JP7282938B2 - 窒化ケイ素含有基板をエッチングするための組成物および方法 - Google Patents
窒化ケイ素含有基板をエッチングするための組成物および方法 Download PDFInfo
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- JP7282938B2 JP7282938B2 JP2022021110A JP2022021110A JP7282938B2 JP 7282938 B2 JP7282938 B2 JP 7282938B2 JP 2022021110 A JP2022021110 A JP 2022021110A JP 2022021110 A JP2022021110 A JP 2022021110A JP 7282938 B2 JP7282938 B2 JP 7282938B2
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
Si(R1)(R2)(R3)(R4)
式中、R1、R2、R3、およびR4のそれぞれは、アルキル基、アルコキシ基、ヒドロキシル基、アルキルアミン基、またはアルコキシアミン(アミノアルコキシ)基であり、R1、R2、R3、およびR4の少なくとも1つはアルキル、アルコキシ、またはヒドロキシル基であり、およびR1、R2、R3、およびR4の少なくとも1つは、アルキルアミン基またはアルコキシアミン基である。アルキル鎖を含むR1、R2、R3、またはR4基には、分岐したアルキルが含まれる場合があるが、直鎖基、および1、2、3、4、または5個の炭素原子を有するアルキル基などの低級アルキル基を含む鎖が好ましい場合がある。好ましいR1、R2、R3、およびR4基も非環状、飽和であり、エーテル連結を含まない。
式-(CH2)xNW2[式中、xが1~12の範囲である]または-(CH2)x1-NW-(CH2)x2-NW-...(CH2)xn-NW2[式中、WはHまたはCH3基に等しく、x1、x2、...xnは1~12(好ましくは2または3)の範囲であり、n≦100]を有するアルキルアミン基、
式-O-(CH2)xNW2[式中、xは1~12の範囲である]または-O-(CH2)x1-NW-(CH2)x2-NW-...(CH2)xn-NW2[式中、WはHまたはCH3基に等しく、x1、x2、...xnは1~12(好ましくは2または3)の範囲であり、n≦100]を有するアミノアルコキシ基、
式-O(CH2)yCH3[式中、yは1~6の範囲である]を有するアルコキシ基
ヒドロキシル基(シラノール、-OH)、または
式-(CH2)zCH3[式中、zは1~18の範囲である]を有するアルキル基
である。
1.実施例13と5との比較は、カルボン酸化合物の存在による性能の違いを示す。
2.実施例6および8は、溶液に追加の100ppmのSiO2を充填した場合に200ppmのアルキルアミンを装填することによるプラスの効果を示す。SiO2のこの装填は、エッチング組成物の成分として溶解シリカを添加することにより生じる可能性があり、またはSiN溶解により溶液に酸化物が追加されるため、長時間エッチング方法でエッチング組成物を使用する際に生じる場合がある。
3.実施例7および9は、シリカ装填がなく、アミン添加剤が存在する場合であっても、APTESを省略するマイナスの効果を示す。
4.実施例14は、実施例13と比較して、添加された界面活性剤のプラスの効果を示す。
5.列A、B、Cに記録された結果は、スリットパターンの30分間のエッチング(図1参照)からのものであり、80分間の新鮮な通常の(plain)85%H3PO4ランで実行されたランと比較される(AおよびB)。列Cは、通常のH3PO4を使用した30分間のランを本発明の組成物の30分間のランと比較した場合、SiNエッチング速度(スリットへの浸透の深さで表される)は典型的に約2倍大きいことを示す。(列Cの結果は計算で得られたもので、80分のエッチング深さを2.667で割ったものである。通常のH3PO4の30分間のラン結果は利用できなかった。)
6.列D、E、およびFは、ブランケット膜のエッチング速度およびそれぞれの選択性を示す。
7.列Aの「閉鎖」という用語を含む結果は、30分間のランでスリット開口部が閉じた配合物(列Bの「酸化物ギャップ」)の結果である。同じ実施例では、ブランケット膜でのマイナスの酸化物エッチング速度が示され、選択性(F)は適用不可である。これらのデータ(列Aの「閉鎖」結果)は、極端な性能要件に関連していると見なすことができ、関連する実施例の配合物(6、9、13、および15)は、他の基板、より小さなアスペクト比のパターンのエッチングに、または別のエッチング条件または撹拌の改善などの方法工程を使用する場合に、有効である可能性がある。
Claims (17)
- 酸化ケイ素に対してSiNをエッチングする選択性を有する、窒化ケイ素(SiN)及び酸化ケイ素を含む表面を有する基板のエッチングに使用するための組成物であって、該組成物は、
濃リン酸、
ヘキサフルオロケイ酸(HFSA)、及び
アミノアルコキシシラン
を含み、
アミノアルコキシシランが、
(3-アミノプロピル)トリエトキシシラン(APTES)、(3-アミノプロピル)トリメトキシシラン(APTMSAS)、(3-アミノプロピル)シラントリオール、[N-(6-アミノヘキシル)アミノプロピルトリメトキシシラン(AHAPTES)、又はそれらの組み合わせ
である、組成物。 - 5~50000パーツパーミリオン(ppm)ヘキサフルオロケイ酸(HFSA)、及び
20~10000ppmのアミノアルコキシシラン
を含む、請求項1に記載の組成物。 - カルボン酸化合物をさらに含む、請求項1に記載の組成物。
- カルボン酸が酢酸、グルタル酸、又はそれらの組み合わせである、請求項3に記載の組成物。
- 組成物の総重量に基づいて0.01~10重量%のカルボン酸化合物を含む、請求項3に記載の組成物。
- アルキルアミン化合物をさらに含む、請求項1に記載の組成物。
- アルキルアミン化合物が第一級アルキルアミンである、請求項6に記載の組成物。
- アルキルアミン化合物がオクチルアミン、デシルアミン、又はそれらの組み合わせである、請求項6に記載の組成物。
- 5~10000ppmのアルキルアミン化合物を含む、請求項6に記載の組成物。
- 溶解シリカ又は可溶性ケイ素含有化合物をさらに含む、請求項1に記載の組成物。
- 組成物の総重量に基づいて5~10000パーツパーミリオンの溶解シリカ又は可溶性ケイ素含有化合物を含む、請求項10に記載の組成物。
- すべての供給源からの水を含んで、50重量%以下の水をさらに含む、請求項1に記載の組成物。
