TWI710629B - 用於自表面移除氧化鈰粒子之組成物及方法 - Google Patents
用於自表面移除氧化鈰粒子之組成物及方法 Download PDFInfo
- Publication number
- TWI710629B TWI710629B TW107101930A TW107101930A TWI710629B TW I710629 B TWI710629 B TW I710629B TW 107101930 A TW107101930 A TW 107101930A TW 107101930 A TW107101930 A TW 107101930A TW I710629 B TWI710629 B TW I710629B
- Authority
- TW
- Taiwan
- Prior art keywords
- ether
- glycol
- methyl
- pentanone
- heptanone
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 141
- 239000002245 particle Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 27
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 title abstract 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 title abstract 3
- 238000004377 microelectronic Methods 0.000 claims abstract description 51
- 239000000356 contaminant Substances 0.000 claims abstract description 42
- 238000005498 polishing Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- -1 DOWANOL PnB) Chemical compound 0.000 claims description 49
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 46
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- 239000003002 pH adjusting agent Substances 0.000 claims description 40
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 33
- 239000006259 organic additive Substances 0.000 claims description 33
- 239000003638 chemical reducing agent Substances 0.000 claims description 30
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- 239000008139 complexing agent Substances 0.000 claims description 24
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 20
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 20
- 229940123973 Oxygen scavenger Drugs 0.000 claims description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 11
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 claims description 9
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 claims description 9
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 8
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 claims description 8
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 claims description 8
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 8
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 8
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 8
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 claims description 8
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 claims description 8
- RHLVCLIPMVJYKS-UHFFFAOYSA-N 3-octanone Chemical compound CCCCCC(=O)CC RHLVCLIPMVJYKS-UHFFFAOYSA-N 0.000 claims description 8
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 claims description 8
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 8
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 8
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 8
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 8
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 8
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 8
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 claims description 8
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 claims description 8
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 8
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 8
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 7
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 7
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 6
- NFLGAXVYCFJBMK-RKDXNWHRSA-N (+)-isomenthone Natural products CC(C)[C@H]1CC[C@@H](C)CC1=O NFLGAXVYCFJBMK-RKDXNWHRSA-N 0.000 claims description 4
- ULPMRIXXHGUZFA-UHFFFAOYSA-N (R)-4-Methyl-3-hexanone Natural products CCC(C)C(=O)CC ULPMRIXXHGUZFA-UHFFFAOYSA-N 0.000 claims description 4
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 4
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 4
