JP2023027033A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2023027033A5 JP2023027033A5 JP2022162821A JP2022162821A JP2023027033A5 JP 2023027033 A5 JP2023027033 A5 JP 2023027033A5 JP 2022162821 A JP2022162821 A JP 2022162821A JP 2022162821 A JP2022162821 A JP 2022162821A JP 2023027033 A5 JP2023027033 A5 JP 2023027033A5
- Authority
- JP
- Japan
- Prior art keywords
- surface treatment
- composition
- trimethylsilyl
- aprotic solvent
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 62
- 238000004381 surface treatment Methods 0.000 claims description 31
- 239000000010 aprotic solvent Substances 0.000 claims description 18
- -1 siloxanes Chemical class 0.000 claims description 17
- 239000012756 surface treatment agent Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 150000002596 lactones Chemical class 0.000 claims description 11
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 10
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- 235000013877 carbamide Nutrition 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 150000003951 lactams Chemical class 0.000 claims description 5
- 150000003672 ureas Chemical class 0.000 claims description 5
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical group CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 4
- JYOQNYLFMVKQHO-UHFFFAOYSA-N 1,1-bis(trimethylsilyl)urea Chemical compound C[Si](C)(C)N(C(N)=O)[Si](C)(C)C JYOQNYLFMVKQHO-UHFFFAOYSA-N 0.000 claims description 3
- KRUQDZRWZXUUAD-UHFFFAOYSA-N bis(trimethylsilyl) sulfate Chemical compound C[Si](C)(C)OS(=O)(=O)O[Si](C)(C)C KRUQDZRWZXUUAD-UHFFFAOYSA-N 0.000 claims description 3
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 claims description 3
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical group CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims description 3
- VMZOBROUFBEGAR-UHFFFAOYSA-N tris(trimethylsilyl) phosphite Chemical compound C[Si](C)(C)OP(O[Si](C)(C)C)O[Si](C)(C)C VMZOBROUFBEGAR-UHFFFAOYSA-N 0.000 claims description 3
- CVNCFZIIZGNVFD-UHFFFAOYSA-N n,n-bis(trimethylsilyl)prop-2-en-1-amine Chemical compound C[Si](C)(C)N([Si](C)(C)C)CC=C CVNCFZIIZGNVFD-UHFFFAOYSA-N 0.000 claims description 2
- FBADCSUQBLLAHW-UHFFFAOYSA-N 4-trimethylsilyloxypent-3-en-2-one Chemical compound CC(=O)C=C(C)O[Si](C)(C)C FBADCSUQBLLAHW-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- 239000002335 surface treatment layer Substances 0.000 description 5
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- ZSMNRKGGHXLZEC-UHFFFAOYSA-N n,n-bis(trimethylsilyl)methanamine Chemical compound C[Si](C)(C)N(C)[Si](C)(C)C ZSMNRKGGHXLZEC-UHFFFAOYSA-N 0.000 description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- FBADCSUQBLLAHW-SOFGYWHQSA-N (e)-4-trimethylsilyloxypent-3-en-2-one Chemical compound CC(=O)\C=C(/C)O[Si](C)(C)C FBADCSUQBLLAHW-SOFGYWHQSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- HIMXYMYMHUAZLW-UHFFFAOYSA-N [[[dimethyl(phenyl)silyl]amino]-dimethylsilyl]benzene Chemical compound C=1C=CC=CC=1[Si](C)(C)N[Si](C)(C)C1=CC=CC=C1 HIMXYMYMHUAZLW-UHFFFAOYSA-N 0.000 description 2
