JP3193579B2 - ゲート駆動回路及びゲート駆動電圧を発生する方法 - Google Patents
ゲート駆動回路及びゲート駆動電圧を発生する方法Info
- Publication number
- JP3193579B2 JP3193579B2 JP32165994A JP32165994A JP3193579B2 JP 3193579 B2 JP3193579 B2 JP 3193579B2 JP 32165994 A JP32165994 A JP 32165994A JP 32165994 A JP32165994 A JP 32165994A JP 3193579 B2 JP3193579 B2 JP 3193579B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- region
- mosfet
- current blocking
- charge pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 132
- 230000002457 bidirectional effect Effects 0.000 claims description 128
- 210000000746 body region Anatomy 0.000 claims description 28
- 230000015556 catabolic process Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/901—MOSFET substrate bias
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/160,560 | 1993-11-30 | ||
| US08/160,560 US5510747A (en) | 1993-11-30 | 1993-11-30 | Gate drive technique for a bidirectional blocking lateral MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0837303A JPH0837303A (ja) | 1996-02-06 |
| JP3193579B2 true JP3193579B2 (ja) | 2001-07-30 |
Family
ID=22577394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32165994A Expired - Fee Related JP3193579B2 (ja) | 1993-11-30 | 1994-11-30 | ゲート駆動回路及びゲート駆動電圧を発生する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US5510747A (de) |
| EP (1) | EP0655837B1 (de) |
| JP (1) | JP3193579B2 (de) |
| DE (2) | DE655837T1 (de) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0627807B1 (de) * | 1993-05-27 | 1998-08-12 | Fujitsu Limited | Energieleitungsverbindungsschaltung und entsprechender Schalter mit integrierter Schaltung |
| US5578961A (en) * | 1994-07-27 | 1996-11-26 | Motorola, Inc. | MMIC bias apparatus and method |
| US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
| JPH08204528A (ja) * | 1995-01-23 | 1996-08-09 | Sony Corp | スイツチ回路及び複合スイツチ回路 |
| AU683813B2 (en) * | 1996-02-26 | 1997-11-20 | Toyoda Gosei Co. Ltd. | Steering wheel, mounting structure thereof and boss structure thereof |
| US5689144A (en) * | 1996-05-15 | 1997-11-18 | Siliconix Incorporated | Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance |
| US5744994A (en) * | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
| TW320773B (en) * | 1996-11-25 | 1997-11-21 | Winbond Electronics Corp | Multi-finger MOS component |
| EP0887933A1 (de) * | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Schaltung zum Abschalten eines LDMOS-Transistors in Anwesenheit von einem Gegenstrom |
| US6268242B1 (en) * | 1997-12-31 | 2001-07-31 | Richard K. Williams | Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact |
| US6172383B1 (en) | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
| JP3758366B2 (ja) * | 1998-05-20 | 2006-03-22 | 富士通株式会社 | 半導体装置 |
| US6538279B1 (en) * | 1999-03-10 | 2003-03-25 | Richard A. Blanchard | High-side switch with depletion-mode device |
| US6628159B2 (en) | 1999-09-17 | 2003-09-30 | International Business Machines Corporation | SOI voltage-tolerant body-coupled pass transistor |
| US6404269B1 (en) * | 1999-09-17 | 2002-06-11 | International Business Machines Corporation | Low power SOI ESD buffer driver networks having dynamic threshold MOSFETS |
| TW508485B (en) | 2000-04-13 | 2002-11-01 | Infineon Technologies Ag | Voltage-converter |
| SE518797C2 (sv) * | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar |
| US6930473B2 (en) | 2001-08-23 | 2005-08-16 | Fairchild Semiconductor Corporation | Method and circuit for reducing losses in DC-DC converters |
| US6486726B1 (en) * | 2001-05-18 | 2002-11-26 | Eugene Robert Worley, Sr. | LED driver circuit with a boosted voltage output |
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| AU2003280057A1 (en) * | 2002-11-18 | 2004-06-15 | Koninklijke Philips Electronics N.V. | Integrated floating power transfer device with logic level control and method |
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| US7038917B2 (en) * | 2002-12-27 | 2006-05-02 | Vlt, Inc. | Low loss, high density array interconnection |
| JP3814589B2 (ja) * | 2003-05-23 | 2006-08-30 | 株式会社東芝 | スイッチ回路及びバススイッチ回路 |
| JP4397210B2 (ja) * | 2003-10-20 | 2010-01-13 | ローム株式会社 | 半導体装置 |
| TWI249682B (en) * | 2004-05-19 | 2006-02-21 | Quanta Comp Inc | Blade server system |
| US7667519B2 (en) * | 2005-05-23 | 2010-02-23 | Texas Instruments Incorporated | Biasing circuit for pass transistor for voltage level translator circuit |
| JP2007005492A (ja) * | 2005-06-22 | 2007-01-11 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
| US7268613B2 (en) * | 2005-10-31 | 2007-09-11 | International Business Machines Corporation | Transistor switch with integral body connection to prevent latchup |
| JP4528321B2 (ja) * | 2007-09-26 | 2010-08-18 | シャープ株式会社 | スイッチング回路、回路、並びにスイッチング回路及び駆動パルス生成回路を含む回路 |
| JP2009165227A (ja) * | 2007-12-28 | 2009-07-23 | Nec Electronics Corp | 電圧変換回路 |
| EP2226937B1 (de) * | 2009-03-03 | 2012-02-08 | STMicroelectronics (Grenoble) SAS | Analogschalter |
| US8183892B2 (en) | 2009-06-05 | 2012-05-22 | Fairchild Semiconductor Corporation | Monolithic low impedance dual gate current sense MOSFET |
| KR101829309B1 (ko) | 2010-01-22 | 2018-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI478464B (zh) * | 2010-11-09 | 2015-03-21 | Hon Hai Prec Ind Co Ltd | 電池控制電路 |
| US20130032854A1 (en) * | 2011-08-01 | 2013-02-07 | Lui Chao-Cheng | Rectirier |
| US9669427B2 (en) | 2012-01-24 | 2017-06-06 | Texas Instruments Incorporated | Methods and systems for ultrasound control with bi-directional transistor |
| US9331689B2 (en) | 2012-04-27 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Power supply circuit and semiconductor device including the same |
| US9166048B2 (en) * | 2012-09-16 | 2015-10-20 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
| US9391189B2 (en) | 2012-09-16 | 2016-07-12 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
| US9660038B2 (en) | 2012-09-16 | 2017-05-23 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
| JP6065262B2 (ja) * | 2012-10-12 | 2017-01-25 | 富士電機株式会社 | 電源装置 |
| US9571086B1 (en) | 2012-12-05 | 2017-02-14 | Lockheed Martin Corporation | Bi-directional switch |
| KR101863973B1 (ko) * | 2013-07-08 | 2018-06-04 | 매그나칩 반도체 유한회사 | 씨모스 아날로그 스위치 회로 |
| JP6033199B2 (ja) * | 2013-10-16 | 2016-11-30 | 三菱電機株式会社 | 降圧チョッパ回路 |
| CN109314511B (zh) * | 2016-05-12 | 2023-10-20 | 因特莱索有限责任公司 | 电子开关和调光器 |
| JP2018085567A (ja) * | 2016-11-21 | 2018-05-31 | 株式会社オートネットワーク技術研究所 | スイッチ回路及び電源装置 |
| JP6298144B2 (ja) * | 2016-12-23 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10819336B2 (en) | 2017-12-28 | 2020-10-27 | Intelesol, Llc | Electronic switch and dimmer |
| US10879691B2 (en) * | 2018-03-27 | 2020-12-29 | Veoneer Us Inc. | Unlockable switch inhibitor |
