JP2020202250A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020202250A JP2020202250A JP2019107156A JP2019107156A JP2020202250A JP 2020202250 A JP2020202250 A JP 2020202250A JP 2019107156 A JP2019107156 A JP 2019107156A JP 2019107156 A JP2019107156 A JP 2019107156A JP 2020202250 A JP2020202250 A JP 2020202250A
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- electrode film
- region
- diode
- element region
- main surface
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- 239000000758 substrate Substances 0.000 description 22
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- 239000000969 carrier Substances 0.000 description 9
- 230000007935 neutral effect Effects 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- 239000012535 impurity Substances 0.000 description 4
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- 238000011069 regeneration method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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Abstract
Description
実施の形態1に係る半導体装置について説明する。ここでは、IGBT(TR)は、第1スイッチング素子に対応する。ダイオードDIは、第1ダイオード素子に対応する。
実施の形態2に係る半導体装置について説明する。図12に示すように、半導体装置SEDのRC−IGBTチップ1における半導体基板2の第1主面2aには、トランジスタ領域IRとダイオード領域DRとが規定されている。トランジスタ領域IRでは、IGBT(TR)が形成されている。エミッタ層15に接触するように、エミッタ電極膜17が形成されている。ダイオード領域DRに、ダイオードDIが形成されている。アノード層5に接触するように、アノード電極膜21が形成されている。
実施の形態3に係る半導体装置について説明する。ここでは、インバータ回路では、IGBT(TR)は、第1スイッチング素子第1部と第1スイッチング素子第2部とに対応する。コンバータ回路では、ダイオードDIが、第1ダイオード素子第1部と第1ダイオード素子第2部とに対応する。
実施の形態4に係る半導体装置について説明する。図13に示すように、半導体装置SEDのRC−IGBTチップ1における半導体基板2の第1主面2aには、トランジスタ領域IRとダイオード領域DRとが規定されている。トランジスタ領域IRおよびダイオード領域DRを取り囲むように、ガードリング領域33が形成されている。ガードリング領域33は、RC−IGBTチップ1の外周に沿って形成されている。
実施の形態5に係る半導体装置について説明する。ここでは、IGBT(TR)は、第1スイッチング素子第3部と第1スイッチング素子第4部とに対応する。ダイオードDIは、第1ダイオード素子第3部と第1ダイオード素子第4部とに対応する。
実施の形態6に係る半導体装置について説明する。ここでは、IGBT(TR)が、第1スイッチング素子第5部と第1スイッチング素子第6部とに対応する。ダイオードDIは、第1ダイオード素子第5部と第1ダイオード素子第6部とに対応する。
実施の形態7に係る半導体装置について説明する。
