JP7739434B2 - 原子層エッチングにおけるエッチング選択性の制御 - Google Patents

原子層エッチングにおけるエッチング選択性の制御

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Publication number
JP7739434B2
JP7739434B2 JP2023540552A JP2023540552A JP7739434B2 JP 7739434 B2 JP7739434 B2 JP 7739434B2 JP 2023540552 A JP2023540552 A JP 2023540552A JP 2023540552 A JP2023540552 A JP 2023540552A JP 7739434 B2 JP7739434 B2 JP 7739434B2
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Prior art keywords
substrate
process gas
layer
flowing
over
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English (en)
Japanese (ja)
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JP2024506456A (ja
JP2024506456A5 (https=
Inventor
フィッシャー・アンドレアス
リル・トールステン・ベルンド
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Lam Research Corp
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Lam Research Corp
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Publication of JP2024506456A5 publication Critical patent/JP2024506456A5/ja
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Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K38/00—Medicinal preparations containing peptides
    • A61K38/16—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • A61K38/55—Protease inhibitors
    • A61K38/57—Protease inhibitors from animals; from humans
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K38/00—Medicinal preparations containing peptides
    • A61K38/16—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • A61K38/17—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans
    • A61K38/1703—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates
    • A61K38/1709—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates from mammals
    • A61K38/1716—Amyloid plaque core protein
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Animal Behavior & Ethology (AREA)
  • Veterinary Medicine (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Immunology (AREA)
  • Medicinal Chemistry (AREA)
  • Pharmacology & Pharmacy (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Epidemiology (AREA)
  • Zoology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Marine Sciences & Fisheries (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2023540552A 2021-02-03 2021-12-10 原子層エッチングにおけるエッチング選択性の制御 Active JP7739434B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163199932P 2021-02-03 2021-02-03
US63/199,932 2021-02-03
PCT/US2021/062793 WO2022169509A1 (en) 2021-02-03 2021-12-10 Etch selectivity control in atomic layer etching

Publications (3)

Publication Number Publication Date
JP2024506456A JP2024506456A (ja) 2024-02-14
JP2024506456A5 JP2024506456A5 (https=) 2024-12-18
JP7739434B2 true JP7739434B2 (ja) 2025-09-16

Family

ID=82703556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540552A Active JP7739434B2 (ja) 2021-02-03 2021-12-10 原子層エッチングにおけるエッチング選択性の制御

Country Status (4)

Country Link
US (2) US12280091B2 (https=)
JP (1) JP7739434B2 (https=)
KR (1) KR20230136016A (https=)
WO (1) WO2022169509A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102396275B1 (ko) * 2020-06-05 2022-05-09 성균관대학교산학협력단 반도체 발광소자 및 이의 제조 방법
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
KR20240012213A (ko) * 2022-07-20 2024-01-29 삼성전자주식회사 원자층 식각 장치 및 그 장치를 기반한 원자층 식각 방법
US20240124776A1 (en) * 2022-10-14 2024-04-18 Laurence E. Spurgeon High performance semiconductor grade dimethylaluminum chloride
KR102775721B1 (ko) * 2024-02-15 2025-03-05 오스 주식회사 원자층 식각을 위한 기판 처리 장치
WO2025244987A1 (en) * 2024-05-21 2025-11-27 Lam Research Corporation Cryogenic etch using acid forming gas

Citations (4)

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JP2017157836A (ja) 2016-03-01 2017-09-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマおよび蒸気処理の組み合わせを用いたａｌ２ｏ３の原子層エッチング
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP2020508579A (ja) 2017-02-27 2020-03-19 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 原子層エッチングにおける方向性の制御
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