- YFONAHAKNVIHPT-UHFFFAOYSA-N [methyl-[[methyl(diphenyl)silyl]amino]-phenylsilyl]benzene Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C)N[Si](C)(C=1C=CC=CC=1)C1=CC=CC=C1 YFONAHAKNVIHPT-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- CWXWPIUMYLZIME-UHFFFAOYSA-N n-[dimethyl(2-phenylethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)CCC1=CC=CC=C1 CWXWPIUMYLZIME-UHFFFAOYSA-N 0.000 description 2
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical group CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024092571A JP2024103792A (ja) | 2017-03-24 | 2024-06-06 | 表面処理方法およびそのための組成物 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762476182P | 2017-03-24 | 2017-03-24 | |
| US62/476,182 | 2017-03-24 | ||
| US201862617688P | 2018-01-16 | 2018-01-16 | |
| US62/617,688 | 2018-01-16 | ||
| JP2019552589A JP7452782B2 (ja) | 2017-03-24 | 2018-03-22 | 表面処理方法およびそのための組成物 |
| PCT/US2018/023697 WO2018175682A1 (en) | 2017-03-24 | 2018-03-22 | Surface treatment methods and compositions therefor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019552589A Division JP7452782B2 (ja) | 2017-03-24 | 2018-03-22 | 表面処理方法およびそのための組成物 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024092571A Division JP2024103792A (ja) | 2017-03-24 | 2024-06-06 | 表面処理方法およびそのための組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023027033A JP2023027033A (ja) | 2023-03-01 |
| JP2023027033A5 true JP2023027033A5 (enExample) | 2023-12-18 |
| JP7502388B2 JP7502388B2 (ja) | 2024-06-18 |
Family
ID=63581154
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019552589A Active JP7452782B2 (ja) | 2017-03-24 | 2018-03-22 | 表面処理方法およびそのための組成物 |
| JP2022162821A Active JP7502388B2 (ja) | 2017-03-24 | 2022-10-07 | 表面処理方法およびそのための組成物 |
| JP2024092571A Pending JP2024103792A (ja) | 2017-03-24 | 2024-06-06 | 表面処理方法およびそのための組成物 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019552589A Active JP7452782B2 (ja) | 2017-03-24 | 2018-03-22 | 表面処理方法およびそのための組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024092571A Pending JP2024103792A (ja) | 2017-03-24 | 2024-06-06 | 表面処理方法およびそのための組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10593538B2 (enExample) |
| EP (1) | EP3602606B1 (enExample) |
| JP (3) | JP7452782B2 (enExample) |
| KR (1) | KR102519448B1 (enExample) |
| CN (2) | CN118344845A (enExample) |
| IL (1) | IL269490B (enExample) |
| SG (1) | SG11201908617QA (enExample) |
| TW (1) | TWI835725B (enExample) |
| WO (1) | WO2018175682A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941301B2 (en) * | 2017-12-28 | 2021-03-09 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment method, surface treatment agent, and method for forming film region-selectively on substrate |
| EP3735325A4 (en) | 2018-01-05 | 2021-03-03 | FUJIFILM Electronic Materials U.S.A, Inc. | SURFACE TREATMENT COMPOSITIONS AND PROCEDURES |
| KR102084164B1 (ko) * | 2018-03-06 | 2020-05-27 | 에스케이씨 주식회사 | 반도체 공정용 조성물 및 반도체 공정 |