実施の形態8に係る半導体装置について説明する。ここでは、第1RC−IGBTチップのIGBT(TR)が第1スイッチング素子に対応し、ダイオードDIが第1ダイオード素子に対応する。第2RC−IGBTチップのIGBT(TR)が第2スイッチング素子に対応し、ダイオードDIが第2ダイオード素子に対応する。
実施の形態9に係る半導体装置について説明する。ここでは、第1RC−IGBTチップのIGBT(TR)が第1スイッチング素子に対応し、ダイオードDIが第1ダイオード素子に対応する。第2RC−IGBTチップのIGBT(TR)が第2スイッチング素子に対応し、ダイオードDIが第2ダイオード素子に対応する。
実施の形態10に係る半導体装置について説明する。
実施の形態11に係る半導体装置について説明する。ここでは、エミッタ電極膜とアノード電極膜とが一体化されて、ワイヤの接続の仕方に特徴がある半導体装置の第1例について説明する。IGBT(TR)はスイッチング素子に対応し、ダイオードDIはダイオード素子に対応する。
実施の形態12に係る半導体装置について説明する。ここでは、ワイヤの接続の仕方のバリエーションの一例について説明する。IGBT(TR)は、スイッチング素子第1部とスイッチング素子第2部とに対応する。ダイオードDIは、ダイオード素子第1部とダイオード素子第2部とに対応する。
実施の形態13に係る半導体装置について説明する。ここでは、ワイヤの接続の仕方のバリエーションの他の例について説明する。IGBT(TR)は、スイッチング素子第3部とスイッチング素子第4部とに対応する。ダイオードDIは、ダイオード素子第3部とダイオード素子第4部とに対応する。
実施の形態14に係る半導体装置について説明する。ここでは、エミッタ・アノード電極膜における所望の位置にワイヤを接続することができる半導体装置について説明する。
Claims (18)
- 対向する第1主面および第2主面を有し、前記第1主面に規定された第1素子領域に第1スイッチング素子が形成され、前記第1主面に規定された第2素子領域に第1ダイオード素子が形成された第1半導体チップを含む、半導体チップ部を有し、
前記第1スイッチング素子は、
前記第1主面側に形成された第1エミッタ層と、
前記第2主面側に形成された第1コレクタ層と、
前記第1主面側に形成された第1ゲート電極と、
前記第1エミッタ層に接触するように形成された第1電極膜と
を含み、
前記第1ダイオード素子は、
前記第1主面側に形成された第1アノード層と、
前記第2主面側に形成された第1カソード層と、
前記第1アノード層に接触するように形成された第2電極膜と
を含み、
前記第1スイッチング素子における前記第1電極膜と、前記第1ダイオード素子における前記第2電極膜とは、距離を隔てられており、
前記第1電極膜と前記第2電極膜とを電気的に接続する部分を含む、インピーダンスを有する配線導体を備えた、半導体装置。 - 前記第1電極膜と前記第2電極膜とは、前記距離を隔てられた前記第1電極膜と前記第2電極膜との間に位置する部分のパターンが屈曲する部分を有する態様で形成された、請求項1記載の半導体装置。
- 前記第1素子領域および前記第2素子領域を取り囲むように、前記第1半導体チップのの外周に沿って形成されたガードリング領域を備え、
前記ガードリング領域は、第1方向にそれぞれ延在するとともに、前記第1方向と交差する第2方向に距離を隔てて対向する第1外周部および第2外周部を含み、
前記第1素子領域は、第1素子領域第1部と第1素子領域第2部とを含み、
前記第1素子領域第1部には、前記第1スイッチング素子としての第1スイッチング素子第1部が形成され、
前記第1素子領域第2部には、前記第1スイッチング素子としての第1スイッチング素子第2部が形成され、
前記第1スイッチング素子第1部は、前記第1電極膜としての第1電極膜第1部を含み、
前記第1スイッチング素子第2部は、前記第1電極膜としての第1電極膜第2部を含み、
前記第1電極膜第1部は、前記第1方向に沿って前記第1外周部に対向するように配置され、
前記第1電極膜第2部は、前記第1方向に沿って前記第2外周部に対向するように配置され、
前記第1電極膜第1部と前記第1電極膜第2部との間に、前記第2電極膜が配置された、請求項1記載の半導体装置。 - 前記第1外周部の前記第1方向の長さを第1長さとし、
前記第1電極膜第1部の前記第1方向の長さを第2長さとすると、
