JP4550801B2 - マスクを修復するための電子ビーム処理 - Google Patents
マスクを修復するための電子ビーム処理 Download PDFInfo
- Publication number
- JP4550801B2 JP4550801B2 JP2006501020A JP2006501020A JP4550801B2 JP 4550801 B2 JP4550801 B2 JP 4550801B2 JP 2006501020 A JP2006501020 A JP 2006501020A JP 2006501020 A JP2006501020 A JP 2006501020A JP 4550801 B2 JP4550801 B2 JP 4550801B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- gallium
- quartz material
- transmittance
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 47
- 230000008439 repair process Effects 0.000 title description 19
- 238000012545 processing Methods 0.000 title description 5
- 239000010453 quartz Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 230000005540 biological transmission Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 44
- 238000002834 transmittance Methods 0.000 claims description 44
- 229910052733 gallium Inorganic materials 0.000 claims description 40
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 31
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 41
- 230000008569 process Effects 0.000 description 28
- 238000010884 ion-beam technique Methods 0.000 description 27
- 230000005855 radiation Effects 0.000 description 18
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 13
- 230000007547 defect Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000002120 nanofilm Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- -1 gallium ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Description
帯電粒子ビーム・プロセスは、適用される照射量、すなわち、単位面積に入射する電子またはイオンの総数によって特徴付けることができる。帯電粒子ビームは、ビーム・エネルギーと呼ばれる、ビームの粒子のエネルギーによっても特徴付けられる。照射量は、通常、平方ミクロンあたりのナノクーロン(nC/μm2)で測定され、ビーム・エネルギーは、通常、電子ボルト(eV)で測定される。通常、マスク欠陥の修復に使用されるガリウム・イオン・ビームのパラメータは、30keVの入射ビーム・エネルギーにおいてクロムを除去するための0.3nC/μm2の照射量、10〜20nmの画素間隔および等価なスポット・サイズ、6000μsの有効な気体リフレッシュ時間、および約0.2μsのドエル(dwell)である。
Claims (7)
- 石英材料の透過を低減する埋込みガリウムを有する石英材料の透過率を回復する方法であって、
キセノンジフルオリドの気体を前記石英材料のガリウム埋込み部分に向けることと、
電子ビームを前記石英材料の前記ガリウム埋込み部分に向け、前記電子ビームの電子照射量が、前記石英材料の厚さの変化が10nm未満であり、かつ前記石英材料の前記透過率が、埋込みガリウムのない前記石英材料の透過率に対して80%を超えて向上するようなものであることとを備える、方法。 - 電子ビームを前記石英材料の一部に向けることが、透過率が、埋込みガリウムのない前記石英材料の透過率の90%を超えて向上するように、電子ビームを前記石英材料の一部に向けることを含む、請求項1に記載の方法。
- 電子ビームを前記石英材料の一部に向けることが、前記石英材料の厚さが2nm未満だけ変化するように、電子ビームを前記石英材料の一部に向けることを含む、請求項1または2に記載の方法。
- 電子ビームを前記石英材料の一部に向けることが、前記石英材料の厚さが5nm未満だけ変化するように、電子ビームを前記石英材料の一部に向けることを含む、請求項1〜3のいずれかに記載の方法。
- 電子ビームを前記石英材料の一部に向けることが、2.0nC/μm2未満の電子照射量を提供することを含む、請求項1〜4のいずれかに記載の方法。
- 電子ビームを前記石英材料の一部に向けることが、約0.1nC/μm2と約1.0nC/μm2との間の電子照射量を提供することを含む、請求項1〜4のいずれかに記載の方法。
- 電子ビームを前記石英材料の一部に向けることが、約0.4nC/μm2と約0.8nC/μm2との間の電子照射量を提供することを含む、請求項1〜4のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44044203P | 2003-01-16 | 2003-01-16 | |
PCT/US2004/001268 WO2004066027A2 (en) | 2003-01-16 | 2004-01-16 | Electron beam processing for mask repair |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006515937A JP2006515937A (ja) | 2006-06-08 |
JP4550801B2 true JP4550801B2 (ja) | 2010-09-22 |
Family
ID=32771816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006501020A Expired - Fee Related JP4550801B2 (ja) | 2003-01-16 | 2004-01-16 | マスクを修復するための電子ビーム処理 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7727681B2 (ja) |
EP (1) | EP1586007B1 (ja) |