- 125000004343 1-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 4
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 claims description 4
- AILVYPLQKCQNJC-UHFFFAOYSA-N 2,6-dimethylcyclohexan-1-one Chemical compound CC1CCCC(C)C1=O AILVYPLQKCQNJC-UHFFFAOYSA-N 0.000 claims description 4
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 claims description 4
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 claims description 4
- LCVQGUBLIVKPAI-UHFFFAOYSA-N 2-(2-phenoxypropoxy)propan-1-ol Chemical compound OCC(C)OCC(C)OC1=CC=CC=C1 LCVQGUBLIVKPAI-UHFFFAOYSA-N 0.000 claims description 4
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 4
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 claims description 4
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 4
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 4
- OEKATORRSPXJHE-UHFFFAOYSA-N 2-acetylcyclohexan-1-one Chemical compound CC(=O)C1CCCCC1=O OEKATORRSPXJHE-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 4
- PFCHFHIRKBAQGU-UHFFFAOYSA-N 3-hexanone Chemical compound CCCC(=O)CC PFCHFHIRKBAQGU-UHFFFAOYSA-N 0.000 claims description 4
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 claims description 4
- LVSQXDHWDCMMRJ-UHFFFAOYSA-N 4-hydroxybutan-2-one Chemical compound CC(=O)CCO LVSQXDHWDCMMRJ-UHFFFAOYSA-N 0.000 claims description 4
- JSHPTIGHEWEXRW-UHFFFAOYSA-N 5-hydroxypentan-2-one Chemical compound CC(=O)CCCO JSHPTIGHEWEXRW-UHFFFAOYSA-N 0.000 claims description 4
- PSBKJPTZCVYXSD-UHFFFAOYSA-N 5-methylheptan-3-one Chemical compound CCC(C)CC(=O)CC PSBKJPTZCVYXSD-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- NFLGAXVYCFJBMK-UHFFFAOYSA-N Menthone Chemical compound CC(C)C1CCC(C)CC1=O NFLGAXVYCFJBMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- 229940075419 choline hydroxide Drugs 0.000 claims description 4
- TWXWPPKDQOWNSX-UHFFFAOYSA-N dicyclohexylmethanone Chemical compound C1CCCCC1C(=O)C1CCCCC1 TWXWPPKDQOWNSX-UHFFFAOYSA-N 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 4
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 4
- 229930007503 menthone Natural products 0.000 claims description 4
- PJGSXYOJTGTZAV-UHFFFAOYSA-N pinacolone Chemical compound CC(=O)C(C)(C)C PJGSXYOJTGTZAV-UHFFFAOYSA-N 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 claims description 4
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 4
- FYYLCPPEQLPTIQ-UHFFFAOYSA-N 2-[2-(2-propoxypropoxy)propoxy]propan-1-ol Chemical compound CCCOC(C)COC(C)COC(C)CO FYYLCPPEQLPTIQ-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims description 3
- 150000008044 alkali metal hydroxides Chemical group 0.000 claims description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- YWXLSHOWXZUMSR-UHFFFAOYSA-N octan-4-one Chemical compound CCCCC(=O)CCC YWXLSHOWXZUMSR-UHFFFAOYSA-N 0.000 claims description 3
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 claims description 3
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 2
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims 3
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims 1
- FITXPPRYFBNAPP-UHFFFAOYSA-N 5,7-dipropylundecan-6-one Chemical compound CCCC(CCCC)C(=O)C(CCC)CCCC FITXPPRYFBNAPP-UHFFFAOYSA-N 0.000 claims 1
- QQQCWVDPMPFUGF-ZDUSSCGKSA-N alpinetin Chemical compound C1([C@H]2OC=3C=C(O)C=C(C=3C(=O)C2)OC)=CC=CC=C1 QQQCWVDPMPFUGF-ZDUSSCGKSA-N 0.000 claims 1
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 claims 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 1
- 239000003921 oil Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 21
- 230000008569 process Effects 0.000 abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 abstract description 7
- 239000010937 tungsten Substances 0.000 abstract description 7