前記第2長さは、前記第1長さの3分の2以上に設定された、請求項3記載の半導体装置。 - 前記第1素子領域および前記第2素子領域を取り囲むように、前記第1半導体チップのの外周に沿って形成されたガードリング領域を備え、
前記ガードリング領域は、第1方向にそれぞれ延在するとともに、前記第1方向と交差する第2方向に距離を隔てて対向する第1外周部および第2外周部を含み、
前記第2素子領域は、第2素子領域第1部と第2素子領域第2部とを含み、
前記第2素子領域第1部には、前記第1ダイオード素子としての第1ダイオード素子第1部が形成され、
前記第2素子領域第2部には、前記第1ダイオード素子としての第1ダイオード素子第2部が形成され、
前記第1ダイオード素子第1部は、前記第2電極膜としての第2電極膜第1部を含み、
前記第1ダイオード素子第2部は、前記第2電極膜としての第2電極膜第2部を含み、
前記第2電極膜第1部は、前記第1方向に沿って前記第1外周部に対向するように配置され、
前記第2電極膜第2部は、前記第1方向に沿って前記第2外周部に対向するように配置され、
前記第2電極膜第1部と前記第2電極膜第2部との間に、前記第1電極膜が配置された、請求項1記載の半導体装置。 - 前記第1素子領域および前記第2素子領域を取り囲むように、前記第1半導体チップのの外周に沿って形成されたガードリング領域を備え、
前記第2電極膜は前記ガードリング領域には対向しておらず、
前記第1電極膜が前記ガードリング領域に対向している、請求項1記載の半導体装置。 - 前記第1素子領域および前記第2素子領域を取り囲むように、前記第1半導体チップのの外周に沿って形成されたガードリング領域を備え、
前記第1素子領域は、第1素子領域第3部と第1素子領域第4部とを含み、
前記第1素子領域第3部には、前記第1スイッチング素子としての第1スイッチング素子第3部が形成され、
前記第1素子領域第4部には、前記第1スイッチング素子としての第1スイッチング素子第4部が形成され、
前記第1スイッチング素子第3部は、前記第1電極膜としての第1電極膜第3部を含み、
前記第1スイッチング素子第4部は、前記第1電極膜としての第1電極膜第4部を含み、
前記第1電極膜第3部が、前記ガードリング領域と対向している部分の長さを第1長さとし、
前記第1電極膜第4部が、前記ガードリング領域と対向している部分の長さを第2長さとすると、
前記第1長さは前記第2長さよりも長く、
前記第1電極膜第3部の面積は、前記第1電極膜第4部の面積よりも大きく設定された、請求項1記載の半導体装置。 - 前記第1素子領域および前記第2素子領域を取り囲むように、前記第1半導体チップのの外周に沿って形成されたガードリング領域を備え、
前記第2素子領域は、第2素子領域第3部と第2素子領域第4部とを含み、
前記第2素子領域第3部には、前記第1ダイオード素子としての第1ダイオード素子第3部が形成され、
前記第2素子領域第4部には、前記第1ダイオード素子としての第1ダイオード素子第4部が形成され、
前記第1ダイオード素子第3部は、前記第2電極膜としての第2電極膜第3部を含み、
前記第1ダイオード素子第4部は、前記第2電極膜としての第2電極膜第4部を含み、
前記第2電極膜第3部が、前記ガードリング領域と対向している部分の長さを第3長さとし、
前記第2電極膜第4部が、前記ガードリング領域と対向している部分の長さを第4長さとすると、
前記第3長さは前記第4長さよりも長く、
前記第2電極膜第3部の面積は、前記第2電極膜第4部の面積よりも大きく設定された、請求項1記載の半導体装置。 - 前記第1素子領域は、第1素子領域第5部と第1素子領域第6部とを含み、
前記第1素子領域第5部には、前記第1スイッチング素子としての第1スイッチング素子第5部が形成され、
前記第1素子領域第6部には、前記第1スイッチング素子としての第1スイッチング素子第6部が形成され、
前記第1スイッチング素子第5部は、前記第1電極膜としての第1電極膜第5部を含み、
前記第1スイッチング素子第6部は、前記第1電極膜としての第1電極膜第6部を含み、
前記第2素子領域は、第2素子領域第5部と第2素子領域第6部とを含み、
前記第2素子領域第5部には、前記第1ダイオード素子としての第1ダイオード素子第5部が形成され、
前記第2素子領域第6部には、前記第1ダイオード素子としての第1ダイオード素子第6部が形成され、
前記第1ダイオード素子第5部は、前記第2電極膜としての第2電極膜第5部を含み、