JP (1) | JP4550801B2 (ja) |
KR (1) | KR101159337B1 (ja) |
CN (1) | CN1739066B (ja) |
WO (1) | WO2004066027A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060199082A1 (en) * | 2005-03-01 | 2006-09-07 | International Business Machines Corporation | Mask repair |
JP5600371B2 (ja) | 2006-02-15 | 2014-10-01 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング |
DE102008037951B4 (de) * | 2008-08-14 | 2018-02-15 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten |
DE102008037943B4 (de) | 2008-08-14 | 2018-04-26 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens |
US8778804B2 (en) * | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
US8206691B2 (en) * | 2009-11-04 | 2012-06-26 | Conopco, Inc. | Sunscreen composition with fatty acid alkanolamides |
KR101068131B1 (ko) * | 2009-12-29 | 2011-09-28 | 한국화학연구원 | 광양극 양자점 감응형 태양전지 및 광양극 제조방법 |
US8999610B2 (en) * | 2012-12-31 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography mask repairing process |
US9123506B2 (en) * | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
KR102235616B1 (ko) | 2014-08-14 | 2021-04-02 | 삼성전자주식회사 | 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법 |
JP2017020106A (ja) | 2015-07-02 | 2017-01-26 | エフ・イ−・アイ・カンパニー | 高スループット・パターン形成のための適応ビーム電流 |
US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
DE102018207882A1 (de) * | 2018-05-18 | 2019-11-21 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells |
EP3821457A4 (en) * | 2018-07-09 | 2022-04-13 | Lam Research Corporation | ETCHING ATOMIC LAYER ETCHING USING ELECTRON EXCITATION |
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US4639301B2 (en) * | 1985-04-24 | 1999-05-04 | Micrion Corp | Focused ion beam processing |
US5035787A (en) * | 1987-07-22 | 1991-07-30 | Microbeam, Inc. | Method for repairing semiconductor masks and reticles |
JP2650930B2 (ja) * | 1987-11-24 | 1997-09-10 | 株式会社日立製作所 | 超格子構作の素子製作方法 |
US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
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JP3388421B2 (ja) * | 1996-11-26 | 2003-03-24 | 大日本印刷株式会社 | フォトマスクの残留欠陥修正方法 |
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JP4438618B2 (ja) * | 2004-12-08 | 2010-03-24 | エスアイアイ・ナノテクノロジー株式会社 | フォトマスクの黒欠陥修正方法 |
-
2004
- 2004-01-16 CN CN2004800022819A patent/CN1739066B/zh not_active Expired - Fee Related
- 2004-01-16 US US10/758,966 patent/US7727681B2/en not_active Expired - Fee Related
- 2004-01-16 KR KR1020057012088A patent/KR101159337B1/ko not_active IP Right Cessation
- 2004-01-16 EP EP04702994A patent/EP1586007B1/en not_active Expired - Lifetime
- 2004-01-16 WO PCT/US2004/001268 patent/WO2004066027A2/en active Application Filing
- 2004-01-16 JP JP2006501020A patent/JP4550801B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1739066B (zh) | 2010-06-02 |
CN1739066A (zh) | 2006-02-22 |
KR101159337B1 (ko) | 2012-06-22 |
US7727681B2 (en) | 2010-06-01 |
EP1586007B1 (en) | 2012-04-11 |
WO2004066027A3 (en) | 2005-06-30 |
JP2006515937A (ja) | 2006-06-08 |
EP1586007A4 (en) | 2009-06-10 |
KR20050094417A (ko) | 2005-09-27 |
US20040226814A1 (en) | 2004-11-18 |
WO2004066027A2 (en) | 2004-08-05 |
EP1586007A2 (en) | 2005-10-19 |
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