JP2024506456A5 - - Google Patents

Info

Publication number
JP2024506456A5
JP2024506456A5 JP2023540552A JP2023540552A JP2024506456A5 JP 2024506456 A5 JP2024506456 A5 JP 2024506456A5 JP 2023540552 A JP2023540552 A JP 2023540552A JP 2023540552 A JP2023540552 A JP 2023540552A JP 2024506456 A5 JP2024506456 A5 JP 2024506456A5
Authority
JP
Japan
Prior art keywords
process gas
substrate
layer
method described
removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023540552A
Other languages
English (en)
Japanese (ja)
Other versions
JP7739434B2 (ja
JP2024506456A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/062793 external-priority patent/WO2022169509A1/en
Publication of JP2024506456A publication Critical patent/JP2024506456A/ja
Publication of JP2024506456A5 publication Critical patent/JP2024506456A5/ja
Application granted granted Critical
Publication of JP7739434B2 publication Critical patent/JP7739434B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023540552A 2021-02-03 2021-12-10 原子層エッチングにおけるエッチング選択性の制御 Active JP7739434B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163199932P 2021-02-03 2021-02-03
US63/199,932 2021-02-03
PCT/US2021/062793 WO2022169509A1 (en) 2021-02-03 2021-12-10 Etch selectivity control in atomic layer etching

Publications (3)

Publication Number Publication Date
JP2024506456A JP2024506456A (ja) 2024-02-14
JP2024506456A5 true JP2024506456A5 (https=) 2024-12-18
JP7739434B2 JP7739434B2 (ja) 2025-09-16

Family

ID=82703556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540552A Active JP7739434B2 (ja) 2021-02-03 2021-12-10 原子層エッチングにおけるエッチング選択性の制御

Country Status (4)

Country Link
US (2) US12280091B2 (https=)
JP (1) JP7739434B2 (https=)
KR (1) KR20230136016A (https=)
WO (1) WO2022169509A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102396275B1 (ko) * 2020-06-05 2022-05-09 성균관대학교산학협력단 반도체 발광소자 및 이의 제조 방법
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
KR20240012213A (ko) * 2022-07-20 2024-01-29 삼성전자주식회사 원자층 식각 장치 및 그 장치를 기반한 원자층 식각 방법
US20240124776A1 (en) * 2022-10-14 2024-04-18 Laurence E. Spurgeon High performance semiconductor grade dimethylaluminum chloride
KR102775721B1 (ko) * 2024-02-15 2025-03-05 오스 주식회사 원자층 식각을 위한 기판 처리 장치
WO2025244987A1 (en) * 2024-05-21 2025-11-27 Lam Research Corporation Cryogenic etch using acid forming gas

