JP3764343B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3764343B2
JP3764343B2 JP2001054945A JP2001054945A JP3764343B2 JP 3764343 B2 JP3764343 B2 JP 3764343B2 JP 2001054945 A JP2001054945 A JP 2001054945A JP 2001054945 A JP2001054945 A JP 2001054945A JP 3764343 B2 JP3764343 B2 JP 3764343B2
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Japan
Prior art keywords
substrate
layer
forming
buffer layer
manufacturing
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Expired - Fee Related
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JP2001054945A
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English (en)
Japanese (ja)
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JP2002261282A5 (https=
JP2002261282A (ja
Inventor
知子 末代
明夫 中川
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2001054945A priority Critical patent/JP3764343B2/ja
Priority to EP02004311A priority patent/EP1237200A3/en
Priority to US10/084,051 priority patent/US6683343B2/en
Publication of JP2002261282A publication Critical patent/JP2002261282A/ja
Publication of JP2002261282A5 publication Critical patent/JP2002261282A5/ja
Application granted granted Critical
Publication of JP3764343B2 publication Critical patent/JP3764343B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
JP2001054945A 2001-02-28 2001-02-28 半導体装置の製造方法 Expired - Fee Related JP3764343B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001054945A JP3764343B2 (ja) 2001-02-28 2001-02-28 半導体装置の製造方法
EP02004311A EP1237200A3 (en) 2001-02-28 2002-02-28 High voltage semiconductor device and method for manufacturing the same
US10/084,051 US6683343B2 (en) 2001-02-28 2002-02-28 High voltage semiconductor device having two buffer layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001054945A JP3764343B2 (ja) 2001-02-28 2001-02-28 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005312923A Division JP4372082B2 (ja) 2005-10-27 2005-10-27 半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2002261282A JP2002261282A (ja) 2002-09-13
JP2002261282A5 JP2002261282A5 (https=) 2005-08-04
JP3764343B2 true JP3764343B2 (ja) 2006-04-05

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Family Applications (1)

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JP2001054945A Expired - Fee Related JP3764343B2 (ja) 2001-02-28 2001-02-28 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US6683343B2 (https=)
EP (1) EP1237200A3 (https=)
JP (1) JP3764343B2 (https=)

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US8283697B2 (en) 2009-12-04 2012-10-09 Fuji Electric Co., Ltd. Internal combustion engine igniter semiconductor device

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CN109712885A (zh) * 2018-12-17 2019-05-03 成都森未科技有限公司 一种半导体器件缓冲层制造方法
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US8283697B2 (en) 2009-12-04 2012-10-09 Fuji Electric Co., Ltd. Internal combustion engine igniter semiconductor device

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Publication number Publication date
US20020117712A1 (en) 2002-08-29
US6683343B2 (en) 2004-01-27
JP2002261282A (ja) 2002-09-13
EP1237200A2 (en) 2002-09-04
EP1237200A3 (en) 2004-06-23

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