前記第1ダイオード素子第6部は、前記第2電極膜としての第2電極膜第6部を含み、
前記第1電極膜第5部、前記第1電極膜第6部、前記第2電極膜第5部および前記第2電極膜第6部は、第1方向にそれぞれ延在するとともに、前記第1方向と交差する第2方向に沿って配置され、
前記配線導体は、
第1外部配線と、
前記第2方向に沿って、前記第1電極膜第5部、前記第1電極膜第6部および前記第1外部配線を電気的に接続する第1ワイヤと、
前記第2方向に沿って、前記第2電極膜第5部、前記第2電極膜第6部および前記第1外部配線を電気的に接続する第2ワイヤと
を含む、請求項1記載の半導体装置。 - 前記第1外部配線は、
第1外部配線第1部と、
第1外部配線第2部と、
前記第1外部配線第1部と前記第1外部配線第2部とを繋ぐ繋ぎ部と
を含み、
前記第1ワイヤは前記第1外部配線第1部に接続され、
前記第2ワイヤは前記第1外部配線第2部に接続された、請求項9記載の半導体装置。 - 前記第1外部配線第1部と前記第1外部配線第2部との間にセンス抵抗が接続された、請求項10記載の半導体装置。
- 前記半導体チップ部は、対向する第3主面および第4主面を有し、前記第3主面に規定された第3素子領域に第2スイッチング素子が形成され、前記第3主面に規定された第4素子領域に第2ダイオード素子が形成された第2半導体チップを含み、
前記第2スイッチング素子は、
前記第3主面側に形成された第2エミッタ層と、
前記第4主面側に形成された第2コレクタ層と、
前記第3主面側に形成された第2ゲート電極と、
前記第2エミッタ層に接触するように形成された第3電極膜と
を含み、
前記第2ダイオード素子は、
前記第3主面側に形成された第2アノード層と、
前記第4主面側に形成された第2カソード層と、
前記第2アノード層に接触するように形成された第4電極膜と
を含み、
前記第2スイッチング素子における前記第3電極膜と、前記第2ダイオード素子における前記第4電極膜とは、距離を隔てられており、
前記第1コレクタ層、前記第1カソード層、前記第2コレクタ層および前記第2カソード層は電気的に接続されており、
前記配線導体は、第3ワイヤ、第4ワイヤおよび第2外部配線を含み、
前記第3ワイヤは、前記第1スイッチング素子の前記第1電極膜と、前記第2ダイオード素子の前記第4電極膜と、前記第2外部配線とを電気的に接続し、
前記第4ワイヤは、前記第1ダイオード素子の前記第2電極膜と、前記第2スイッチング素子の前記第3電極膜と、前記第2外部配線とを電気的に接続する、請求項1記載の半導体装置。 - 対向する第1主面および第2主面を有し、前記第1主面に規定された第1素子領域に第1スイッチング素子が形成され、前記第1主面に規定された第2素子領域に第1ダイオード素子が形成された第1半導体チップと、
対向する第3主面および第4主面を有し、前記第3主面に規定された第3素子領域に第2スイッチング素子が形成され、前記第3主面に規定された第4素子領域に第2ダイオード素子が形成された第2半導体チップと
を含む、半導体チップ部を有し、
前記第1スイッチング素子は、
前記第1主面側に形成された第1エミッタ層と、
前記第2主面側に形成された第1コレクタ層と、
前記第1主面側に形成された第1ゲート電極と、
前記第1エミッタ層に接触するように形成された第1電極膜と
を含み、
前記第1ダイオード素子は、
前記第1主面側に形成された第1アノード層と、
前記第2主面側に形成された第1カソード層と、
前記第1アノード層に接触するように形成された第2電極膜と
を含み、
前記第2スイッチング素子は、
前記第3主面側に形成された第2エミッタ層と、
前記第4主面側に形成された第2コレクタ層と、
前記第3主面側に形成された第2ゲート電極と、
前記第2エミッタ層に接触するように形成された第3電極膜と
を含み、
前記第2ダイオード素子は、
前記第3主面側に形成された第2アノード層と、
前記第4主面側に形成された第2カソード層と、
前記第2アノード層に接触するように形成された第4電極膜と
を含み、
前記第1スイッチング素子における前記第1電極膜と、前記第1ダイオード素子における前記第2電極膜とは、距離を隔てられており、
前記第2スイッチング素子における前記第3電極膜と、前記第2ダイオード素子における前記第4電極膜とは、距離を隔てられており、
前記第1コレクタ層と前記第1カソード層とは電気的に接続されており、
