JP2022066555A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2022066555A JP2022066555A JP2022037813A JP2022037813A JP2022066555A JP 2022066555 A JP2022066555 A JP 2022066555A JP 2022037813 A JP2022037813 A JP 2022037813A JP 2022037813 A JP2022037813 A JP 2022037813A JP 2022066555 A JP2022066555 A JP 2022066555A
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- Prior art keywords
- semiconductor device
- conductive member
- connecting member
- distance
- convex
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 229920005989 resin Polymers 0.000 claims abstract description 57
- 239000011347 resin Substances 0.000 claims abstract description 57
- 239000000945 filler Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 description 59
- 238000011156 evaluation Methods 0.000 description 43
- 238000002474 experimental method Methods 0.000 description 19
- 239000003822 epoxy resin Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 229920000647 polyepoxide Polymers 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000012360 testing method Methods 0.000 description 10
- 230000009477 glass transition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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Abstract
Description
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1(a)~図1(c)は、第1実施形態に係る半導体装置を例示する模式図である。 図2は、第1実施形態に係る半導体装置を例示する模式図である。
図1(c)は、斜視図である。図1(b)は、図1(c)のA1-A2線断面図である。図1(a)及び図2は、図1(b)に示す一部PAを拡大した断面図である。図1(c)のB1-B2線断面における構成の例については、後述する。
図3は、上記の第1実験及び第2実験の結果を合わせて示している。図3の横軸は、はんだの厚さtc(μm)である。縦軸は、オン抵抗の変動ΔRon(相対値)である。オン抵抗の変動ΔRonは、熱サイクル試験の前のオン抵抗R1と、熱サイクル試験の後のオン抵抗R2と、の差のオン抵抗R1に対する比((R2-R1)/R1))である。
図4(a)は、実施形態に係る半導体装置110に対応する。半導体装置110においては、第1部分p1に凹凸形状(第1凹部21d及び第1凸部21p)が設けられる。図4(b)は、参考例の半導体装置109に対応する。半導体装置109においては、第1導電部材21の第1部分p1に上記の凹凸形状が設けられない。
図5は、第1実施形態に係る半導体装置を例示する模式的断面図である。
図5は、図1(c)のB1-B2線断面の一部を拡大して示す。
図6(a)に示すように、半導体装置111においては、第1部分p1の裏面(第1面21fと反対側の面)に凹凸形状が設けられている。第1部分p1の裏面の凹凸形状は、第1部分p1の第1面21fの凹凸形状に沿っている。半導体装置111におけるこれ以外の構成は、半導体装置110の構成と同様である。
図7は、図1(c)のA1-A2線に対応する断面の拡大図である。
図8(a)に示すように、半導体装置121においては、第3部分p2の裏面(第2面22fと反対側の面)に凹凸形状が設けられている。裏面の凹凸形状は、第2面22fの凹凸形状に沿っている。半導体装置121におけるこれ以外の構成は、半導体装置120の構成と同様である。
第2実施形態は、製造方法に係る。以下、第1導電部材21の製造方法、及び、半導体装置の製造方法の例について説明する。
これらの図は、第1導電部材21(半導体装置110の一部の部品)の製造方法を例示している。
図10(a)~図10(e)は、第2実施形態に係る半導体装置の製造方法を例示する模式的断面図である。
図10(a)に示すように、リードフレーム28を準備する。リードフレーム28は、第2導電部材22となる部分、及び、第3導電部材23となる部分を含む。
図11は、第3実施形態に係る半導体装置を例示する模式的断面図である。
図11は、図1(a)に対応する部分の断面図である。
図11に示すように、本実施形態に係る半導体装置130においては、第1接続部材41は、粒41pを含む。粒41pは、例えば、金属ボールである。粒41pは、例えばNiを含むボールである。半導体装置130におけるこれ以外の構成は、例えば、第1実施形態に係る半導体装置(例えば半導体装置110など)と同様である。
図12は、図1(a)に対応する部分の断面図である。
図12に示すように、本実施形態に係る半導体装置131においても、第1接続部材41は、粒41pを含む。半導体装置131においては、第1部分p1に凹凸形状が設けられていない。半導体装置131におけるこれ以外の構成は、半導体装置130と同様である。
図13は、半導体装置131に対応する。図13に示すように、粒41pにより、第1部分p1及び第3部分p3の間の距離が制御される。この例では、第1部分p1と第3部分p3との間の距離は、約20μm~約30mである。
図14には、第1~第7試料SP01~SP07の評価結果が示されている。
第1試料SP01においては、エポキシ樹脂M04が用いられ、フィラー濃度Cfは、88.0wt%(重量%)である。第2試料SP02においては、エポキシ樹脂M02が用いられ、フィラー濃度Cfは、87.5wt%である。第3試料SP03においては、エポキシ樹脂M01が用いられ、フィラー濃度Cfは、85.0wt%である。第4試料SP04においては、エポキシ樹脂M03が用いられ、フィラー濃度Cfは、84.0wt%である。第5試料SP05においては、エポキシ樹脂M05が用いられ、フィラー濃度Cfは、84.0wt%である。第6試料SP06においては、エポキシ樹脂M06が用いられ、フィラー濃度Cfは、80.0wt%である。第7試料SP07においては、エポキシ樹脂M07が用いられ、フィラー濃度Cfは、77.0wt%である。
図15は、第2実験の結果を示す。第2実験においては、樹脂部30のエポキシ樹脂の材料が変更される。エポキシ樹脂の材料の変更により、ガラス転移温度Tgが変更される。第2実験において、フィラー濃度Cfは、80.0wt%で一定である。第2実験においても、半導体装置において、第1部分p1及び第3部分p3に凹凸形状は設けられていない。
Claims (16)
- 半導体チップと、
第1部分及び第2部分を含む第1導電部材であって、前記第2部分は前記半導体チップと電気的に接続され、前記半導体チップから前記第2部分に向かう方向は第1方向に沿い、前記第2部分から前記第1部分に向かう方向は、前記第1方向と交差する第2方向に沿う、前記第1導電部材と、
第3部分を含む第2導電部材と、
前記第1部分と前記第3部分との間に設けられた導電性の第1接続部材と、
前記第1部分、前記第3部分及び前記第1接続部材の周りに設けられた第1部分領域を含む樹脂部と、
を備え、
前記第1部分は、前記第1接続部材に対向する凸部を有し、
前記第1接続部材は、前記凸部、及び前記第1部分の側面と接する、半導体装置。 - 前記凸部は、前記第1部分の両端部から内側に離れて設けられている、請求項1に記載の半導体装置。
- 前記第1部分は前記第1接続部材と対向する第1底部を有し、前記第1部分の前記側面は前記第1底部と接続する面である請求項1又は請求項2記載の半導体装置。
- 前記第1部分は前記第1接続部材と対向する第1底部を有し、前記凸部から前記第1底部までの深さは、10μmを超える、請求項1又は請求項2に記載の半導体装置。
- 前記凸部から前記第1底部までの深さは、60μm以下である、請求項4記載の半導体装置。
- 半導体チップと、
第1部分及び第2部分を含む第1導電部材であって、前記第2部分は前記半導体チップと電気的に接続され、前記半導体チップから前記第2部分に向かう方向は第1方向に沿い、前記第2部分から前記第1部分に向かう方向は、前記第1方向と交差する第2方向に沿う、前記第1導電部材と、
第3部分及び第4部分を含む第2導電部材と、
前記第1部分と前記第3部分との間に設けられた導電性の第1接続部材と、
前記第1部分、前記第3部分及び前記第1接続部材の周りに設けられた第1部分領域を含む樹脂部と、
を備え、
前記第4部分の少なくとも一部は、前記樹脂部に覆われず、
前記第3部分から前記第4部分に向かう方向は、前記第1方向と交差する第3方向に沿い、
前記第3部分は、前記第1接続部材に対向する凸部を有し、
前記第1接続部材は、前記凸部、及び、前記第1部分の側面と接する、半導体装置。 - 前記第3部分は前記第1接続部材と対向する第2底部を有し、前記樹脂部は第2底部と接する請求項6に記載の半導体装置。
- 前記凸部は、前記第3部分の両端部から内側に離れて設けられている、請求項6又は請求項7に記載の半導体装置。
- 前記樹脂部は、複数のフィラーを含み、前記複数のフィラーの前記樹脂部における濃度は、76重量%以上84重量%以下である、請求項1~8のいずれか1つに記載の半導体装置。
- 半導体チップと、
第1部分及び第2部分を含む第1導電部材であって、前記第2部分は前記半導体チップと電気的に接続され、前記半導体チップから前記第2部分に向かう方向は第1方向に沿い、前記第2部分から前記第1部分に向かう方向は、前記第1方向と交差する第2方向に沿う、前記第1導電部材と、
第3部分を含む第2導電部材と、
前記第1部分と前記第3部分との間に設けられ、複数のフィラーを含み、前記複数のフィラーの前記樹脂部における濃度は、76重量%以上84重量%以下である導電性の第1接続部材と、
前記第1部分、前記第3部分及び前記第1接続部材の周りに設けられた第1部分領域を含む樹脂部と、を有する、半導体装置。 - 導電性の第2接続部材をさらに備え、
前記第2接続部材は、前記半導体チップと前記第2部分との間に位置し、前記半導体チ
ップと前記第2部分とを電気的に接続し、
前記樹脂部は、前記第2部分及び前記第2接続部材の周りに設けられた第2部分領域を
さらに含む、請求項1~10のいずれか1つに記載の半導体装置。 - 第5部分を含む第3導電部材と、
前記第5部分と前記半導体チップとの間に設けられた導電性の第3接続部材と、
をさらに備え、
前記樹脂部は、前記第5部分及び前記第3接続部材の周りに設けられた第3部分領域をさらに含む、請求項1~11のいずれか1つに記載の半導体装置。 - 前記第3導電部材は、第6部分をさらに含み、
前記第6部分の少なくとも一部は、前記樹脂部に覆われない、請求項12に記載の半導体装置。 - 前記第1接続部材は、粒を含み、前記粒のサイズは、10μmを超え20μm以下である、請求項1~13のいずれか1つに記載の半導体装置。
- 前記第2部分は前記第2方向において第1の幅と前記第1方向及び前記第2方向に対して垂直な方向の第4方向において第2の幅を有し、
前記第2の幅は前記第1の幅よりも大きい、請求項1~14のいずれか1つに記載の半導体装置。 - 前記第1部分は前記第2方向において第3の幅と前記第1方向及び前記第2方向に対して垂直な方向の第4方向において第4の幅を有し、
前記第4の幅は前記第3の幅よりも大きい、請求項1~15のいずれか1つに記載の半導体装置。
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JP6752982B2 (ja) * | 2017-10-26 | 2020-09-09 | 新電元工業株式会社 | 半導体装置、及び、半導体装置の製造方法 |
JP7043225B2 (ja) * | 2017-11-08 | 2022-03-29 | 株式会社東芝 | 半導体装置 |
EP3761358A1 (en) * | 2019-07-02 | 2021-01-06 | Nexperia B.V. | A lead frame assembly for a semiconductor device |
JP7271381B2 (ja) | 2019-09-20 | 2023-05-11 | 株式会社東芝 | 半導体装置 |
JP7341078B2 (ja) * | 2020-02-07 | 2023-09-08 | 日立Astemo株式会社 | 半導体装置 |
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JP7451455B2 (ja) * | 2021-03-19 | 2024-03-18 | 株式会社東芝 | 半導体装置 |
JP2022146341A (ja) | 2021-03-22 | 2022-10-05 | 株式会社東芝 | 半導体装置 |
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