| CN111886676B (zh) * | 2018-04-05 | 2024-09-27 | 中央硝子株式会社 | 晶圆的表面处理方法及用于该方法的组合物 |
| US20200035494A1 (en) * | 2018-07-30 | 2020-01-30 | Fujifilm Electronic Materials U.S.A., Inc. | Surface Treatment Compositions and Methods |
| SG11202105360UA (en) * | 2018-11-22 | 2021-06-29 | Central Glass Co Ltd | Bevel portion treatment agent composition and method of manufacturing wafer |
| JP2022546328A (ja) * | 2019-08-21 | 2022-11-04 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 表面処理組成物及び表面処理方法 |
| WO2021039274A1 (ja) * | 2019-08-27 | 2021-03-04 | 昭和電工株式会社 | 組成物、及び接着性ポリマーの洗浄方法 |
| JP7446097B2 (ja) * | 2019-12-06 | 2024-03-08 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| US20230282474A1 (en) * | 2020-05-21 | 2023-09-07 | Central Glass Company, Limited | Surface treatment method for semiconductor substrates and surface treatment agent composition |
| WO2021235476A1 (ja) | 2020-05-21 | 2021-11-25 | セントラル硝子株式会社 | 半導体基板の表面処理方法、及び表面処理剤組成物 |
| WO2023192000A1 (en) * | 2022-03-31 | 2023-10-05 | Fujifilm Electronic Materials U.S.A., Inc. | Surface treatment compositions and methods |
| TW202429525A (zh) * | 2022-09-14 | 2024-07-16 | 美商富士軟片電子材料美國股份有限公司 | 表面處理組成物及方法 |
| CN121153104A (zh) * | 2023-05-31 | 2025-12-16 | 中央硝子株式会社 | 膜形成用组合物、基板的制造方法及膜形成用组合物的制造方法 |
| TW202536146A (zh) * | 2023-11-13 | 2025-09-16 | 美商富士軟片電子材料美國股份有限公司 | 蝕刻方法 |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6032338B2 (ja) | 1977-03-16 | 1985-07-27 | 太陽誘電株式会社 | 導電性塗料焼付電極を有する磁器コンデンサ |
| JPS54107442A (en) | 1978-02-09 | 1979-08-23 | Nippon Boshoku Kogyo Kk | External source type* electrical corrosion preventive anode system for bottom portion of outdoor steel container |
| WO2002004233A1 (en) * | 2000-07-10 | 2002-01-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| TW200409669A (en) | 2002-04-10 | 2004-06-16 | Dow Corning Ireland Ltd | Protective coating composition |
| US7345000B2 (en) * | 2003-10-10 | 2008-03-18 | Tokyo Electron Limited | Method and system for treating a dielectric film |
| US7041226B2 (en) * | 2003-11-04 | 2006-05-09 | Lexmark International, Inc. | Methods for improving flow through fluidic channels |
| US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
| TWI538033B (zh) * | 2005-01-27 | 2016-06-11 | 安堤格里斯公司 | 半導體基板處理用之組成物 |
| US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| KR100840498B1 (ko) * | 2007-05-29 | 2008-06-23 | 주식회사 동부하이텍 | 반도체소자의 패턴 붕괴 방지 방법 |
| US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
| KR20160114736A (ko) | 2008-10-21 | 2016-10-05 | 도오꾜오까고오교 가부시끼가이샤 | 표면 처리액 및 표면 처리 방법, 그리고 소수화 처리 방법 및 소수화된 기판 |
| US9053924B2 (en) | 2008-12-26 | 2015-06-09 | Central Glass Company, Limited | Cleaning agent for silicon wafer |
| SG173043A1 (en) | 2009-01-21 | 2011-08-29 | Central Glass Co Ltd | Silicon wafer cleaning agent |
| JP5324361B2 (ja) | 2009-08-28 | 2013-10-23 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| JP5663160B2 (ja) | 2009-09-28 | 2015-02-04 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| US8222196B2 (en) * | 2009-11-12 | 2012-07-17 | Ecolab Usa Inc. | Composition and methods for removal of polymerized non-trans fats |