- 238000009472 formulation Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 21
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- 150000001875 compounds Chemical class 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 13
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 11
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- 239000002253 acid Substances 0.000 description 8
- 238000001446 dark-field microscopy Methods 0.000 description 8
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- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 8
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 7
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- OIRDTQYFTABQOQ-KQYNXXCUSA-N adenosine Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O OIRDTQYFTABQOQ-KQYNXXCUSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
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- 229910052739 hydrogen Inorganic materials 0.000 description 5
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- 229910052757 nitrogen Inorganic materials 0.000 description 5
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 125000006577 C1-C6 hydroxyalkyl group Chemical group 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- DCZFGQYXRKMVFG-UHFFFAOYSA-N cyclohexane-1,4-dione Chemical compound O=C1CCC(=O)CC1 DCZFGQYXRKMVFG-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 235000010265 sodium sulphite Nutrition 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
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- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
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- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
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- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
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- 239000011664 nicotinic acid Substances 0.000 description 1
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- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
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- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
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- FHHJDRFHHWUPDG-UHFFFAOYSA-L peroxysulfate(2-) Chemical compound [O-]OS([O-])(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-L 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920000333 poly(propyleneimine) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- WFIZEGIEIOHZCP-UHFFFAOYSA-M potassium formate Chemical compound [K+].[O-]C=O WFIZEGIEIOHZCP-UHFFFAOYSA-M 0.000 description 1
- RWPGFSMJFRPDDP-UHFFFAOYSA-L potassium metabisulfite Chemical compound [K+].[K+].[O-]S(=O)S([O-])(=O)=O RWPGFSMJFRPDDP-UHFFFAOYSA-L 0.000 description 1
- 239000004297 potassium metabisulphite Substances 0.000 description 1
- 235000010263 potassium metabisulphite Nutrition 0.000 description 1
- JKVUQLWTIZFTMF-UHFFFAOYSA-M potassium;2-oxopropanoate Chemical compound [K+].CC(=O)C([O-])=O JKVUQLWTIZFTMF-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 150000003212 purines Chemical class 0.000 description 1
- CSNFMBGHUOSBFU-UHFFFAOYSA-N pyrimidine-2,4,5-triamine Chemical compound NC1=NC=C(N)C(N)=N1 CSNFMBGHUOSBFU-UHFFFAOYSA-N 0.000 description 1
- MPNBXFXEMHPGTK-UHFFFAOYSA-N pyrimidine-4,5,6-triamine Chemical compound NC1=NC=NC(N)=C1N MPNBXFXEMHPGTK-UHFFFAOYSA-N 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 235000005875 quercetin Nutrition 0.000 description 1
- 229960001285 quercetin Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- HRZFUMHJMZEROT-UHFFFAOYSA-L sodium disulfite Chemical compound [Na+].[Na+].[O-]S(=O)S([O-])(=O)=O HRZFUMHJMZEROT-UHFFFAOYSA-L 0.000 description 1
