JP2019532500A5 - - Google Patents

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JP2019532500A5
JP2019532500A5 JP2019512274A JP2019512274A JP2019532500A5 JP 2019532500 A5 JP2019532500 A5 JP 2019532500A5 JP 2019512274 A JP2019512274 A JP 2019512274A JP 2019512274 A JP2019512274 A JP 2019512274A JP 2019532500 A5 JP2019532500 A5 JP 2019532500A5
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deep level
nucleation layer
substrate
layer
level dopant
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JP2019512274A
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JP2019532500A (ja
JP7137557B2 (ja
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JP2019512274A 2016-09-02 2017-08-31 Ｉｉｉ族窒化物構造の成長のための核生成層 Active JP7137557B2 (ja)

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JP2022108303A JP2022137144A (ja) 2016-09-02 2022-07-05 Ｉｉｉ族窒化物構造の成長のための核生成層

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Application Number Priority Date Filing Date Title
US15/256,170 US9917156B1 (en) 2016-09-02 2016-09-02 Nucleation layer for growth of III-nitride structures
US15/256,170 2016-09-02
PCT/US2017/049783 WO2018045251A1 (en) 2016-09-02 2017-08-31 Nucleation layer for growth of iii-nitride structures

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JP2019532500A JP2019532500A (ja) 2019-11-07
JP2019532500A5 true JP2019532500A5 (enExample) 2020-10-08
JP7137557B2 JP7137557B2 (ja) 2022-09-14

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JP2019512274A Active JP7137557B2 (ja) 2016-09-02 2017-08-31 Ｉｉｉ族窒化物構造の成長のための核生成層
JP2022108303A Withdrawn JP2022137144A (ja) 2016-09-02 2022-07-05 Ｉｉｉ族窒化物構造の成長のための核生成層

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US (2) US9917156B1 (enExample)
EP (1) EP3507822A1 (enExample)
JP (2) JP7137557B2 (enExample)
CN (1) CN109964305B (enExample)
TW (1) TWI747944B (enExample)
WO (1) WO2018045251A1 (enExample)

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CN112750904B (zh) * 2019-10-30 2024-01-02 联华电子股份有限公司 具有应力松弛层的半导体元件
JP7577842B2 (ja) * 2020-09-30 2024-11-05 蘇州能訊高能半導体有限公司 半導体デバイスのエピタキシャル構造、その製造方法及び半導体デバイス
CN118140313A (zh) * 2021-10-28 2024-06-04 华为技术有限公司 集成电路、其制备方法、功率放大器及电子设备
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