| JP5680932B2 (ja) | 2009-11-13 | 2015-03-04 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| JP5708191B2 (ja) | 2010-05-19 | 2015-04-30 | セントラル硝子株式会社 | 保護膜形成用薬液 |
| US9228120B2 (en) | 2010-06-07 | 2016-01-05 | Central Glass Company, Limited | Liquid chemical for forming protecting film |
| KR101363441B1 (ko) | 2010-06-07 | 2014-02-21 | 샌트랄 글래스 컴퍼니 리미티드 | 보호막 형성용 약액, 이의 조제 방법 및 이를 사용하는 세정 방법 |
| JP5716527B2 (ja) | 2010-06-28 | 2015-05-13 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法 |
| JP2012033880A (ja) | 2010-06-30 | 2012-02-16 | Central Glass Co Ltd | 撥水性保護膜形成用薬液 |
| JP2012015335A (ja) | 2010-06-30 | 2012-01-19 | Central Glass Co Ltd | 保護膜形成用薬液、および、ウェハ表面の洗浄方法 |
| WO2012027667A2 (en) | 2010-08-27 | 2012-03-01 | Advanced Technology Materials, Inc. | Method for preventing the collapse of high aspect ratio structures during drying |
| US8828144B2 (en) * | 2010-12-28 | 2014-09-09 | Central Grass Company, Limited | Process for cleaning wafers |
| US20120164818A1 (en) | 2010-12-28 | 2012-06-28 | Central Glass Company, Limited | Process for Cleaning Wafers |
| JP2013118347A (ja) * | 2010-12-28 | 2013-06-13 | Central Glass Co Ltd | ウェハの洗浄方法 |
| JP6213616B2 (ja) | 2011-10-28 | 2017-10-18 | セントラル硝子株式会社 | 保護膜形成用薬液の調製方法 |
| JP5953721B2 (ja) | 2011-10-28 | 2016-07-20 | セントラル硝子株式会社 | 保護膜形成用薬液の調製方法 |
| KR101680438B1 (ko) * | 2011-11-11 | 2016-11-28 | 샌트랄 글래스 컴퍼니 리미티드 | 웨이퍼의 표면 처리방법 및 표면 처리액, 질화규소 함유 웨이퍼용 표면 처리제, 표면 처리액 및 표면 처리방법 |
| JP2013104954A (ja) | 2011-11-11 | 2013-05-30 | Central Glass Co Ltd | ウェハの表面処理方法及び表面処理液 |
| JP5288147B2 (ja) | 2011-11-29 | 2013-09-11 | セントラル硝子株式会社 | 保護膜形成用薬液の調製方法 |
| JP5974514B2 (ja) | 2012-02-01 | 2016-08-23 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法 |
| JP5969253B2 (ja) | 2012-02-10 | 2016-08-17 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| JP2013168583A (ja) | 2012-02-16 | 2013-08-29 | Toagosei Co Ltd | 表面処理剤および表面処理方法 |
| CN103007911B (zh) * | 2012-12-01 | 2014-04-30 | 福州大学 | 一种表面处理剂用复合催化剂的制备方法 |
| KR102209867B1 (ko) * | 2012-12-14 | 2021-01-29 | 바스프 에스이 | 50 nm 이하의 선-공간 치수를 갖는 패턴화된 재료를 처리할 때 항 패턴 붕괴를 피하기 위한 계면활성제 및 소수성화제를 포함하는 조성물의 용도 |
| JP6221279B2 (ja) * | 2013-03-18 | 2017-11-01 | 富士通株式会社 | レジスト組成物の製造方法及びパターン形成方法 |
| JP6191372B2 (ja) | 2013-10-04 | 2017-09-06 | セントラル硝子株式会社 | ウェハの洗浄方法 |
| WO2015084921A1 (en) * | 2013-12-06 | 2015-06-11 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| CN103773236B (zh) * | 2014-01-17 | 2016-02-03 | 浙江大学 | 一种在基材表面制备防水防油型陶瓷涂料的方法 |
| WO2015175521A1 (en) | 2014-05-12 | 2015-11-19 | Tokyo Electron Limited | Method and system to improve drying of flexible nano-structures |
| JP6564312B2 (ja) | 2015-03-31 | 2019-08-21 | 東京応化工業株式会社 | 表面処理方法及び表面処理液 |
| US9703202B2 (en) * | 2015-03-31 | 2017-07-11 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment process and surface treatment liquid |
