KR100192769B1 - 포지티브형 감방사선 레지스트 조성물 - Google Patents

포지티브형 감방사선 레지스트 조성물 Download PDF

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Publication number
KR100192769B1
KR100192769B1 KR1019920019477A KR920019477A KR100192769B1 KR 100192769 B1 KR100192769 B1 KR 100192769B1 KR 1019920019477 A KR1019920019477 A KR 1019920019477A KR 920019477 A KR920019477 A KR 920019477A KR 100192769 B1 KR100192769 B1 KR 100192769B1
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KR
South Korea
Prior art keywords
resist composition
sensitive resist
radiation
positive
radiation sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019920019477A
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English (en)
Korean (ko)
Other versions
KR930010615A (ko
Inventor
히로시 모리우마
히로또시 나까니시
야스노리 우에따니
Original Assignee
고사이 아끼오
스미또모 가가꾸 고교 가부시끼가이샤
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Publication of KR930010615A publication Critical patent/KR930010615A/ko
Application granted granted Critical
Publication of KR100192769B1 publication Critical patent/KR100192769B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
KR1019920019477A 1991-11-01 1992-10-22 포지티브형 감방사선 레지스트 조성물 Expired - Lifetime KR100192769B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3287648A JP3039048B2 (ja) 1991-11-01 1991-11-01 ポジ型感放射線性レジスト組成物
JP91-287648 1991-11-01

Publications (2)

Publication Number Publication Date
KR930010615A KR930010615A (ko) 1993-06-22
KR100192769B1 true KR100192769B1 (ko) 1999-06-15

Family

ID=17719932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920019477A Expired - Lifetime KR100192769B1 (ko) 1991-11-01 1992-10-22 포지티브형 감방사선 레지스트 조성물

Country Status (8)

Country Link
US (1) US5275910A (enExample)
EP (1) EP0539778B1 (enExample)
JP (1) JP3039048B2 (enExample)
KR (1) KR100192769B1 (enExample)
CA (1) CA2078830A1 (enExample)
DE (1) DE69226600T2 (enExample)
MX (1) MX9206155A (enExample)
TW (1) TW269019B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064069B1 (ko) 2003-10-03 2011-09-08 신에쓰 가가꾸 고교 가부시끼가이샤 포토레지스트 하층막 형성 재료 및 패턴 형성 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996022563A1 (en) * 1995-01-17 1996-07-25 Nippon Zeon Co., Ltd. Positive resist composition
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
JP3433017B2 (ja) * 1995-08-31 2003-08-04 株式会社東芝 感光性組成物
JPH1124271A (ja) * 1997-06-30 1999-01-29 Kurarianto Japan Kk 高耐熱性放射線感応性レジスト組成物
JP4057704B2 (ja) * 1998-07-10 2008-03-05 本州化学工業株式会社 ９，９−ビス（アルキル置換−４−ヒドロキシフェニル）フルオレン類とその製造方法
JP4429620B2 (ja) * 2002-10-15 2010-03-10 出光興産株式会社 感放射線性有機化合物
EP2381308B1 (en) * 2003-06-23 2015-07-29 Sumitomo Bakelite Co., Ltd. Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
WO2005029189A1 (ja) * 2003-09-18 2005-03-31 Mitsubishi Gas Chemical Company, Inc. レジスト用化合物および感放射線性組成物
JP4575680B2 (ja) * 2004-02-23 2010-11-04 大阪瓦斯株式会社 新規フルオレン化合物
WO2005097725A1 (ja) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物
JP4678195B2 (ja) * 2005-02-03 2011-04-27 三菱瓦斯化学株式会社 フェナントレンキノン誘導体及びその製造方法
DE102008017591A1 (de) * 2008-04-07 2009-10-08 Merck Patent Gmbh Neue Materialien für organische Elektrolumineszenzvorrichtungen
KR100913058B1 (ko) * 2008-08-25 2009-08-20 금호석유화학 주식회사 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자
WO2016148176A1 (ja) * 2015-03-19 2016-09-22 東レ株式会社 ポジ型感光性樹脂組成物、硬化膜、ｔｆｔ基板、層間絶縁膜、表示装置、およびその製造方法
CN112745201A (zh) * 2020-12-25 2021-05-04 长春长光宇航复合材料有限公司 含芴环结构生物基双酚单体、生物基环氧树脂单体、生物基环氧树脂材料及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
AT393502B (de) * 1989-04-17 1991-11-11 Isovolta Verfahren zur synthese von 9,9-bis(4-hydroxyphenyl)fluoren
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
JPH087435B2 (ja) * 1989-12-28 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
JP2629403B2 (ja) * 1990-04-28 1997-07-09 東レ株式会社 ポジ型フォトレジスト組成物
JPH0413146A (ja) * 1990-05-02 1992-01-17 Sumitomo Chem Co Ltd 新規レジスト組成物
US5130225A (en) * 1990-05-24 1992-07-14 Sumitomo Chemical Co. Ltd. Positive resist composition comprising a cyclic dimer of isopropenyl phenol, also known as a 1,1,3 trimethyl-3-hydroxyphenyl indane

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064069B1 (ko) 2003-10-03 2011-09-08 신에쓰 가가꾸 고교 가부시끼가이샤 포토레지스트 하층막 형성 재료 및 패턴 형성 방법

Also Published As

Publication number Publication date
MX9206155A (es) 1993-05-01
KR930010615A (ko) 1993-06-22
JPH05127374A (ja) 1993-05-25
EP0539778B1 (en) 1998-08-12
DE69226600D1 (de) 1998-09-17
EP0539778A1 (en) 1993-05-05
JP3039048B2 (ja) 2000-05-08
TW269019B (enExample) 1996-01-21
CA2078830A1 (en) 1993-05-02
DE69226600T2 (de) 1999-02-04
US5275910A (en) 1994-01-04

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