Family Cites Families (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119941B (fi) 1999-10-15 2009-05-15 Asm Int Menetelmä nanolaminaattien valmistamiseksi
US4313782A (en) 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4414069A (en) 1982-06-30 1983-11-08 International Business Machines Corporation Negative ion beam selective etching process
US4695327A (en) 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
FR2617333B1 (fr) 1987-06-25 1990-01-05 Straboni Alain Procede d'elimination de zones de nitrure ou d'oxynitrure de silicium
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JPH069195B2 (ja) 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JPH03263827A (ja) 1990-03-14 1991-11-25 Yasuhiro Horiike デジタルエツチング装置
JPH06295889A (ja) 1990-12-13 1994-10-21 Nec Corp 微細パターン形成方法
JPH04223329A (ja) 1990-12-25 1992-08-13 Nec Corp 微細パタ−ン形成方法および形成装置
US5431772A (en) 1991-05-09 1995-07-11 International Business Machines Corporation Selective silicon nitride plasma etching process
US5271800A (en) 1991-07-12 1993-12-21 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for anisotropic etching in the manufacture of semiconductor devices
JPH0529266A (ja) 1991-07-17 1993-02-05 Nec Corp 電子ビーム励起ドライエツチング方法および装置
US5268069A (en) 1991-10-28 1993-12-07 International Business Machines Corporation Safe method for etching silicon dioxide
JPH05190517A (ja) 1992-01-17 1993-07-30 Nec Corp 微細パターン形成方法
US5234540A (en) 1992-04-30 1993-08-10 Submicron Systems, Inc. Process for etching oxide films in a sealed photochemical reactor
JP3005373B2 (ja) 1992-10-23 2000-01-31 東京エレクトロン株式会社 処理装置
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH06326060A (ja) 1993-05-12 1994-11-25 Hitachi Ltd 固体表面加工方法
US5922624A (en) 1993-05-13 1999-07-13 Imec Vzw Method for semiconductor processing using mixtures of HF and carboxylic acid
US5482802A (en) 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
JP3328416B2 (ja) 1994-03-18 2002-09-24 富士通株式会社 半導体装置の製造方法と製造装置
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US5636320A (en) 1995-05-26 1997-06-03 International Business Machines Corporation Sealed chamber with heating lamps provided within transparent tubes
US5792275A (en) 1995-06-06 1998-08-11 International Business Machines Corporation Film removal by chemical transformation and aerosol clean
JP3331819B2 (ja) 1995-06-30 2002-10-07 ソニー株式会社 化合物半導体のプラズマエッチング方法
US5527425A (en) 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices
JPH0945670A (ja) 1995-07-29 1997-02-14 Hewlett Packard Co <Hp> Ｉｉｉ族−ｎ系結晶の気相エッチング方法および再成長方法
US5880032A (en) 1995-07-31 1999-03-09 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing a semiconductor device
JPH09102490A (ja) 1995-07-31 1997-04-15 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
US5789265A (en) 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
US5685951A (en) 1996-02-15 1997-11-11 Micron Technology, Inc. Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system
US5963833A (en) 1996-07-03 1999-10-05 Micron Technology, Inc. Method for cleaning semiconductor wafers and
US7052941B2 (en) 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JPH10154712A (ja) 1996-11-25 1998-06-09 Fujitsu Ltd 半導体装置の製造方法
US5766971A (en) 1996-12-13 1998-06-16 International Business Machines Corporation Oxide strip that improves planarity
US5913140A (en) 1996-12-23 1999-06-15 Lam Research Corporation Method for reduction of plasma charging damage during chemical vapor deposition
US6074951A (en) 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US5876879A (en) 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5858830A (en) 1997-06-12 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making dual isolation regions for logic and embedded memory devices
US5968279A (en) 1997-06-13 1999-10-19 Mattson Technology, Inc. Method of cleaning wafer substrates
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
JP3283477B2 (ja) 1997-10-27 2002-05-20 松下電器産業株式会社 ドライエッチング方法および半導体装置の製造方法
US6107192A (en) 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6146970A (en) 1998-05-26 2000-11-14 Motorola Inc. Capped shallow trench isolation and method of formation
US6204198B1 (en) 1998-11-24 2001-03-20 Texas Instruments Incorporated Rapid thermal annealing of doped polycrystalline silicon structures formed in a single-wafer cluster tool
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
SE9903213D0 (sv) 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US8206568B2 (en) 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6265302B1 (en) 1999-07-12 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Partially recessed shallow trench isolation method for fabricating borderless contacts
US6346489B1 (en) 1999-09-02 2002-02-12 Applied Materials, Inc. Precleaning process for metal plug that minimizes damage to low-κ dielectric
US20010016226A1 (en) 1999-12-15 2001-08-23 International Business Machines Corporation Method for preparing the surface of a dielectric
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6483154B1 (en) 2000-10-05 2002-11-19 Advanced Micro Devices, Inc. Nitrogen oxide plasma treatment for reduced nickel silicide bridging
US6573181B1 (en) 2000-10-26 2003-06-03 Applied Materials, Inc. Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step
US6926843B2 (en) 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US20030015704A1 (en) 2001-07-23 2003-01-23 Motorola, Inc. Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including intermediate surface cleaning
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7513971B2 (en) 2002-03-18 2009-04-07 Applied Materials, Inc. Flat style coil for improved precision etch uniformity
TWI278532B (en) 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6803309B2 (en) 2002-07-03 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance
US6817776B2 (en) 2002-11-19 2004-11-16 International Business Machines Corporation Method of bonding optical fibers and optical fiber assembly
US6774000B2 (en) 2002-11-20 2004-08-10 International Business Machines Corporation Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures
US6858532B2 (en) 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US6992011B2 (en) 2003-01-15 2006-01-31 Tokyo Electron Limited Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma
JP4550801B2 (ja) 2003-01-16 2010-09-22 エフ・イ−・アイ・カンパニー マスクを修復するための電子ビーム処理
WO2004073850A1 (en) 2003-02-14 2004-09-02 Tokyo Electron Limited Gas feeding apparatus
US7079760B2 (en) 2003-03-17 2006-07-18 Tokyo Electron Limited Processing system and method for thermally treating a substrate
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US7214274B2 (en) 2003-03-17 2007-05-08 Tokyo Electron Limited Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
US6790733B1 (en) 2003-03-28 2004-09-14 International Business Machines Corporation Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacer
KR100498494B1 (ko) 2003-04-08 2005-07-01 삼성전자주식회사 회전 이동 방식의 원격 플라즈마 강화 세정 장치
US6882025B2 (en) 2003-04-25 2005-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Strained-channel transistor and methods of manufacture
US6693050B1 (en) 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US6716691B1 (en) 2003-06-25 2004-04-06 Sharp Laboratories Of America, Inc. Self-aligned shallow trench isolation process having improved polysilicon gate thickness control
KR100512939B1 (ko) 2003-07-10 2005-09-07 삼성전자주식회사 트렌치 소자분리 방법
KR100606532B1 (ko) 2003-08-02 2006-07-31 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
KR100583637B1 (ko) 2003-08-19 2006-05-26 삼성전자주식회사 반도체 소자의 텅스텐 콘택 형성 방법 및 텅스텐 콘택형성 장비