- HLBBKKJFGFRGMU-UHFFFAOYSA-M sodium formate Chemical compound [Na+].[O-]C=O HLBBKKJFGFRGMU-UHFFFAOYSA-M 0.000 description 1
- 235000019254 sodium formate Nutrition 0.000 description 1
- 239000004296 sodium metabisulphite Substances 0.000 description 1
- 235000010262 sodium metabisulphite Nutrition 0.000 description 1
- 229940054269 sodium pyruvate Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ZOMVKCHODRHQEV-UHFFFAOYSA-M tetraethylphosphanium;hydroxide Chemical compound [OH-].CC[P+](CC)(CC)CC ZOMVKCHODRHQEV-UHFFFAOYSA-M 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- OORMKVJAUGZYKP-UHFFFAOYSA-M tetrapropylphosphanium;hydroxide Chemical compound [OH-].CCC[P+](CCC)(CCC)CCC OORMKVJAUGZYKP-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- SGKOGTXWLOGBID-UHFFFAOYSA-M triphenyl(propyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCC)C1=CC=CC=C1 SGKOGTXWLOGBID-UHFFFAOYSA-M 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0084—Antioxidants; Free-radical scavengers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/54—Aqueous solutions or dispersions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
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- Life Sciences & Earth Sciences (AREA)
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- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
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- Emergency Medicine (AREA)
- Dispersion Chemistry (AREA)
- Biochemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
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- Inorganic Chemistry (AREA)
Abstract
本發明係關於移除組成物及製程,其用於自其上具有化學機械拋光(CMP)後污染物及氧化鈰粒子之微電子裝置清潔該等粒子及污染物。該組成物達成該等氧化鈰粒子及CMP污染物材料自該微電子裝置之表面的高度有效移除而不損壞低k介電材料、氮化矽或含鎢材料。
Description
本發明概言之係關於用於自其上具有氧化鈰粒子及其他化學機械拋光漿液污染物之微電子裝置移除該等粒子及污染物之組成物。
使用微電子裝置晶圓來形成積體電路。微電子裝置晶圓包括基板,例如矽,多個區域圖案化至該基板中以沈積具有絕緣、導電或半導電性質之不同材料。 為獲得正確的圖案化,必須移除用於在基板上形成各層之過量材料。此外,為製造功能且可靠之電路,在後續處理之前製備平滑或平坦之微電子晶圓表面至關重要。因此,必需移除及/或拋光微電子裝置晶圓之某些表面。 化學機械拋光或平坦化(「CMP」)係自微電子裝置晶圓之表面移除材料,並藉由偶合物理製程(例如研磨)與化學製程(例如氧化或螯合)拋光(例如平坦化)表面之製程。在其最基本形式中,CMP涉及將具有活性化學之研磨漿液施加至拋光墊,該拋光墊在移除、平坦化及拋光製程期間擦亮微電子裝置晶圓之表面。利用純物理或純化學作用之移除或拋光製程在達成快速、均勻之移除方面不如二者之協同組合有效。另外,在積體電路之製造中,CMP漿液亦應能夠優先移除包含金屬及其他材料之複合層之膜,以使得可產生高度平坦之表面用於後續光微影或圖案化、蝕刻及薄膜處理。 在使用淺溝槽隔離(STI)製程在矽基板中形成隔離區之前段製程(FEOL)方法中,將墊氧化物膜及墊氮化物膜沈積在半導體基板上且圖案化以暴露基板之對應於隔離區之部分。然後,蝕刻基板之所暴露區域以形成溝槽。此後,使基板經受犧牲氧化製程以移除由基板蝕刻引起之損害,隨後在溝槽之表面上形成壁氧化物膜。然後,將溝槽埋藏之氧化物膜(例如藉由高密度電漿化學氣相沈積形成之氧化物膜,稱為HDP-氧化物膜)以使其埋藏於溝槽中之方式沈積在基板之表面上。然後,使HDP-氧化物膜之表面經受化學機械拋光直至墊氮化物膜暴露。隨後清潔所得基板且移除在溝槽蝕刻期間用作蝕刻障壁之墊氮化物膜,從而完成隔離區之形成。 相對於含二氧化矽之漿液,使用氧化鈰粒子之CMP漿液達成絕緣體之較快拋光速度。此外,基於氧化鈰之漿液因達成STI圖案平坦化及最少氧化物腐蝕之能力而最常使用。不利地,相對於氧化矽及氮化矽表面,基於氧化鈰之漿液因氧化鈰粒子電性相反之ζ電位而難以自STI結構移除。若裝置經製造且該等殘餘物仍留在晶圓上,則該等殘餘物將引起短路及電阻升高。氧化鈰粒子亦具有在使用氧化鈰漿液進行CMP處理後具有FinFET結構之問題。 目前用於移除氧化鈰粒子之最有效之濕式清潔調配物係稀氫氟酸(DHF)。然而,DHF不利地蝕刻氧化矽及其他低k介電材料。 因此,業內仍需要可有效地自微電子裝置之表面移除氧化鈰粒子、同時不會損害下伏材料(例如氮化矽、低k電介質(例如氧化矽)及含鎢層)之氧化鈰粒子移除組成物及製程。氧化鈰粒子移除組成物亦應有效地自微電子裝置之表面移除CMP漿液污染物。
本發明概言之係關於移除組成物及製程,具體而言可用於自其上具有氧化鈰粒子及CMP污染物之微電子裝置清潔該等粒子及CMP污染物。 在一態樣中,闡述水性移除組成物,該組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑及視情況至少一種氧清除劑。 在另一態樣中,闡述自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物之方法,該方法包含使微電子裝置與移除組成物接觸足夠時間以自微電子裝置至少部分地清潔該等粒子及污染物,其中該移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑及視情況至少一種氧清除劑。 在另一態樣中,闡述製品,該製品包含水性移除組成物、微電子裝置晶圓及選自由氧化鈰粒子、CMP污染物及其組合組成之群之材料,其中清潔組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑及視情況至少一種氧清除劑。 自隨後揭示內容及隨附申請專利範圍將更全面地明瞭其他態樣、特徵及優點。
相關申請案
本申請案主張於2017年1月18日提出申請之美國臨時申請案第62/447,729號之權益,該申請案之整個揭示內容之全文皆以引用方式併入本文中。 本發明概言之係關於可用於自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該(等)材料之組成物。有利地,氧化鈰粒子及CMP污染物使用組成物有效地移除,且另外組成物與氮化矽及低k介電(例如氧化矽)層相容。 為便於提及,「微電子裝置」對應於半導體基板、平板顯示器、相變化記憶體裝置、太陽電池板及其他產品,包括太陽能基板、光伏打裝置及微機電系統(MEMS),其經製造用於微電子、積體電路或電腦晶片應用。太陽能基板包括(但不限於)矽、非晶形矽、多晶矽、單晶矽、CdTe、銅銦硒化物、銅銦硫化物及鎵載砷化鎵。太陽能基板可經摻雜或未經摻雜。應理解,術語「微電子裝置」不欲以任何方式進行限制且包括最終將變成微電子裝置或微電子總成之任何基板。 如本文所用之「氧化鈰粒子」對應於可用於化學機械拋光漿液中之基於鈰之研磨粒子,包括例如具有式Ce2
