JPS55141659A - Atom concentration measuring method of iron in silicon crystal - Google Patents

Atom concentration measuring method of iron in silicon crystal

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Publication number
JPS55141659A
JPS55141659A JP5003579A JP5003579A JPS55141659A JP S55141659 A JPS55141659 A JP S55141659A JP 5003579 A JP5003579 A JP 5003579A JP 5003579 A JP5003579 A JP 5003579A JP S55141659 A JPS55141659 A JP S55141659A
Authority
JP
Japan
Prior art keywords
crystal
iron
atom concentration
conductivity
silicon crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5003579A
Other languages
Japanese (ja)
Inventor
Akira Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5003579A priority Critical patent/JPS55141659A/en
Publication of JPS55141659A publication Critical patent/JPS55141659A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure the atom concentration of iron with ease from the differences in conductivity produced by fluctuating the position where iron atoms occupy in the crystal lattice of Si crystal.
CONSTITUTION: The conductivity of silicon crystal is beforehand measured, after which this crystal is heat-treated in the atmosphere of nitrogen or inert gas. Next, this crystal is quenched, after which the surface is etched, thence the conductivity of this crystal is again measured. By the heat treatment, the positions where iron atoms occupy in the crystal lattice of the silicon crystal are fluctuated and the atom concentration of iron is measured from the change in the conductivity of that time.
COPYRIGHT: (C)1980,JPO&Japio
JP5003579A 1979-04-23 1979-04-23 Atom concentration measuring method of iron in silicon crystal Pending JPS55141659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5003579A JPS55141659A (en) 1979-04-23 1979-04-23 Atom concentration measuring method of iron in silicon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5003579A JPS55141659A (en) 1979-04-23 1979-04-23 Atom concentration measuring method of iron in silicon crystal

Publications (1)

Publication Number Publication Date
JPS55141659A true JPS55141659A (en) 1980-11-05

Family

ID=12847736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5003579A Pending JPS55141659A (en) 1979-04-23 1979-04-23 Atom concentration measuring method of iron in silicon crystal

Country Status (1)

Country Link
JP (1) JPS55141659A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863842A (en) * 1981-10-13 1983-04-15 Akai Bussan Kk Discriminating method for steel kind of steel material
US4652812A (en) * 1984-11-27 1987-03-24 Harris Corporation One-sided ion migration velocity measurement and electromigration failure warning device
JP2019532500A (en) * 2016-09-02 2019-11-07 アイキューイー ピーエルシーＩＱＥ ｐｌｃ Nucleation layer for growth of III-nitride structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863842A (en) * 1981-10-13 1983-04-15 Akai Bussan Kk Discriminating method for steel kind of steel material
US4652812A (en) * 1984-11-27 1987-03-24 Harris Corporation One-sided ion migration velocity measurement and electromigration failure warning device
JP2019532500A (en) * 2016-09-02 2019-11-07 アイキューイー ピーエルシーＩＱＥ ｐｌｃ Nucleation layer for growth of III-nitride structures

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