- さらに有機溶媒を含む、請求項1に記載の組成物。
- 有機溶媒が、テトラエチレングリコールジメチルエーテル、スルホラン、又はそれらの組み合わせである、請求項13に記載の組成物。
- 組成物の総重量に基づいて1~20重量%の有機溶媒を含む、請求項13に記載の組成物。
- 界面活性剤をさらに含む、請求項1に記載の組成物。
- 酸化ケイ素に対するSiNのエッチングの選択性を有する、窒化ケイ素(SiN)及び酸化ケイ素を含む表面を有する基板をエッチングする方法であって、
濃リン酸、
ヘキサフルオロケイ酸(HSFA)、及び
アミノアルコキシシラン
を含むエッチング組成物を提供すること、
窒化ケイ素及び酸化ケイ素を含む表面を有する基板を提供すること、並びに
表面からSiNを除去する条件で基板を組成物と接触させること
を含み、
アミノアルコキシシランが、
(3-アミノプロピル)トリエトキシシラン(APTES)、(3-アミノプロピル)トリメトキシシラン(APTMSAS)、(3-アミノプロピル)シラントリオール、[N-(6-アミノヘキシル)アミノプロピルトリメトキシシラン(AHAPTES)、又はそれらの組み合わせ
である、方法。
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KR20190051656A (ko) * | 2017-11-07 | 2019-05-15 | 삼성전자주식회사 | 식각 조성물, 실리콘 질화막의 식각 방법, 및 반도체 소자의 제조 방법 |
CN112368835B (zh) * | 2018-07-20 | 2024-09-10 | 东京毅力科创株式会社 | 3d nand结构中氮化硅的蚀刻和二氧化硅的沉积控制 |
KR20200118368A (ko) * | 2019-04-03 | 2020-10-15 | 조이풀니스 어드밴스드 케미칼 컴퍼니 리미티드 | 에칭 잔류물 제거를 위한 세정 조성물 |
US11075218B2 (en) * | 2019-05-22 | 2021-07-27 | Sandisk Technologies Llc | Method of making a three-dimensional memory device using silicon nitride etching end point detection |
KR20210026307A (ko) * | 2019-08-29 | 2021-03-10 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR20210028447A (ko) | 2019-09-04 | 2021-03-12 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR20220079928A (ko) * | 2019-10-09 | 2022-06-14 | 엔테그리스, 아이엔씨. | 습식 에칭 조성물 및 방법 |
KR102520371B1 (ko) * | 2019-10-18 | 2023-04-10 | 삼성에스디아이 주식회사 | 실리콘 질화막 식각용 조성물 및 이를 이용한 실리콘 질화막 식각 방법 |
KR102675057B1 (ko) * | 2019-10-29 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
CN110846040A (zh) * | 2019-11-08 | 2020-02-28 | 湖北兴福电子材料有限公司 | 一种高容硅量磷酸基蚀刻液及其配制方法 |
US11024512B1 (en) | 2020-03-06 | 2021-06-01 | International Business Machines Corporation | Selective etch formulation for silicon oxide |
CN116134588A (zh) | 2020-07-30 | 2023-05-16 | 恩特格里斯公司 | 用于选择性蚀刻氮化硅膜的组合物和方法 |
CN111925805B (zh) * | 2020-08-14 | 2021-09-28 | 上海新阳半导体材料股份有限公司 | 一种蚀刻液组合物、其制备方法及应用 |
CN111849487B (zh) * | 2020-08-14 | 2021-09-28 | 上海新阳半导体材料股份有限公司 | 一种高选择比氮化硅蚀刻液、其制备方法及应用 |
KR102345842B1 (ko) * | 2020-09-21 | 2021-12-31 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
EP4337744A1 (en) * | 2021-05-12 | 2024-03-20 | Entegris, Inc. | Selective etchant compositions and methods |
KR20240012468A (ko) | 2021-05-26 | 2024-01-29 | 엔테그리스, 아이엔씨. | 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법 |
US20240279548A1 (en) * | 2021-06-14 | 2024-08-22 | Rasa Industries, Ltd. | Etching solution composition |
CN115894077B (zh) * | 2022-10-10 | 2023-07-25 | 湖北兴福电子材料股份有限公司 | 3d nand结构片的选择性蚀刻液 |
CN115873599B (zh) * | 2022-10-10 | 2024-05-17 | 湖北兴福电子材料股份有限公司 | 氮化硅/氧化硅的3d nand结构片的选择性蚀刻液 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007012640A (ja) | 2005-06-03 | 2007-01-18 | Tosoh Corp | エッチング用組成物 |
JP2010515245A (ja) | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化ケイ素の選択的除去のための組成物および方法 |
JP2012033561A (ja) | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