O3
及CeO2
之氧化鈰。應瞭解,「氧化鈰粒子」可包含氧化鈰、由其組成或基本上由其組成。 如本文所用之「污染物」對應於存在於CMP漿液中之化學品、拋光漿液之反應副產物、CMP後殘餘物、存在於濕式蝕刻組成物中之化學品、濕式蝕刻組成物之反應副產物及為CMP製程、濕式蝕刻、電漿蝕刻或電漿灰化製程之副產物之任何其他材料。 如本文所用之「CMP後殘餘物」對應於來自拋光漿液之粒子,例如存在於漿液中之化學品、拋光漿液之反應副產物、富含碳之粒子、拋光墊粒子、刷塗減載粒子、構築粒子之設備材料、金屬、有機殘餘物及為CMP製程之副產物之任何其他材料。另外,若鎢係在CMP製程期間移除,則CMP後殘餘物可另外包含含鎢粒子。 如本文所定義之「低k介電材料」對應於在分層微電子裝置中用作介電材料之任何材料,其中該材料具有小於約3.5之介電常數。較佳地,低k介電材料包括低極性材料,例如含矽有機聚合物、含矽雜合有機/無機材料、有機矽酸鹽玻璃(OSG)、TEOS、氟化矽酸鹽玻璃(FSG)、二氧化矽及碳摻雜氧化物(CDO)玻璃。應瞭解,低k介電材料可具有不同密度及不同孔隙度。 如本文所定義之「錯合劑」包括熟習此項技術者理解為錯合劑、螯合劑及/或鉗合劑之彼等化合物。錯合劑將在化學上與欲使用本文所述之組成物移除之金屬原子及/或金屬離子組合或在物理上抓住該金屬原子及/或金屬離子。 「實質上不含」在本文中定義為小於2 wt.%,較佳小於1 wt.%,更佳小於0.5 wt.%,且最佳小於0.1 wt.%。「不含」意欲對應於小於0.001 wt%以將環境污染考慮在內。 如本文所用之「約」意欲對應於所述值± 5%。 如本文所用之「氧化劑」對應於氧化所暴露金屬以腐蝕金屬或在金屬上形成氧化物之化合物。氧化劑包括(但不限於):過氧化氫;其他過化合物,例如含有過氧單硫酸根、過硼酸根、過氯酸根、過碘酸根、過硫酸根、高錳酸根及過乙酸根陰離子之鹽及酸;及胺-N-氧化物。 如本文所用之「含氟化合物」對應於包含離子鍵結至另一原子之氟離子(F-
)之鹽或酸化合物。 如本文所定義之術語「障壁材料」對應於業內用於密封金屬線條(例如銅互連件)以最小化該金屬(例如銅)擴散至介電材料中之任何材料。較佳障壁層材料包括鉭、鈦、釕、鉿、鎢及其他耐火金屬及其氮化物及矽化物。 出於本發明之目的,「腺苷及腺苷衍生物之降解產物」包括(但不限於)腺嘌呤(C5
H5
N5
)、甲基化腺嘌呤(例如N-甲基-7H-嘌呤-6-胺,C6
H7
N5
)、二甲基化腺嘌呤(例如N,N-二甲基-7H-嘌呤-6-胺,C7
H9
N5
)、N4,N4-二甲基嘧啶-4,5,6-三胺(C6
H11
N5
)、4,5,6-三胺基嘧啶、尿囊素(C4
H6
N4
O3
)、羥基化C-O-O-C二聚體((C5
H4
N5
O2
)2
)、C-C橋接二聚體((C5
H4
N5
)2
或(C5
H4
N5
O)2
)、核糖(C5
H10
O5
)、甲基化核糖(例如5-(甲氧基甲基)四氫呋喃-2,3,4-三醇,C6
H12
O5
)、四甲基化核糖(例如2,3,4-三甲氧基-5-(甲氧基甲基)四氫呋喃,C9
H18
O5
)及其他核糖衍生物(例如甲基化水解二核糖化合物)。 如本文所用之「表面活性劑」對應於具有疏水基團及親水基團之兩親性物質,如熟習此項技術者所易於理解,但不包括聚合物。如本文所定義之「聚合物」對應於具有重複單體基團且可為自然或合成之物質。應瞭解,「聚合物」可為僅具有一種類型之重複單體之均聚物或具有一種以上類型之重複單體之共聚物。 如本文所用之「適於」自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物對應於自微電子裝置至少部分地移除該等粒子/污染物。清潔效能係藉由微電子裝置上之物體之減少來評級。舉例而言,清潔前及清潔後分析可使用原子力顯微鏡來實施。樣品上之粒子可暫存為一系列像素。可施加直方圖(例如Sigma Scan Pro)以過濾某一強度(例如231-235)之像素且對粒子數計數。粒子減少可使用下式來計算:應注意,提供測定清潔效能之方法僅用於實例且不欲對其進行限制。或者,清潔效能可視為經顆粒物覆蓋之總表面之百分比。舉例而言,AFM可經程式化以實施z平面掃描來鑑別某一高度臨限值以上之所關注形貌區域且然後計算經該等所關注區域覆蓋之總表面之面積。熟習此項技術者將容易理解,清潔後經該等所關注區域覆蓋之區域越小,移除組成物越有效。較佳地,使用本文所述之組成物自微電子裝置移除至少75%之粒子/污染物,移除更佳至少90%、甚至更佳至少95%、且最佳至少99%之粒子/污染物。 本文所述之組成物可以眾多種特定調配物體現,如下文更全面闡述。 在所有該等組成物中,其中組成物之具體組分參考包括0下限之重量百分比範圍論述,應理解該等組分可存在或不存在於組成物之多個具體實施例中且在該等組分存在之情況下,其可以基於採用該等組分之組成物之總重量低至0.00001重量%之濃度存在。 在第一態樣中,闡述移除組成物,其在一些實施例中較佳係水性移除組成物,包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、視情況至少一種錯合劑、視情況至少一種聚合物及視情況至少一種氧清除劑,由其組成或基本上由其組成。在第一態樣之一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑及至少一種有機添加劑,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及至少一種錯合劑,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及至少一種聚合物,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及至少一種氧清除劑,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、至少一種錯合劑及至少一種氧清除劑,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、至少一種錯合劑及至少一種聚合物,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、至少一種聚合物及至少一種氧清除劑,由其組成或基本上由其組成。在第一態樣之另一實施例中,移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、至少一種錯合劑、至少一種聚合物及至少一種氧清除劑,由其組成或基本上由其組成。熟習此項技術者應理解,本文所述之水性清潔組成物進一步包含水,較佳去離子水。 在每一實施例中,在自微電子裝置移除殘餘材料之前,移除組成物實質上可不含以下各項中之至少一者:氧化劑;含氟來源;表面活性劑;四甲基氫氧化銨;化學機械拋光研磨材料(例如二氧化矽、氧化鋁等);及選自由以下組成之群之腐蝕抑制劑:三聚氰酸、巴比妥酸及其衍生物、葡糖醛酸、方酸、α-酮酸、腺苷及其衍生物、核糖基嘌呤及其衍生物、嘌呤化合物及其衍生物、腺苷及腺苷衍生物之降解產物、三胺基嘧啶及其他經取代嘧啶、嘌呤-醣複合物、膦酸及其衍生物、菲咯啉、甘胺酸、菸鹼醯胺及其衍生物、類黃酮(例如黃酮醇及花青素及其衍生物)、槲黃素及其衍生物及其組合。另外,移除組成物不應固化形成聚合固體,包括例如光阻劑。 錯合劑(若存在)包括具有通式NR1
R2
R3
之物質,其中R1
、R2
及R3
可彼此相同或不同且選自由以下組成之群:氫、直鏈或具支鏈C1
-C6
烷基(例如甲基、乙基、丙基、丁基、戊基及己基)、直鏈或具支鏈C1
-C6
羥基烷基(例如羥基甲基、羥基乙基、羥基丙基、羥基丁基、羥基戊基及羥基己基)及如上文所定義直鏈或具支鏈C1
-C6
羥基烷基之C1
-C6
烷基醚。最佳地,R1
、R2
及R3
中之至少一者係直鏈或具支鏈C1
-C6
羥基烷基。實例包括(但不限於)烷醇胺,例如胺基乙基乙醇胺、N-甲基胺基乙醇、胺基乙氧基乙醇、二甲基胺基乙氧基乙醇、二乙醇胺、N-甲基二乙醇胺、單乙醇胺(MEA)、三乙醇胺(TEA)、1-胺基-2-丙醇、2-胺基-1-丁醇、異丁醇胺、三乙二胺、其他C1
-C8
烷醇胺及其組合。當胺包括烷基醚組分時,該胺可視為烷氧基胺,例如1-甲氧基-2-胺基乙烷。或者或除NR1
R2
R3