| US11671029B2 (en) | 2018-07-07 | 2023-06-06 | Intelesol, Llc | AC to DC converters |
| US11056981B2 (en) | 2018-07-07 | 2021-07-06 | Intelesol, Llc | Method and apparatus for signal extraction with sample and hold and release |
| US11581725B2 (en) | 2018-07-07 | 2023-02-14 | Intelesol, Llc | Solid-state power interrupters |
| US11205011B2 (en) | 2018-09-27 | 2021-12-21 | Amber Solutions, Inc. | Privacy and the management of permissions |
| US11334388B2 (en) | 2018-09-27 | 2022-05-17 | Amber Solutions, Inc. | Infrastructure support to enhance resource-constrained device capabilities |
| US11349296B2 (en) | 2018-10-01 | 2022-05-31 | Intelesol, Llc | Solid-state circuit interrupters |
| US10985548B2 (en) | 2018-10-01 | 2021-04-20 | Intelesol, Llc | Circuit interrupter with optical connection |
| CN109474269B (zh) * | 2018-10-31 | 2023-01-13 | 矽力杰半导体技术(杭州)有限公司 | 浮动开关及其驱动电路 |
| CN113455105A (zh) | 2018-12-17 | 2021-09-28 | 因特莱索有限责任公司 | Ac驱动的发光二极管系统 |
| CN110137243B (zh) | 2019-04-03 | 2024-03-29 | 杭州士兰微电子股份有限公司 | 双向功率器件及其制造方法 |
| US11373831B2 (en) | 2019-05-18 | 2022-06-28 | Amber Solutions, Inc. | Intelligent circuit breakers |
| JP2023511406A (ja) | 2020-01-21 | 2023-03-17 | アンバー セミコンダクター，インク． | インテリジェント回路遮断 |
| WO2022036016A1 (en) | 2020-08-11 | 2022-02-17 | Amber Solutions, Inc. | Intelligent energy source monitoring and selection control system |
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| US4404477A (en) * | 1978-02-22 | 1983-09-13 | Supertex, Inc. | Detection circuit and structure therefor |
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| DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
| JPS5816542A (ja) * | 1981-07-23 | 1983-01-31 | Toshiba Corp | 半導体集積回路 |
| JPS58165422A (ja) * | 1982-03-25 | 1983-09-30 | Sanyo Electric Co Ltd | スイツチ回路 |
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| JPH0595273A (ja) * | 1990-11-21 | 1993-04-16 | Nippon Steel Corp | 半導体装置及びこれを用いた集積回路 |
| DE4120394A1 (de) * | 1991-06-20 | 1992-12-24 | Bosch Gmbh Robert | Monolithisch integrierte schaltungsanordnung |
| JPH05183159A (ja) * | 1992-01-07 | 1993-07-23 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US5420451A (en) * | 1993-11-30 | 1995-05-30 | Siliconix Incorporated | Bidirectional blocking lateral MOSFET with improved on-resistance |
-
1993
- 1993-11-30 US US08/160,560 patent/US5510747A/en not_active Expired - Lifetime
-
1994
- 1994-11-30 EP EP94308841A patent/EP0655837B1/de not_active Expired - Lifetime
- 1994-11-30 DE DE0655837T patent/DE655837T1/de active Pending
- 1994-11-30 DE DE69416944T patent/DE69416944D1/de not_active Expired - Lifetime
- 1994-11-30 JP JP32165994A patent/JP3193579B2/ja not_active Expired - Fee Related
-
1995
- 1995-12-08 US US08/569,334 patent/US5612566A/en not_active Expired - Lifetime
-
1996
- 1996-04-22 US US08/636,258 patent/US5731732A/en not_active Expired - Lifetime
-
1997
- 1997-08-05 US US08/907,216 patent/US5909139A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5731732A (en) | 1998-03-24 |
| JPH0837303A (ja) | 1996-02-06 |
| EP0655837B1 (de) | 1999-03-10 |
| US5510747A (en) | 1996-04-23 |
| US5909139A (en) | 1999-06-01 |
| US5612566A (en) | 1997-03-18 |
| EP0655837A2 (de) | 1995-05-31 |
| DE69416944D1 (de) | 1999-04-15 |
| DE655837T1 (de) | 1996-02-29 |
| EP0655837A3 (de) | 1996-05-01 |
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