JP3039048B2 - ポジ型感放射線性レジスト組成物 - Google Patents

ポジ型感放射線性レジスト組成物

Info

Publication number
JP3039048B2
JP3039048B2 JP3287648A JP28764891A JP3039048B2 JP 3039048 B2 JP3039048 B2 JP 3039048B2 JP 3287648 A JP3287648 A JP 3287648A JP 28764891 A JP28764891 A JP 28764891A JP 3039048 B2 JP3039048 B2 JP 3039048B2
Authority
JP
Japan
Prior art keywords
resist composition
radiation
positive
resist
sensitive resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3287648A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05127374A (ja
Inventor
洋 森馬
弘俊 中西
保則 上谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP3287648A priority Critical patent/JP3039048B2/ja
Priority to TW081107482A priority patent/TW269019B/zh
Priority to CA002078830A priority patent/CA2078830A1/en
Priority to EP92117200A priority patent/EP0539778B1/en
Priority to DE69226600T priority patent/DE69226600T2/de
Priority to US07/960,695 priority patent/US5275910A/en
Priority to KR1019920019477A priority patent/KR100192769B1/ko
Priority to MX9206155A priority patent/MX9206155A/es
Publication of JPH05127374A publication Critical patent/JPH05127374A/ja
Application granted granted Critical
Publication of JP3039048B2 publication Critical patent/JP3039048B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
JP3287648A 1991-11-01 1991-11-01 ポジ型感放射線性レジスト組成物 Expired - Lifetime JP3039048B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP3287648A JP3039048B2 (ja) 1991-11-01 1991-11-01 ポジ型感放射線性レジスト組成物
CA002078830A CA2078830A1 (en) 1991-11-01 1992-09-22 Positive type radiation-sensitive resist composition
TW081107482A TW269019B (enExample) 1991-11-01 1992-09-22
DE69226600T DE69226600T2 (de) 1991-11-01 1992-10-08 Strahlungsempfindliche positiv-arbeitende Resistzusammensetzung
EP92117200A EP0539778B1 (en) 1991-11-01 1992-10-08 Positive type radiation-sensitive resist composition
US07/960,695 US5275910A (en) 1991-11-01 1992-10-14 Positive radiation-sensitive resist composition
KR1019920019477A KR100192769B1 (ko) 1991-11-01 1992-10-22 포지티브형 감방사선 레지스트 조성물
MX9206155A MX9206155A (es) 1991-11-01 1992-10-26 Composicion de capa protectora sensible a la radiacion, tipo positiva.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3287648A JP3039048B2 (ja) 1991-11-01 1991-11-01 ポジ型感放射線性レジスト組成物

Publications (2)

Publication Number Publication Date
JPH05127374A JPH05127374A (ja) 1993-05-25
JP3039048B2 true JP3039048B2 (ja) 2000-05-08

Family

ID=17719932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3287648A Expired - Lifetime JP3039048B2 (ja) 1991-11-01 1991-11-01 ポジ型感放射線性レジスト組成物

Country Status (8)

Country Link
US (1) US5275910A (enExample)
EP (1) EP0539778B1 (enExample)
JP (1) JP3039048B2 (enExample)
KR (1) KR100192769B1 (enExample)
CA (1) CA2078830A1 (enExample)
DE (1) DE69226600T2 (enExample)
MX (1) MX9206155A (enExample)
TW (1) TW269019B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996022563A1 (en) * 1995-01-17 1996-07-25 Nippon Zeon Co., Ltd. Positive resist composition
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
JP3433017B2 (ja) * 1995-08-31 2003-08-04 株式会社東芝 感光性組成物
JPH1124271A (ja) * 1997-06-30 1999-01-29 Kurarianto Japan Kk 高耐熱性放射線感応性レジスト組成物
JP4057704B2 (ja) * 1998-07-10 2008-03-05 本州化学工業株式会社 ９，９−ビス（アルキル置換−４−ヒドロキシフェニル）フルオレン類とその製造方法
JP4429620B2 (ja) * 2002-10-15 2010-03-10 出光興産株式会社 感放射線性有機化合物
EP2381308B1 (en) * 2003-06-23 2015-07-29 Sumitomo Bakelite Co., Ltd. Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
WO2005029189A1 (ja) * 2003-09-18 2005-03-31 Mitsubishi Gas Chemical Company, Inc. レジスト用化合物および感放射線性組成物
US7303855B2 (en) 2003-10-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
JP4575680B2 (ja) * 2004-02-23 2010-11-04 大阪瓦斯株式会社 新規フルオレン化合物
WO2005097725A1 (ja) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物
JP4678195B2 (ja) * 2005-02-03 2011-04-27 三菱瓦斯化学株式会社 フェナントレンキノン誘導体及びその製造方法
DE102008017591A1 (de) * 2008-04-07 2009-10-08 Merck Patent Gmbh Neue Materialien für organische Elektrolumineszenzvorrichtungen
KR100913058B1 (ko) * 2008-08-25 2009-08-20 금호석유화학 주식회사 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자
WO2016148176A1 (ja) * 2015-03-19 2016-09-22 東レ株式会社 ポジ型感光性樹脂組成物、硬化膜、ｔｆｔ基板、層間絶縁膜、表示装置、およびその製造方法
CN112745201A (zh) * 2020-12-25 2021-05-04 长春长光宇航复合材料有限公司 含芴环结构生物基双酚单体、生物基环氧树脂单体、生物基环氧树脂材料及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
AT393502B (de) * 1989-04-17 1991-11-11 Isovolta Verfahren zur synthese von 9,9-bis(4-hydroxyphenyl)fluoren
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
JPH087435B2 (ja) * 1989-12-28 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
JP2629403B2 (ja) * 1990-04-28 1997-07-09 東レ株式会社 ポジ型フォトレジスト組成物
JPH0413146A (ja) * 1990-05-02 1992-01-17 Sumitomo Chem Co Ltd 新規レジスト組成物
US5130225A (en) * 1990-05-24 1992-07-14 Sumitomo Chemical Co. Ltd. Positive resist composition comprising a cyclic dimer of isopropenyl phenol, also known as a 1,1,3 trimethyl-3-hydroxyphenyl indane

Also Published As

Publication number Publication date
MX9206155A (es) 1993-05-01
KR930010615A (ko) 1993-06-22
JPH05127374A (ja) 1993-05-25
EP0539778B1 (en) 1998-08-12
DE69226600D1 (de) 1998-09-17
KR100192769B1 (ko) 1999-06-15
EP0539778A1 (en) 1993-05-05
TW269019B (enExample) 1996-01-21
CA2078830A1 (en) 1993-05-02
DE69226600T2 (de) 1999-02-04
US5275910A (en) 1994-01-04

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