胺外,錯合劑可為多官能胺,包括(但不限於) 4-(2-羥基乙基)嗎啉(HEM)、1,2-環己烷二胺-N,N,N´,N´-四乙酸(CDTA)、乙二胺四乙酸(EDTA)、間-二甲苯二胺(MXDA)、亞胺基二乙酸(IDA)、2-(羥基乙基)亞胺基二乙酸(HIDA)、氮基三乙酸、硫脲、1,1,3,3-四甲脲、尿素、尿素衍生物、尿酸、丙胺酸、精胺酸、天冬醯胺、天冬胺酸、半胱胺酸、麩胺酸、麩醯胺酸、組胺酸、異白胺酸、白胺酸、離胺酸、甲硫胺酸、苯丙胺酸、脯胺酸、絲胺酸、蘇胺酸、色胺酸、酪胺酸、纈胺酸及其組合。或者或除上文所提及之錯合劑外,其他錯合劑可包括膦酸類(例如1-羥基亞乙基-1,1-二膦酸(HEDP)、1,5,9-三氮雜環十二烷-N,N',N"-參(亞甲基膦酸) (DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'"-四(亞甲基膦酸) (DOTP)、氮基參(亞甲基)三膦酸、二伸乙基三胺五(亞甲基膦酸) (DETAP)、胺基三(亞甲基膦酸)、雙(六亞甲基)三胺五亞甲基膦酸、1,4,7-三氮雜環壬烷-N,N',N"-參(亞甲基膦酸) (NOTP)、二膦酸羥基乙基酯、氮基參(亞甲基)膦酸、2-膦醯基-丁烷-1,2,3,4-四甲酸、羧基乙基膦酸、胺基乙基膦酸、草甘膦、伸乙基二胺四(亞甲基膦酸)苯基膦酸、其鹽及其衍生物)及/或羧酸(例如草酸、琥珀酸、馬來酸、蘋果酸、丙二酸、己二酸、苯二甲酸、檸檬酸、檸檬酸鈉、檸檬酸鉀、檸檬酸銨、丙三甲酸、三甲基醇丙酸、酒石酸、葡糖醛酸、2-羧基吡啶)及/或磺酸(例如試鈦靈(4,5-二羥基-1,3-苯二磺酸二鈉鹽))。較佳地,至少一種錯合劑包含選自由單乙醇胺、三乙醇胺、硫酸、檸檬酸及其組合組成之群之物質。若存在,基於移除組成物之總重量,移除組成物中錯合劑之量介於約0.01 wt%至約10 wt%範圍內。 pH調節劑包括酸及/或鹼。鹼包括(但不限於)鹼金屬氫氧化物(例如LiOH、KOH、RbOH、CsOH)、鹼土金屬氫氧化物(例如Be(OH)2
、Mg(OH)2
、Ca(OH)2
、Sr(OH)2
、Ba(OH)2
)、氫氧化銨(即氨)及具有式NR1
R2
R3
R4
OH之四烷基氫氧化銨化合物,其中R1
、R2
、R3
及R4
可彼此相同或不同且選自由以下組成之群:氫、直鏈或具支鏈C1
-C6
烷基(例如甲基、乙基、丙基、丁基、戊基及己基)、C1
-C6
羥基烷基(例如羥基甲基、羥基乙基、羥基丙基、羥基丁基、羥基戊基及羥基己基)及經取代或未經取代之C6
-C10
芳基(例如苄基)。可使用市售四烷基氫氧化銨,包括四甲基氫氧化銨(TMAH)、四乙基氫氧化銨(TEAH)、四丙基氫氧化銨(TPAH)、四丁基氫氧化銨(TBAH)、三丁基甲基氫氧化銨(TBMAH)、苄基三甲基氫氧化銨(BTMAH)、氫氧化膽鹼、乙基三甲基氫氧化銨、參(2-羥基乙基)甲基氫氧化銨、二乙基二甲基氫氧化銨及其組合。或者或另外,pH調節劑可為具有式(PR1
R2
R3
R4
)OH之四級鹼,其中R1
、R2
、R3
及R4
可彼此相同或不同且選自由以下組成之群:氫、直鏈C1
-C6
烷基(例如甲基、乙基、丙基、丁基、戊基及己基)、具支鏈C1
-C6
烷基、C1
-C6
羥基烷基(例如羥基甲基、羥基乙基、羥基丙基、羥基丁基、羥基戊基及羥基己基)、經取代之C6
-C10
芳基、未經取代之C6
-C10
芳基(例如苄基)及其任何組合,例如四丁基氫氧化鏻(TBPH)、四甲基氫氧化鏻、四乙基氫氧化鏻、四丙基氫氧化鏻、苄基三苯基氫氧化鏻、甲基三苯基氫氧化鏻、乙基三苯基氫氧化鏻、正丙基三苯基氫氧化鏻。酸包括(但不限於)硝酸、硫酸、磷酸、鹽酸、氫溴酸、甲磺酸、苯磺酸、對甲苯磺酸、三氟甲磺酸、乙酸、乳酸、乙醇酸及其任何組合。在一個實施例中,pH調節劑包含KOH。在另一實施例中,pH調節劑包含氫氧化膽鹼。在另一實施例中,pH調節劑包含氫氧化銨。在另一實施例中,pH調節劑包含至少一種鹼金屬氫氧化物及至少一種本文所列舉之其他氫氧化物。在另一實施例中,pH調節劑包含KOH及至少一種本文所列舉之其他氫氧化物。在另一實施例中,pH調節劑包含KOH以及氫氧化膽鹼及氫氧化銨中之至少一者。關於該等所列舉實施例中之任一者,pH調節劑可進一步包括至少一種酸,例如硫酸、檸檬酸或檸檬酸及硫酸之組合。 所涵蓋有機添加劑包括(但不限於) 2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮(HEP)、甘油、1,4-丁二醇、四氫噻吩碸(環丁碸)、二甲碸、乙二醇、丙二醇、二丙二醇、四甘二甲醚、二甘二甲醚、甲基異丁基酮、甲基乙基酮、丙酮、異丙醇、辛醇、乙醇、丁醇、甲醇、異佛爾酮、二醇醚(例如二乙二醇單甲醚、三乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單丁醚(DEGBE)、三乙二醇單丁醚(TEGBE)、乙二醇單己醚(EGHE)、二乙二醇單己醚(DEGHE)、乙二醇苯基醚、二乙二醇苯基醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁醚(例如DOWANOL PnB)、二丙二醇正丁醚、三丙二醇正丁醚、二丙二醇苯基醚、丙二醇苯基醚(PPh,例如DOWANOL PPh)、4-甲基-2-戊酮、2,4-二甲基-3-戊酮、環己酮、5-甲基-3-庚酮、3-戊酮、5-羥基-2-戊酮、2,5-己烷二酮、4-羥基-4-甲基-2-戊酮、丙酮、丁酮、2-甲基-2-丁酮、3,3-二甲基-2-丁酮、4-羥基-2-丁酮、環戊酮、2-戊酮、3-戊酮、1-苯基乙酮、苯乙酮、二苯甲酮、2-己酮、3-己酮、2-庚酮、3-庚酮、4-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、4-辛酮、二環己基酮、2,6-二甲基環己酮、2-乙醯基環己酮、2,4-戊二酮、薄荷酮、單乙醇胺(MEA)及其組合。在較佳實施例中,移除組成物中之至少一種有機添加劑包含至少一種二醇醚,包含丙二醇苯基醚。 聚合物(若存在)包括(但不限於)甲基丙烯酸與例如丙烯醯胺基甲基丙磺酸及馬來酸之均聚物及共聚物;馬來酸/乙烯醚共聚物;聚(乙烯基吡咯啶酮)/乙酸乙烯酯;均聚物,例如膦酸酯化聚乙二醇寡聚物、聚(丙烯酸酸) (PAA)、聚(丙烯醯胺)、聚(乙酸乙烯酯)、聚(乙二醇) (PEG)、聚(丙二醇) (PPG)、聚(苯乙烯磺酸)、聚(乙烯基磺酸)、聚(乙烯基膦酸)、聚(乙烯基磷酸)、聚(乙烯亞胺)、聚(丙烯亞胺)、聚烯丙基胺、聚氧化乙烯(PEO)、聚乙烯吡咯啶酮(PVP);PPG-PEG-PPG嵌段共聚物;PEG-PPG-PEG嵌段共聚物;及其組合。若存在,基於移除組成物之總重量,移除組成物中聚合物之量介於約0.0001 wt%至約1 wt%範圍內。 氧清除劑(若存在)包括(但不限於)二烷基羥基胺、羥基烷基羥基胺、卡肼、2-胺基乙基六氫吡嗪(AEP)、甲基乙基酮肟、氫醌、肼、1,3-環己二酮、1,4-環己二酮及2,5-環己二酮單獨或與3-甲氧基丙胺之組合、胺基酚、直鏈水溶性聚乙烯胺(例如三伸乙基四胺、四伸乙基五胺、五伸乙基六胺)、亞硫酸鈉、亞硫酸銨、亞硫酸鉀及其組合。較佳地,氧清除劑包括卡肼、2-胺基乙基六氫吡嗪(AEP)、甲基乙基酮肟、氫醌、肼、1,3-環己二酮、1,4-環己二酮及2,5-環己二酮單獨或與3-甲氧基丙胺之組合、胺基酚、直鏈水溶性聚乙烯胺(例如三伸乙基四胺、四伸乙基五胺、五伸乙基六胺)及其組合。不受限於理論,認為氧清除劑有助於穩定還原劑。若存在,基於移除組成物之總重量,移除組成物中氧清除劑之量介於約0.0001 wt%至約1 wt%範圍內。 還原劑包括(但不限於)抗壞血酸、L(+)-抗壞血酸、異抗壞血酸、抗壞血酸衍生物、亞硫酸、亞硫酸銨、亞硫酸鉀、亞硫酸鈉、多巴胺HCl、磷酸、次磷酸、偏二亞硫酸鉀、偏二亞硫酸鈉、偏二亞硫酸銨、羥基胺、還原糖(例如半乳糖、核糖、阿拉伯糖、木糖、岩藻糖、鼠李糖、甘露糖、果糖、山梨糖、半乳糖醛酸、葡糖胺、麥芽糖、乳糖)、丙酮酸鉀、丙酮酸鈉、丙酮酸銨、甲酸、甲酸鈉、甲酸鉀、甲酸銨、多巴胺、二氧化硫溶液及其任何組合。較佳地,至少一種還原劑包含至少一種亞硫酸根離子及至少一種其他所列舉還原劑,例如亞硫酸、亞硫酸鉀、亞硫酸銨、次磷酸及其任何組合。應瞭解,當亞硫酸銨存在時,亞硫酸銨可原位產生,其中特定組分之組合可形成亞硫酸銨以幫助移除殘餘物,例如氧化鈰粒子及其他CMP後殘餘物。 包括上文所述組分之水性移除組成物尤其可用於自微電子裝置結構移除氧化鈰粒子及污染物(例如CMP後殘餘物及污染物)。本文所述之水性移除組成物之pH可介於約1至約13.9範圍內。在一個實施例中,pH係介於約3至約13.9、較佳約3.5至約13.9範圍內。在另一實施例中,pH係介於約3.5至約5.5範圍內。在另一實施例中,pH係介於約4.5至約8.5、較佳約7.5至8.5範圍內。在另一實施例中,pH係介於約9至約13.7範圍內。 在尤佳實施例中,水性移除組成物包含還原劑、至少一種pH調節劑、至少一種有機添加劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含包括亞硫酸根離子之化合物、至少一種pH調節劑、至少一種有機添加劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含還原劑、至少一種pH調節劑、丙二醇苯基醚及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含包括亞硫酸根離子之化合物、至少一種pH調節劑、丙二醇苯基醚及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含還原劑、至少一種錯合劑、至少一種pH調節劑、至少一種有機添加劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含包括亞硫酸根離子之化合物、至少一種錯合劑、至少一種pH調節劑、至少一種有機添加劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含包括亞硫酸根離子之化合物、檸檬酸、至少一種pH調節劑、至少一種有機添加劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含包括亞硫酸根離子之化合物、檸檬酸、至少一種pH調節劑、丙二醇苯基醚及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含還原劑(例如包含亞硫酸根離子之化合物)、至少一種pH調節劑、至少一種有機添加劑、至少一種氧清除劑及水,由其組成或基本上由其組成。在另一實施例中,水性移除組成物包含還原劑(例如包含亞硫酸根離子之化合物)、至少一種pH調節劑、至少一種有機添加劑、至少一種錯合劑(例如檸檬酸)、至少一種氧清除劑及水,由其組成或基本上由其組成。 關於組成量,有機添加劑對還原劑之重量%比率介於約0.001:1至約10:1、較佳約0.1:1至約5:1範圍內。基於本文所揭示之pH值及熟習此項技術者之知識,pH調節劑之量端視在製備移除組成物以供使用時尋求之最終pH而定。 各組分之重量%比率之範圍將涵蓋組成物之所有可能的濃或稀實施例。為此,在一個實施例中,提供濃移除組成物,其可經稀釋以用作清潔溶液。濃組成物或「濃縮物」有利地允許使用者(例如CMP製程工程師)在使用時將該濃縮物稀釋至期望強度及pH。濃水性移除組成物之稀釋度可介於約1:1至約2500:1、較佳約5:1至約200:1、且最佳約20:1至約120:1範圍內,其中水性移除組成物係在工具處或工具稍前處用溶劑(例如去離子水)稀釋。熟習此項技術者應瞭解,在稀釋後,本文所揭示組分之重量%比率之範圍應保持不變。 本文所述之組成物可用於多個應用中,包括(但不限於)蝕刻後殘餘物移除、灰分後殘餘物移除表面製備、電鍍後清潔及CMP後殘餘物移除。另外,涵蓋本文所述之水性清潔組成物可用於清潔及保護其他金屬(例如含銅及含鎢)產品,包括(但不限於)裝飾金屬、金屬打線、印刷電路板及使用金屬或金屬合金之其他電子包裝。 在另一較佳實施例中,本文所述之水性移除組成物進一步包括氧化鈰粒子及/或CMP污染物。氧化鈰粒子及污染物在清潔開始後變成移除組成物之組分且將溶解及/或懸浮於組成物中。 水性移除組成物容易地藉由簡單地添加各別成分並混合至均質狀態來調配。此外,組成物可容易地調配為單包裝調配物或在使用時或使用前混合之多部分調配物,例如可在工具處或在工具上游之儲存罐中混合多部分調配物之個別部分。各別成分之濃度在多種具體組成物中可廣泛變化,即更稀或更濃,且應瞭解,本文所述之組成物可變化地且替代性地包含與本文揭示內容一致之成分之任一組合、由其組成或基本上由其組成。 因此,另一態樣係關於套組,其包括一或多個容器中之一或多種適於形成本文所述組成物之組分。該套組可包括一或多個容器中之至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑、視情況至少一種聚合物及視情況至少一種氧清除劑,用於在晶圓製造廠(fab)處或在使用時與其他溶劑(例如水)組合。或者,該套組可包括一或多個容器中之至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑、視情況至少一種聚合物及視情況至少一種氧清除劑,用於在晶圓製造廠處或在使用時與至少一種pH調節劑及其他溶劑(例如水)組合。該套組之容器必須適於儲存及運送組成物且可為例如NOWPak®容器(Entegris, Inc., Billerica, Mass., USA)。 一或多個含有水性移除組成物之組分之容器較佳包括使該一或多個容器中之組分流體連通以供摻和及分配之構件。舉例而言,在提及NOWPak®容器時,可將氣壓施加至該一或多個容器中之襯裡之外部以排放襯裡之至少一部分內容物且因此實現流體連通用於摻和及分配。或者,可將氣壓施加至習用可加壓容器之頂隙或可使用幫浦來實現流體連通。另外,該系統較佳包括用於將經摻和移除組成物分配至製程工具之分配埠。 在施加至微電子製造操作時,本文所述之水性移除組成物可用於自微電子裝置之表面清潔氧化鈰粒子及/或CMP污染物(例如CMP後殘餘物及污染物)。水性移除組成物不會損害裝置表面上之低k介電材料(例如氧化矽)、氮化矽層或含鎢層。較佳地,水性移除組成物移除在移除粒子之前存在於裝置上之至少85%之氧化鈰粒子,更佳至少90%,甚至更佳至少95%,且最佳至少99%。 在CMP後粒子及污染物移除應用中,本文所述之水性移除組成物可與諸如兆音波及刷洗等眾多種習用清潔工具一起使用,包括(但不限於) Verteq單晶圓兆音波金指、OnTrak systems DDS (雙面刷洗器)、SEZ或其他單晶圓噴霧清洗、Applied Materials Mirra-Mesa™ /Reflexion ™/Reflexion LK™及兆音波批式濕洗臺式系統。 在使用本文所述之組成物自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物時,通常使水性移除組成物與裝置在介於約20℃至約90℃、較佳約20℃至約50℃範圍內之溫度下接觸約5 sec至約10分鐘、較佳約1 sec至20 min、較佳約15 sec至約5 min之時間。該等接觸時間及溫度具有說明性,且可採用在該方法之廣泛實踐內有效地自裝置至少部分地移除氧化鈰粒子及CMP污染物之任何其他適宜時間及溫度條件。「至少部分地清潔」及「實質移除」僅對應於移除在粒子移除之前存在於裝置上之至少85%之氧化鈰粒子,更佳至少90%,甚至更佳至少95%,且最佳至少99%。 在達成期望粒子移除作用後,水性移除組成物可容易地自先前已施加其之裝置移除,如可能在本文所述組成物之給定最終用途應用中合意且有效。較佳地,清洗溶液包括去離子水。此後,可使用氮或旋轉-乾燥循環乾燥裝置。 另一態樣係關於根據本文所述之方法製造之經改良微電子裝置及含有該等微電子裝置之產品。 另一態樣係關於再循環水性移除組成物,其中移除組成物可再循環直至粒子及/或污染物負載達到水性移除組成物可適應之最大量,如熟習此項技術者容易地確定。 另一態樣係關於製造包含微電子裝置之製品之方法,該方法包含使微電子裝置與水性移除組成物接觸足夠時間,以使用本文所述之移除組成物自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物並將該等微電子裝置納入該製品中。 在另一態樣中,闡述自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物之方法。該方法包含用CMP漿液拋光微電子裝置,其中CMP漿液包含氧化鈰粒子;使微電子裝置與水性移除組成物接觸足夠時間以自微電子裝置移除氧化鈰粒子及CMP污染物以形成含CMP後粒子之組成物,該水性移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑、視情況至少一種聚合物及視情況至少一種氧清除劑;及使微電子裝置與含CMP後粒子之組成物連續接觸足夠時間量以實現微電子裝置之實質清潔。可將上文所述之任一組分用於移除氧化鈰粒子及CMP污染物之本方法中。 另一態樣係關於製品,其包含水性移除組成物、微電子裝置晶圓及選自由氧化鈰粒子、CMP污染物及其組合組成之群之材料,其中移除組成物包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑、水、視情況至少一種錯合劑、視情況至少一種聚合物及視情況至少一種氧清除劑。 藉由以下非限制性實例更全面地說明本發明之特徵及優點,其中除非另有明確說明,否則所有份數及百分比皆係以重量計。實例 1