US20130092872A1 (en) | 2011-10-18 | 2013-04-18 | Soulbrain Co., Ltd. | Compositions for etching and methods of forming a semiconductor device using the same |
JP2014099480A (ja) | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
JP2016029717A (ja) | 2014-07-17 | 2016-03-03 | ソウルブレイン シーオー., エルティーディー. | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04257593A (ja) | 1991-02-08 | 1992-09-11 | Shin Etsu Chem Co Ltd | 有機けい素化合物 |
JP3467411B2 (ja) * | 1998-08-07 | 2003-11-17 | 松下電器産業株式会社 | エッチング液,その製造方法及びエッチング方法 |
US6162370A (en) | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
KR100706822B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전자주식회사 | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 |
AU2006318589A1 (en) | 2005-11-25 | 2007-05-31 | Vesta Research Ltd. | Process for producing a silicon nitride compound |
US8025811B2 (en) | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
KR101097277B1 (ko) * | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 습식 식각용 조성물 |
CN102443395B (zh) * | 2010-09-30 | 2016-01-20 | 韩国泰科诺赛美材料株式会社 | 用于湿法蚀刻二氧化硅的组合物 |
JP2012233243A (ja) * | 2011-05-09 | 2012-11-29 | Nippon Paint Co Ltd | 金属基材を表面処理するための化成処理剤及びそれを用いた金属基材の表面処理方法 |
US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
KR20160050536A (ko) * | 2014-10-30 | 2016-05-11 | 램테크놀러지 주식회사 | 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
KR101728951B1 (ko) * | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
KR20170009240A (ko) * | 2015-07-16 | 2017-01-25 | 동우 화인켐 주식회사 | 비불소계 실리콘 질화막 식각 조성물 |
KR102545801B1 (ko) * | 2015-12-04 | 2023-06-21 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007012640A (ja) | 2005-06-03 | 2007-01-18 | Tosoh Corp | エッチング用組成物 |
JP2010515245A (ja) | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 窒化ケイ素の選択的除去のための組成物および方法 |
JP2012033561A (ja) | 2010-07-28 | 2012-02-16 | Sanyo Chem Ind Ltd | 窒化ケイ素用エッチング液 |
US20130092872A1 (en) | 2011-10-18 | 2013-04-18 | Soulbrain Co., Ltd. | Compositions for etching and methods of forming a semiconductor device using the same |
JP2014099480A (ja) | 2012-11-13 | 2014-05-29 | Fujifilm Corp | 半導体基板のエッチング方法及び半導体素子の製造方法 |
JP2016029717A (ja) | 2014-07-17 | 2016-03-03 | ソウルブレイン シーオー., エルティーディー. | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
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CN111108176B (zh) | 2021-10-08 |
JP2022078087A (ja) | 2022-05-24 |
KR20220070055A (ko) | 2022-05-27 |
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KR102436721B1 (ko) | 2022-08-29 |
WO2019051053A1 (en) | 2019-03-14 |
US10651045B2 (en) | 2020-05-12 |
KR20200039801A (ko) | 2020-04-16 |
JP2020533786A (ja) | 2020-11-19 |
TWI684640B (zh) | 2020-02-11 |
TW201920615A (zh) | 2019-06-01 |
US20190074188A1 (en) | 2019-03-07 |
CN113817471B (zh) | 2022-11-15 |
CN113817471A (zh) | 2021-12-21 |
CN111108176A (zh) | 2020-05-05 |
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KR102399990B1 (ko) | 2022-05-23 |
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