja) 磁気抵抗素子、磁性薄膜メモリ素子および該メモリ素子の記録再生方法
JP3872962B2 (ja) 磁気抵抗効果素子及び磁気記憶装置
JP2004296858A (ja) 磁気記憶素子及び磁気記憶装置
JP3658331B2 (ja) メモリ素子の記録再生方法、磁気抵抗素子及び磁気ランダムアクセスメモリ
JP2003031773A (ja) 磁気メモリ素子及びその記録方法、並びにその磁気メモリ素子を用いたメモリ
JP2002124717A (ja) 磁気抵抗効果素子及びその製造方法並びにその磁気抵抗効果素子を用いた磁気薄膜メモリ
JP2002280642A (ja) 磁気抵抗効果素子、磁気記憶装置、携帯端末装置、磁気抵抗効果ヘッド、磁気再生装置
JP3854793B2 (ja) 磁気抵抗効果素子を用いたメモリ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040618

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040618

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060605

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060829

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060911

R150 Certificate of patent or registration of utility model

Ref document number: 3854839

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090915

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100915

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100915

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130915

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees