JP2020507916A - イオン注入ステップ中のドナー基板の縁部におけるゾーンのマスキング - Google Patents
イオン注入ステップ中のドナー基板の縁部におけるゾーンのマスキング Download PDFInfo
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- 238000005468 ion implantation Methods 0.000 title claims description 14
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- 238000000034 method Methods 0.000 claims abstract description 54
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- 239000007943 implant Substances 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 19
- -1 helium ions Chemical class 0.000 claims description 16
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
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- 230000003313 weakening effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
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- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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Abstract
Description
線81は、本発明の第1の実施例に係るドナー基板1内の注入プロファイルを表す。ヘリウムイオンは、ドナー基板1の面取りゾーン7に対応するドナー基板1の縁部5のゾーンをマスキングするために、図2dに示すようなマスク43を使用して、注入量c1(95keV及び2.5e16at/cm2)で注入される。
本発明に係る第2の実施例によれば、マスク43は、選択されることがあり、したがって、ドナー基板1の縁部5のゾーンが、ドナー基板1の面取りゾーン7より広く、ヘリウムイオンの注入量が、中央ゾーン9の注入量よりも少ない。従って、r2<r1である。
図3a及び3bを参照して説明されたような本発明の別の実施例によれば、第2の注入ステップは、第1の注入作業後にドナー基板に実行され、対応する注入プロファイルは、図3cの一点鎖線85で示される。
Claims (18)
- キャリア基板(11)上に層を移転するプロセスで特に使用されるべきドナー基板(1)の内側の所定の分離ゾーン(19)を形成するためのプロセスにおいて、
前記ドナー基板(1)の縁部(5)のゾーンの注入量(25)が前記ドナー基板(1)の中央ゾーン(9)の注入量(27)より少ないように実行される原子及び/又はイオン注入ステップ(17)を含む、ことを特徴とするプロセス。 - 前記注入ステップ(17)が、前記注入(17)が前記ドナー基板(1)の前記中央ゾーン(9)に限定されるように実行される、請求項1に記載のプロセス。
- 前記ドナー基板(1)の前記縁部(5)の前記ゾーンが、前記ドナー基板(1)の前記縁部の面取りゾーン(7)を含むか又はそれに限定される、請求項1又は2に記載のプロセス。
- 前記基板(1)の前記縁部(5)の前記ゾーンの幅が、1mm〜5mmで構成され、特に、1mm〜2mmで構成される、請求項1〜3の少なくとも1項に記載のプロセス。
- 前記注入(17)が、マスク(43)を使用して、前記ドナー基板(1)の前記縁部(5)の前記ゾーンの上又は上方で実行される、請求項1〜4の少なくとも1項に記載のプロセス。
- 前記注入(17)が、前記ドナー基板(1)の前記縁部(5)の前記ゾーンに向けた注入量が前記ドナー基板(1)の前記中央ゾーン(9)の注入量より少ないように、特に、前記注入(17)が前記ドナー基板(1)の前記中央ゾーン(9)に限定されるように、前記ドナー基板をイオンビームで走査することによって実行される、請求項1〜5の少なくとも1項に記載のプロセス。
- 前記注入(17)が、ヘリウムイオン(He)の注入、又は、ヘリウムイオン及び水素イオン(He−H)の同時注入、を含む、ことを特徴とする請求項1〜6の少なくとも1項に記載のプロセス。
- 特に、前記第1の注入ステップより少ない注入量で前記ドナー基板(1)の面全体の上に実行される、第2の原子及び/又はイオン注入ステップ(17)を含む、ことを特徴とする請求項1〜7の少なくとも1項に記載のプロセス。
- 前記第1の注入ステップ(17)が、ヘリウムイオンの注入であり、前記第2の注入ステップ(17)が、水素イオンの注入である、請求項8に記載のプロセス。
- 前記ドナー基板の前記縁部(5)の前記ゾーンの前記注入量(25)が、1e16at/cm2より少なく、特に、0.5e16at/cm2〜1e16at/cm2で構成される、請求項1〜9の少なくとも1項に記載のプロセス。
- キャリア基板上に層を移転するプロセスのためのドナー基板であって、所定の分離ゾーン(19)を含み、前記ドナー基板の前記縁部(5)のゾーンの前記注入量(25)が、特に、請求項1〜10の少なくとも1項に記載の前記プロセスによって生産される、前記ドナー基板の中央ゾーン(9)の注入量(27)より少ない、ドナー基板。
- キャリア基板上にドナー基板の層を移転するプロセスであって、
(a)請求項11に係るドナー基板(1)をキャリア基板(11)に取着するステップと、
(b)前記ドナー基板の残部(23)を前記キャリア基板(11)に移転された前記層(21)から脱離するために、所定の分離ゾーン(19)の部位で脱離作業を実行するステップと、を含む、プロセス。 - ステップ(b)が、熱アニールステップを含む、請求項12に記載のプロセス。
- 注入領域をドナー基板(1)、特に、請求項11に記載のドナー基板、の前記縁部(5)のゾーンに限定するためのデバイスにおいて、前記デバイスが、前記ドナー基板(1)の前記縁部(5)のゾーンに向けた前記注入量(25)が前記ドナー基板(1)の中央ゾーン(9)の前記注入量(27)より少ないように、前記注入(17)を実行するのに適した手段を含む、ことを特徴とするデバイス。
- 前記注入領域を前記ドナー基板(1)の前記中央ゾーン(9)に限定するための前記手段が、マスク(43)を含むことがある、請求項14に記載のデバイス。
- 前記マスク(43)が、前記ドナー基板(1)の上又はその上方に位置決めされたリングである、請求項15に記載のデバイス。
- 前記マスク(43)が、ドナー基板(1)の前記縁部(5)の前記ゾーンを、1mm〜5mmで、特に、1〜2mmで構成される幅全体について、マスキングするように構成される、ことを特徴とする請求項14〜16の少なくとも1項に記載のデバイス。
- 請求項14〜17の少なくとも1項に記載のデバイスを含む、ドナー基板(1)にイオンを注入するためのイオン注入装置。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1751296 | 2017-02-17 | ||
FR1751296A FR3063176A1 (fr) | 2017-02-17 | 2017-02-17 | Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique |
PCT/EP2018/053755 WO2018149906A1 (en) | 2017-02-17 | 2018-02-15 | Masking a zone at the edge of a donor substrate during an ion implantation step |
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JP2020507916A true JP2020507916A (ja) | 2020-03-12 |
JP7206465B2 JP7206465B2 (ja) | 2023-01-18 |
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EP (1) | EP3583620B1 (ja) |
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KR (1) | KR102537290B1 (ja) |
CN (1) | CN110291626B (ja) |
FR (1) | FR3063176A1 (ja) |
TW (1) | TWI748057B (ja) |
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FR3091620B1 (fr) * | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture |
CN113812017A (zh) | 2019-09-24 | 2021-12-17 | 株式会社Lg新能源 | 具有图案的锂硫二次电池用正极、其制造方法以及包含所述正极的锂硫二次电池 |
FR3108440A1 (fr) | 2020-03-23 | 2021-09-24 | Soitec | Procédé de préparation d’une couche mince |
FR3121281B1 (fr) * | 2021-03-23 | 2023-11-24 | Soitec Silicon On Insulator | Procede de fabrication d’une structure composite comprenant une couche mince en semi-conducteur monocristallin sur un substrat support |
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CN110291626B (zh) | 2023-05-05 |
FR3063176A1 (fr) | 2018-08-24 |
US11189519B2 (en) | 2021-11-30 |
JP7206465B2 (ja) | 2023-01-18 |
KR20190117573A (ko) | 2019-10-16 |
EP3583620B1 (en) | 2024-05-29 |
CN110291626A (zh) | 2019-09-27 |
KR102537290B1 (ko) | 2023-05-30 |
TW201841302A (zh) | 2018-11-16 |
US20210143052A1 (en) | 2021-05-13 |
TWI748057B (zh) | 2021-12-01 |
EP3583620A1 (en) | 2019-12-25 |
WO2018149906A1 (en) | 2018-08-23 |
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