| US9976037B2 (en) * | 2015-04-01 | 2018-05-22 | Versum Materials Us, Llc | Composition for treating surface of substrate, method and device |
| JP6592303B2 (ja) * | 2015-08-14 | 2019-10-16 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板洗浄方法および基板洗浄装置 |
| JP6681796B2 (ja) | 2016-06-21 | 2020-04-15 | 東京応化工業株式会社 | シリル化剤溶液、表面処理方法、及び半導体デバイスの製造方法 |
| JP6310583B2 (ja) * | 2017-02-10 | 2018-04-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN108250916A (zh) * | 2017-12-29 | 2018-07-06 | 安徽鑫发铝业有限公司 | 一种汽车用铝型材表面处理工艺 |
| EP3735325A4 (en) | 2018-01-05 | 2021-03-03 | FUJIFILM Electronic Materials U.S.A, Inc. | SURFACE TREATMENT COMPOSITIONS AND PROCEDURES |
-
2018
- 2018-03-22 EP EP18772478.6A patent/EP3602606B1/en active Active
- 2018-03-22 US US15/928,152 patent/US10593538B2/en active Active
- 2018-03-22 KR KR1020197030566A patent/KR102519448B1/ko active Active
- 2018-03-22 CN CN202410395705.1A patent/CN118344845A/zh active Pending
- 2018-03-22 JP JP2019552589A patent/JP7452782B2/ja active Active
- 2018-03-22 SG SG11201908617Q patent/SG11201908617QA/en unknown
- 2018-03-22 WO PCT/US2018/023697 patent/WO2018175682A1/en not_active Ceased
- 2018-03-22 CN CN201880019856.XA patent/CN110462525B/zh active Active
- 2018-03-23 TW TW107110073A patent/TWI835725B/zh active
-
2019
- 2019-09-20 IL IL269490A patent/IL269490B/en unknown
-
2022
- 2022-10-07 JP JP2022162821A patent/JP7502388B2/ja active Active
-
2024
- 2024-06-06 JP JP2024092571A patent/JP2024103792A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2023027033A5 (enExample) | ||
| JP7282938B2 (ja) | 窒化ケイ素含有基板をエッチングするための組成物および方法 | |
| JP6643411B2 (ja) | 湿式剥離性シリコン含有反射防止剤 | |
| TWI704220B (zh) | 表面處理劑及表面處理方法 | |
| US7955782B2 (en) | Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same | |
| JP7452782B2 (ja) | 表面処理方法およびそのための組成物 | |
| EP2128897B1 (en) | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | |
| CN104081282B (zh) | 使用溶剂显影用形成含硅抗蚀剂下层膜的组合物的半导体装置的制造方法 | |
| JP6167588B2 (ja) | レジスト下層膜形成用組成物及びパターン形成方法 | |
| US7084505B2 (en) | Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device | |
| US9703202B2 (en) | Surface treatment process and surface treatment liquid | |
| JP2010032996A (ja) | シリカ系塗膜のパターニング方法および該方法から得られるシリカ系塗膜 | |
| JP2016170338A (ja) | レジスト下層膜形成用組成物及び該組成物を用いたパターン形成方法 | |
| KR20150139770A (ko) | 4급 암모늄염 화합물, 레지스트 하층막 형성용 조성물, 및 패턴 형성 방법 | |
| JP6564312B2 (ja) | 表面処理方法及び表面処理液 | |
| TW202128722A (zh) | 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 | |
| JP6916731B2 (ja) | 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法 | |
| JP2015052101A (ja) | 膜形成用材料 | |
| JP2013168583A (ja) | 表面処理剤および表面処理方法 | |
| KR101680438B1 (ko) | 웨이퍼의 표면 처리방법 및 표면 처리액, 질화규소 함유 웨이퍼용 표면 처리제, 표면 처리액 및 표면 처리방법 | |
| JP5761890B2 (ja) | シリカ系塗膜形成用塗布液の調製方法 | |
| KR20160022251A (ko) | 자외선흡수제, 레지스트 하층막 형성용 조성물, 및 패턴 형성방법 | |
| KR102037503B1 (ko) | 레지스트 하층막 형성용 조성물 및 패턴 형성 방법 | |
| WO2012002200A1 (ja) | ウェハの洗浄方法 | |
| US20150184047A1 (en) | Method for modifying substrate surface, modifying film and coating solution used for modification of substrate surface |