前記第2コレクタ層と前記第2カソード層とは電気的に接続されており、
前記第1スイッチング素子の前記第1電極膜と、前記第2ダイオード素子の前記第4電極膜とを電気的に接続する第1ワイヤと、
前記第1ダイオード素子の前記第2電極膜と、前記第2スイッチング素子の前記第3電極膜とを電気的に接続する第2ワイヤと
を含む配線導体を備えた、半導体装置。 - 対向する第1主面および第2主面を有し、前記第1主面に規定された第1素子領域にスイッチング素子が形成され、前記第1主面に規定された第2素子領域にダイオード素子が形成された半導体チップを有し、
前記スイッチング素子は、
前記第1主面側に形成されたエミッタ層と、
前記第2主面側に形成されたコレクタ層と、
前記第1主面側に形成されたゲート電極と
を含み、
前記ダイオード素子は、
前記第1主面側に形成されたアノード層と、
前記第2主面側に形成されたカソード層と
を含み、
前記エミッタ層および前記アノード層に接触する態様で、前記第1主面を覆うように形成された電極膜と、
前記電極膜に電気的に接続された配線導体と
を備え、
前記配線導体は、前記第1素子領域と前記第2素子領域との境界の直上に位置する前記電極膜の部分から距離を隔てられた位置に接続された、半導体装置。 - 前記半導体チップは、前記アノード層と前記カソード層との間に形成され、第1厚さを有する第1導電型の半導体層を含み、
前記配線導体は、前記境界の直上に位置する前記電極膜の前記部分から、前記距離として、前記第1厚さに相当する距離よりも長い距離を隔てられた位置に接続された、請求項14記載の半導体装置。 - 前記第1素子領域は、第1素子領域第1部と第1素子領域第2部とを含み、
前記第1素子領域第1部には、前記スイッチング素子としてのスイッチング素子第1部が形成され、
前記第1素子領域第2部には、前記スイッチング素子としてのスイッチング素子第2部が形成され、
前記第2素子領域は、第2素子領域第1部と第2素子領域第2部とを含み、
前記第2素子領域第1部には、前記ダイオード素子としてのダイオード素子第1部が形成され、
前記第2素子領域第2部には、前記ダイオード素子としてのダイオード素子第2部が形成され、
前記第1素子領域第1部と前記第1素子領域第2部とは、距離を隔てて配置され、
前記第2素子領域第1部と前記第2素子領域第2部とは、距離を隔てて配置され、
前記配線導体は、
前記第1素子領域第1部の直上に位置する前記電極膜の第1部分と、前記第1素子領域第2部の直上に位置する前記電極膜の第2部分とを電気的に接続する第1ワイヤと、
前記第2素子領域第1部の直上に位置する前記電極膜の第3部分と、前記第2素子領域第2部の直上に位置する前記電極膜の第4部分とを電気的に接続する第2ワイヤと、
前記第1ワイヤと前記第2ワイヤとを電気的に接続する第1外部配線と
を含む、請求項14記載の半導体装置。 - 前記第1素子領域は、第1素子領域第3部と第1素子領域第4部とを含み、
前記第1素子領域第3部には、前記スイッチング素子としてのスイッチング素子第3部が形成され、
前記第1素子領域第4部には、前記スイッチング素子としてのスイッチング素子第4部が形成され、
前記第2素子領域は、第2素子領域第3部と第2素子領域第4部とを含み、
前記第2素子領域第3部には、前記ダイオード素子としてのダイオード素子第3部が形成され、
前記第2素子領域第4部には、前記ダイオード素子としてのダイオード素子第4部が形成され、
前記第1素子領域第3部と前記第1素子領域第4部とは、距離を隔てて配置され、
前記第2素子領域第3部と前記第2素子領域第4部とは、距離を隔てて配置され、
前記配線導体は、
前記第1素子領域第3部の直上に位置する前記電極膜の第5部分と、前記第2素子領域第3部の直上に位置する前記電極膜の第6部分とを電気的に接続する第3ワイヤと、
前記第1素子領域第4部の直上に位置する前記電極膜の第7部分と、前記第2素子領域第4部の直上に位置する前記電極膜の第8部分とを電気的に接続する第4ワイヤと、
前記第3ワイヤと前記第4ワイヤとを電気的に接続する第2外部配線と
を含む、請求項14記載の半導体装置。 - 前記第1主面を覆うように保護膜が形成され、
前記保護膜には、前記配線導体が接続される箇所に開口部が形成された、請求項14〜17のいずれか1項に記載の半導体装置。
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