US20050070120A1 (en) 2003-08-28 2005-03-31 International Sematech Methods and devices for an insulated dielectric interface between high-k material and silicon
US6967167B2 (en) 2003-09-30 2005-11-22 International Business Machines Corporation Silicon dioxide removing method
US7205233B2 (en) 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20050218113A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for adjusting a chemical oxide removal process using partial pressure
JP2005166700A (ja) 2003-11-28 2005-06-23 Toshiba Corp 半導体装置及びその製造方法
US6949481B1 (en) 2003-12-09 2005-09-27 Fasl, Llc Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
US7098116B2 (en) 2004-01-08 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation method for reducing oxide thickness variations at different pattern densities
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
KR20050110751A (ko) 2004-05-19 2005-11-23 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR100599437B1 (ko) 2004-06-30 2006-07-12 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US8288828B2 (en) 2004-09-09 2012-10-16 International Business Machines Corporation Via contact structure having dual silicide layers
US8084400B2 (en) 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US20060102197A1 (en) 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
WO2008088300A2 (en) 2005-03-08 2008-07-24 Primaxx, Inc. Selective etching of oxides from substrates
JP2006261451A (ja) 2005-03-17 2006-09-28 Sony Corp エッチング方法
US20100062602A1 (en) 2005-04-28 2010-03-11 Phyzchemix Corporation Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment
US8404594B2 (en) 2005-05-27 2013-03-26 Freescale Semiconductor, Inc. Reverse ALD
US20070087581A1 (en) 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
KR100746223B1 (ko) 2005-09-09 2007-08-03 삼성전자주식회사 반도체소자의 트렌치 소자분리 방법
US20070063277A1 (en) 2005-09-22 2007-03-22 International Business Machines Corporation Multiple low and high k gate oxides on single gate for lower miller capacitance and improved drive current
US7435661B2 (en) 2006-01-27 2008-10-14 Atmel Corporation Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation
US9230818B2 (en) 2006-02-02 2016-01-05 Trustees Of Boston University Planarization of GaN by photoresist technique using an inductively coupled plasma
US8257987B2 (en) 2006-02-02 2012-09-04 Trustees Of Boston University Planarization of GaN by photoresist technique using an inductively coupled plasma
JP2007258266A (ja) 2006-03-20 2007-10-04 Fujitsu Ltd 半導体装置の製造方法
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
CN101517713B (zh) 2006-09-19 2011-02-09 东京毅力科创株式会社 等离子体清洁方法和等离子体cvd方法
JP2008210909A (ja) 2007-02-26 2008-09-11 Toshiba Corp 半導体装置の製造方法
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
KR100905993B1 (ko) 2007-09-13 2009-07-02 인하대학교 산학협력단 인듐옥사이드-징크옥사이드의 건식 식각 방법
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US20090181553A1 (en) 2008-01-11 2009-07-16 Blake Koelmel Apparatus and method of aligning and positioning a cold substrate on a hot surface
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
KR100925210B1 (ko) 2008-05-27 2009-11-06 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터의 제조방법
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US7981763B1 (en) 2008-08-15 2011-07-19 Novellus Systems, Inc. Atomic layer removal for high aspect ratio gapfill
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
JP4305574B1 (ja) 2009-01-14 2009-07-29 住友電気工業株式会社 Ｉｉｉ族窒化物基板、それを備える半導体デバイス、及び、表面処理されたｉｉｉ族窒化物基板を製造する方法
US8404561B2 (en) 2009-05-18 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating an isolation structure
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8664070B2 (en) 2009-12-21 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. High temperature gate replacement process
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
JP4982582B2 (ja) 2010-03-31 2012-07-25 株式会社東芝 マスクの製造方法
WO2012050888A2 (en) 2010-09-28 2012-04-19 North Carolina State University Gallium nitride based structures with embedded voids and methods for their fabrication
US8124505B1 (en) 2010-10-21 2012-02-28 Hrl Laboratories, Llc Two stage plasma etching method for enhancement mode GaN HFET
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
KR101380835B1 (ko) 2011-07-22 2014-04-04 성균관대학교산학협력단 그래핀의 원자층 식각 방법
US20130099277A1 (en) 2011-10-25 2013-04-25 The Regents Of The University Of California SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
CN103117216B (zh) 2011-11-17 2015-08-05 中芯国际集成电路制造(上海)有限公司 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US20130313561A1 (en) 2012-05-25 2013-11-28 Triquint Semiconductor, Inc. Group iii-nitride transistor with charge-inducing layer
JP5918108B2 (ja) 2012-11-16 2016-05-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9570600B2 (en) 2012-11-16 2017-02-14 Massachusetts Institute Of Technology Semiconductor structure and recess formation etch technique
FR3000600B1 (fr) 2012-12-28 2018-04-20 Commissariat Energie Atomique Procede microelectronique de gravure d'une couche
US20140335666A1 (en) 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
JP6347695B2 (ja) 2013-11-20 2018-06-27 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
FR3017241B1 (fr) 2014-01-31 2017-08-25 Commissariat Energie Atomique Procede de gravure plasma
JP6230954B2 (ja) 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
JP6159757B2 (ja) 2014-07-10 2017-07-05 東京エレクトロン株式会社 基板の高精度エッチングのプラズマ処理方法
US9520294B2 (en) 2014-08-29 2016-12-13 Applied Materials, Inc. Atomic layer etch process using an electron beam
WO2016100873A1 (en) 2014-12-18 2016-06-23 The Regents Of The University Of Colorado, A Body Corporate Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
KR102510737B1 (ko) 2015-03-30 2023-03-15 도쿄엘렉트론가부시키가이샤 원자층 에칭 방법
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
KR102399578B1 (ko) 2015-06-05 2022-05-17 램 리써치 코포레이션 GaN 및 다른 III-V 족 재료들의 원자층 에칭
US9922839B2 (en) 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
US10290553B2 (en) 2015-06-24 2019-05-14 Tokyo Electron Limited System and method of determining process completion of post heat treatment of a dry etch process
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10727073B2 (en) * 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
TWI658512B (zh) 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
US10256108B2 (en) 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
WO2017205658A1 (en) 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching on microdevices and nanodevices
US20170345665A1 (en) 2016-05-26 2017-11-30 Tokyo Electron Limited Atomic layer etching systems and methods
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US10424487B2 (en) * 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US20190131130A1 (en) 2017-10-31 2019-05-02 Lam Research Corporation Etching metal oxide substrates using ale and selective deposition
JP6936700B2 (ja) 2017-10-31 2021-09-22 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7461923B2 (ja) 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング
US10720334B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
TWI809158B (zh) 2018-07-26 2023-07-21 日商東京威力科創股份有限公司 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法
US11935758B2 (en) * 2019-04-29 2024-03-19 Lam Research Corporation Atomic layer etching for subtractive metal etch
WO2021158482A1 (en) 2020-02-03 2021-08-12 Tokyo Electron Limited Method for using ultra-thin etch stop layers in selective atomic layer etching

