JP2003110162A5 - - Google Patents

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Publication number
JP2003110162A5
JP2003110162A5 JP2001306540A JP2001306540A JP2003110162A5 JP 2003110162 A5 JP2003110162 A5 JP 2003110162A5 JP 2001306540 A JP2001306540 A JP 2001306540A JP 2001306540 A JP2001306540 A JP 2001306540A JP 2003110162 A5 JP2003110162 A5 JP 2003110162A5
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JP
Japan
Prior art keywords
magnetic layer
magnetoresistive element
magnetic
layer
recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001306540A
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English (en)
Japanese (ja)
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JP3854839B2 (ja
JP2003110162A (ja
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Publication date
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Priority to JP2001306540A priority Critical patent/JP3854839B2/ja
Priority claimed from JP2001306540A external-priority patent/JP3854839B2/ja
Priority to US10/260,065 priority patent/US6987652B2/en
Publication of JP2003110162A publication Critical patent/JP2003110162A/ja
Publication of JP2003110162A5 publication Critical patent/JP2003110162A5/ja
Application granted granted Critical
Publication of JP3854839B2 publication Critical patent/JP3854839B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001306540A 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ Expired - Fee Related JP3854839B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001306540A JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ
US10/260,065 US6987652B2 (en) 2001-10-02 2002-10-01 Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001306540A JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ

Publications (3)

Publication Number Publication Date
JP2003110162A JP2003110162A (ja) 2003-04-11
JP2003110162A5 true JP2003110162A5 (enExample) 2005-04-28
JP3854839B2 JP3854839B2 (ja) 2006-12-06

Family

ID=19126160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001306540A Expired - Fee Related JP3854839B2 (ja) 2001-10-02 2001-10-02 磁気抵抗素子を用いた不揮発固体メモリ

Country Status (2)

Country Link
US (1) US6987652B2 (enExample)
JP (1) JP3854839B2 (enExample)

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Publication number Priority date Publication date Assignee Title
KR100520611B1 (ko) * 2003-03-03 2005-10-10 주식회사 하이닉스반도체 자기저항 램 및 그 제조 방법
US7173847B2 (en) * 2003-05-20 2007-02-06 Magsil Corporation Magnetic storage cell
JP4142993B2 (ja) 2003-07-23 2008-09-03 株式会社東芝 磁気メモリ装置の製造方法
US6972985B2 (en) * 2004-05-03 2005-12-06 Unity Semiconductor Corporation Memory element having islands
US7169623B2 (en) * 2004-09-09 2007-01-30 Tegal Corporation System and method for processing a wafer including stop-on-aluminum processing
DE102004044413A1 (de) * 2004-09-14 2006-03-16 Infineon Technologies Ag Halbleiterspeicherbauelement
JP2006156685A (ja) * 2004-11-29 2006-06-15 Sony Corp 記憶素子及びメモリ
US20070054450A1 (en) * 2005-09-07 2007-03-08 Magic Technologies, Inc. Structure and fabrication of an MRAM cell
US7919826B2 (en) 2007-04-24 2011-04-05 Kabushiki Kaisha Toshiba Magnetoresistive element and manufacturing method thereof
US20110007426A1 (en) 2009-07-13 2011-01-13 Seagate Technology Llc Trapezoidal back bias and trilayer reader geometry to enhance device performance
RU2433422C1 (ru) * 2010-03-19 2011-11-10 Учреждение Российской академии наук Институт проблем управления им. В.А. Трапезникова РАН Высокочастотный магниточувствительный наноэлемент
JP5214691B2 (ja) * 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
JP5492144B2 (ja) * 2011-05-27 2014-05-14 株式会社日立製作所 垂直磁化磁気抵抗効果素子及び磁気メモリ
US9236561B2 (en) * 2011-09-12 2016-01-12 Samsung Electronics Co., Ltd. Method and system for providing multiple self-aligned logic cells in a single stack
JP5535161B2 (ja) 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
GB2526456B (en) * 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
US9048128B2 (en) * 2013-10-03 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd Inductor structure with magnetic material
JP6586974B2 (ja) 2017-04-10 2019-10-09 Tdk株式会社 磁気抵抗効果素子
CN112768606B (zh) * 2019-10-21 2024-08-06 联华电子股份有限公司 存储器元件结构及其制造方法
CN112992660B (zh) * 2021-05-10 2021-08-03 度亘激光技术（苏州）有限公司 半导体结构形成方法

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DE69331492T2 (de) * 1992-10-23 2002-08-29 Sony Corp., Tokio/Tokyo Batteriesatz
JP3272108B2 (ja) * 1993-07-07 2002-04-08 三洋電機株式会社 パック電池
US5477133A (en) * 1993-07-29 1995-12-19 Etcon Corporation Device for measuring a wide range of voltages and for determining continuity using visual and tactile indicators
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
US5806444A (en) * 1994-02-25 1998-09-15 Fm Industrie Method and an installation for treating waste by drying, sublimination, oxidation, and combustion
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
JP3069498B2 (ja) * 1994-09-01 2000-07-24 富士通株式会社 充放電装置および電子機器
JPH1079113A (ja) * 1996-09-04 1998-03-24 Hitachi Ltd 面内磁気記録媒体およびこれを用いた磁気記憶装置
KR100193736B1 (ko) * 1996-09-17 1999-06-15 윤종용 배터리 보호 기능을 갖는 배터리 팩
US5748524A (en) 1996-09-23 1998-05-05 Motorola, Inc. MRAM with pinned ends
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
JP3679593B2 (ja) 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
US6055179A (en) 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
JP3050218B1 (ja) * 1998-12-21 2000-06-12 株式会社日立製作所 磁気ヘッド、それを用いた磁気記録再生装置及び磁性メモリ装置

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