製備下文所顯示之移除組成物(每一調配物中之餘量係DI水)且用水以100:1稀釋。該製程涉及將TEOS基板於含氧化鈰之漿液中浸沒5分鐘,將基板在DI水中清洗30秒,將基板於移除組成物中浸沒60秒,且然後再用DI水清洗30秒。浸沒期間之溫度係室溫。利用掃描電子顯微法(SEM)、感應耦合電漿質譜(ICP-MS)及暗視野顯微法(DFM)測定清潔之程度,且與比較調配物1比較。 調配物A:2 wt%檸檬酸、2 wt%丙二醇苯基醚、餘量水。調節及1:100稀釋後之pH = 2.5 調配物B:2 wt%檸檬酸、2 wt%亞硫酸鈉、餘量水。調節及1:100稀釋後之pH = 2.6 調配物C:2 wt%檸檬酸、2 wt%丙二醇苯基醚、2 wt%亞硫酸鈉、餘量水。調節及1:100稀釋後之pH = 2.6 比較調配物1:NH4
OH:H2
O2
:H2
O = 1:1:5 DFM數據指示清潔後氧化鈰污染之總面積。發現調配物A-C在清潔方面皆比比較調配物1有效。具體而言,發現調配物C比比較調配物3.5×有效且比調配物A 2×有效。 基於調配物C之有效性,製備其他組成物且測定DFM數據,如表1中所顯示。每一調配物中之餘量係DI水。添加KOH以將pH調節至目標pH。用水以100:1稀釋調配物且在室溫下將包含含氧化鈰漿液之TEOS基板於其中浸沒5分鐘。 表1:調配物及DFM數據
發現調配物J相對於比較調配物1具有150×改良之性能。調配物D、F、H、I及N-R在清潔方面亦比比較調配物有效。應注意,該等調配物具有介於4-6範圍內之較高pH。實例 2
製備下文所顯示之移除組成物(每一調配物中之餘量係DI水)且用水以100:1稀釋。該製程涉及將TEOS基板於含氧化鈰之漿液中浸沒5分鐘,將基板在DI水中清洗30秒,將基板於移除組成物中浸沒60秒,且然後再用DI水清洗30秒。浸沒期間之溫度係室溫。利用掃描電子顯微法(SEM)、感應耦合電漿質譜(ICP-MS)及暗視野顯微法(DFM)測定清潔之程度。具體而言,表2顯示每一移除組成物之DMF數據。 表2:調配物及DFM數據
儘管本發明之說明性實施例及特徵已多番揭示於本文中,但應瞭解,上文所述之實施例及特徵不欲限制本發明,且熟習此項技術者基於本文之揭示內容將明瞭其他變化形式、修改及其他實施例。因此,本發明應在廣義上理解為涵蓋在下文所述申請專利範圍之精神及範圍內之所有該等變化形式、修改及替代性實施例。
Claims (10)
- 一種水性移除組成物,其包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及水,其中該有機添加劑包含選自由下述所組成之群的物種:2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮(HEP)、甘油、1,4-丁二醇、四氫噻吩碸(環丁碸)、二甲碸、乙二醇、丙二醇、二丙二醇、四甘二甲醚、二甘二甲醚、甲基異丁基酮、甲基乙基酮、丙酮、異丙醇、辛醇、乙醇、丁醇、甲醇、異佛爾酮、二醇醚(例如二乙二醇單甲醚、三乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單丁醚(DEGBE)、三乙二醇單丁醚(TEGBE)、乙二醇單己醚(EGHE)、二乙二醇單己醚(DEGHE)、乙二醇苯基醚、二乙二醇苯基醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁醚(例如DOWANOL PnB)、二丙二醇正丁醚、三丙二醇正丁醚、二丙二醇苯基醚、丙二醇苯基醚(PPh,例如DOWANOL PPh)、4-甲基-2-戊酮、2,4-二甲基-3-戊酮、環己酮、5-甲基-3-庚酮、3-戊酮、5-羥基-2-戊酮、2,5-己烷二酮、4-羥基-4-甲基-2-戊酮、丙酮、丁酮、2-甲基-2-丁酮、3,3-二甲基-2-丁酮、4-羥基-2-丁酮、環戊酮、2-戊酮、3-戊酮、1-苯基乙酮、苯乙酮、二苯甲酮、2-己酮、3-己酮、2-庚酮、3-庚酮、4-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、4-辛酮、二環己基酮、2,6-二甲基環己酮、2-乙醯基環己酮、2,4-戊二酮、薄荷酮、單乙醇胺(MEA)及其組合,其中該水性移除組成物適於自其上具有氧化鈰粒子及化學機械拋光(CMP)污染物之微電子裝置移除該等粒子及CMP污染物。
- 如請求項1之水性移除組成物,其中該至少一種pH調節劑係鹼金屬氫氧化物、氫氧化銨、氫氧化膽鹼或四烷基氫氧化銨。
- 如請求項1之水性移除組成物,其中該至少一種pH調節劑係硫酸、檸檬酸或其組合。
- 如請求項1之水性移除組成物,其中該至少一種有機添加劑包含二醇醚。
- 如請求項1之水性移除組成物,其中該至少一種還原劑包含至少一種亞硫酸根離子。
- 如請求項1之水性移除組成物,其進一步包含至少一種氧清除劑。
- 如請求項1之水性移除組成物,其進一步包含至少一種錯合劑。
- 如請求項1之水性移除組成物,其進一步包含至少一種聚合物。
- 一種自其上具有氧化鈰粒子及CMP污染物之微電子裝置移除該等粒子及污染物之方法,該方法包含使該微電子裝置與包含至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及水之水性移除組成物接觸,其中該有機添加劑包含選自由下述所組成之群的物種:2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮(HEP)、甘 油、1,4-丁二醇、四氫噻吩碸(環丁碸)、二甲碸、乙二醇、丙二醇、二丙二醇、四甘二甲醚、二甘二甲醚、甲基異丁基酮、甲基乙基酮、丙酮、異丙醇、辛醇、乙醇、丁醇、甲醇、異佛爾酮、二醇醚(例如二乙二醇單甲醚、三乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單丁醚(DEGBE)、三乙二醇單丁醚(TEGBE)、乙二醇單己醚(EGHE)、二乙二醇單己醚(DEGHE)、乙二醇苯基醚、二乙二醇苯基醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁醚(例如DOWANOL PnB)、二丙二醇正丁醚、三丙二醇正丁醚、二丙二醇苯基醚、丙二醇苯基醚(PPh,例如DOWANOL PPh)、4-甲基-2-戊酮、2,4-二甲基-3-戊酮、環己酮、5-甲基-3-庚酮、3-戊酮、5-羥基-2-戊酮、2,5-己烷二酮、4-羥基-4-甲基-2-戊酮、丙酮、丁酮、2-甲基-2-丁酮、3,3-二甲基-2-丁酮、4-羥基-2-丁酮、環戊酮、2-戊酮、3-戊酮、1-苯基乙酮、苯乙酮、二苯甲酮、2-己酮、3-己酮、2-庚酮、3-庚酮、4-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、4-辛酮、二環己基酮、2,6-二甲基環己酮、2-乙醯基環己酮、2,4-戊二酮、薄荷酮、單乙醇胺(MEA)及其組合;及自該微電子裝置至少部分地清潔該等粒子及污染物,其中該微電子裝置包含氮化矽及低k介電層。
- 一種套組,其包含一或多個容器,其中具有適於自其上具有氧化鈰粒子及化學機械拋光(CMP)污染物之微電子裝置移除該等粒子及CMP污染物之組分,其中該套組之一或多個容器含有至少一種pH調節劑、至少一種還原劑、至少一種有機添加劑及水,其中該有機添加劑包含選自由下述 所組成之群的物種:2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮(HEP)、甘油、1,4-丁二醇、四氫噻吩碸(環丁碸)、二甲碸、乙二醇、丙二醇、二丙二醇、四甘二甲醚、二甘二甲醚、甲基異丁基酮、甲基乙基酮、丙酮、異丙醇、辛醇、乙醇、丁醇、甲醇、異佛爾酮、二醇醚(例如二乙二醇單甲醚、三乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單丁醚(DEGBE)、三乙二醇單丁醚(TEGBE)、乙二醇單己醚(EGHE)、二乙二醇單己醚(DEGHE)、乙二醇苯基醚、二乙二醇苯基醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁醚(例如DOWANOL PnB)、二丙二醇正丁醚、三丙二醇正丁醚、二丙二醇苯基醚、丙二醇苯基醚(PPh,例如DOWANOL PPh)、4-甲基-2-戊酮、2,4-二甲基-3-戊酮、環己酮、5-甲基-3-庚酮、3-戊酮、5-羥基-2-戊酮、2,5-己烷二酮、4-羥基-4-甲基-2-戊酮、丙酮、丁酮、2-甲基-2-丁酮、3,3-二甲基-2-丁酮、4-羥基-2-丁酮、環戊酮、2-戊酮、3-戊酮、1-苯基乙酮、苯乙酮、二苯甲酮、2-己酮、3-己酮、2-庚酮、3-庚酮、4-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、4-辛酮、二環己基酮、2,6-二甲基環己酮、2-乙醯基環己酮、2,4-戊二酮、薄荷酮、單乙醇胺(MEA)及其組合。
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