Similar Documents

Publication Publication Date Title
JP2024506456A5 (https=)
TWI756350B (zh) 藉由熱ald及peald沉積氧化物膜之方法
CN108728824B (zh) 使用斜降流量的反应气体进行等离子体辅助循环沉积的方法
JP4090347B2 (ja) 半導体装置の製造方法及び基板処理装置
JP7227122B2 (ja) 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP5287964B2 (ja) 成膜方法及び成膜装置
US11476113B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP5202372B2 (ja) 成膜装置のメタル汚染低減方法、半導体装置の製造方法、記憶媒体及び成膜装置
US11417518B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
TWI641718B (zh) MOCVD layer growth method including subsequent multi-stage purification steps
US20130115778A1 (en) Dry Etch Processes
TW201323647A (zh) 利用包含鉿或鋯之前驅物之膜的原子層沉積
JP2015061075A (ja) プラズマアシストプロセスにより酸化膜を生成する方法
JP2018506186A (ja) 酸化ケイ素薄膜の選択的横成長
JP7365898B2 (ja) 成膜方法及び成膜装置
US11462414B2 (en) Atomic layer etching of metal oxides
JP4621241B2 (ja) 半導体装置の製造方法及び基板処理装置
JP2017022276A (ja) 半導体装置の製造方法、基板処理装置およびプログラム
JPH1140525A (ja) 珪素系半導体基板の清浄化方法
US20240038530A1 (en) Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN119096004A (zh) 使用原子层沉积法的薄膜的区域选择性沉积方法以及选择性形成薄膜的基板
JP6017361B2 (ja) 成膜方法および成膜装置
TW201308633A (zh) 保護鈍化層之方法及結構
KR20220063927A (ko) 기판 처리 방법
KR102955798B1 (ko) 기판의 표면 상에 패터닝된 특징부를 형성하기 위한 방법 및 시스템