JP2015512139A5 - - Google Patents
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- Publication number
- JP2015512139A5 JP2015512139A5 JP2014552262A JP2014552262A JP2015512139A5 JP 2015512139 A5 JP2015512139 A5 JP 2015512139A5 JP 2014552262 A JP2014552262 A JP 2014552262A JP 2014552262 A JP2014552262 A JP 2014552262A JP 2015512139 A5 JP2015512139 A5 JP 2015512139A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- group
- group iii
- silicon
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910021478 group 5 element Inorganic materials 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 239000000460 chlorine Substances 0.000 claims 2
- WMMGRPSGJRRNLN-UHFFFAOYSA-N 1-$l^{1}-phosphanylbutane Chemical group CCCC[P] WMMGRPSGJRRNLN-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- BMZAJIYVAAFBTR-UHFFFAOYSA-N butylarsenic Chemical group CCCC[As] BMZAJIYVAAFBTR-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical group CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical group CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims 1
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical group CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical group C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261586184P | 2012-01-13 | 2012-01-13 | |
| US61/586,184 | 2012-01-13 | ||
| US13/736,504 | 2013-01-08 | ||
| US13/736,504 US9299560B2 (en) | 2012-01-13 | 2013-01-08 | Methods for depositing group III-V layers on substrates |
| PCT/US2013/020804 WO2013106411A1 (en) | 2012-01-13 | 2013-01-09 | Methods for depositing group iii-v layers on substrates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015512139A JP2015512139A (ja) | 2015-04-23 |
| JP2015512139A5 true JP2015512139A5 (enExample) | 2016-03-17 |
| JP6109852B2 JP6109852B2 (ja) | 2017-04-05 |
Family
ID=48780254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014552262A Active JP6109852B2 (ja) | 2012-01-13 | 2013-01-09 | 基板上に第ｉｉｉ−ｖ族層を堆積させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9299560B2 (enExample) |
| JP (1) | JP6109852B2 (enExample) |
| KR (1) | KR101703017B1 (enExample) |
| CN (2) | CN107507763A (enExample) |
| TW (1) | TWI566277B (enExample) |
| WO (1) | WO2013106411A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8647439B2 (en) * | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
| GB201311101D0 (en) * | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
| US10118828B2 (en) * | 2015-10-02 | 2018-11-06 | Asm Ip Holding B.V. | Tritertbutyl aluminum reactants for vapor deposition |
| KR102528559B1 (ko) * | 2016-07-26 | 2023-05-04 | 삼성전자주식회사 | 대면적 기판 제조 장치 |
| JP6769486B2 (ja) | 2016-08-31 | 2020-10-14 | 富士通株式会社 | 半導体結晶基板の製造方法、赤外線検出装置の製造方法 |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| JP7099398B2 (ja) | 2019-04-18 | 2022-07-12 | 株式会社Sumco | 気相成長方法及び気相成長装置 |
| KR102737089B1 (ko) | 2020-07-03 | 2024-12-03 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (28)
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| JPS61265814A (ja) * | 1985-05-20 | 1986-11-25 | Nec Corp | 化合物半導体装置の製造方法 |
| JP2680310B2 (ja) * | 1987-06-30 | 1997-11-19 | 株式会社東芝 | 半導体素子の製造方法 |
| JPH0822800B2 (ja) * | 1989-02-21 | 1996-03-06 | 日本電気株式会社 | ▲ｉｉｉ▼―ｖ族化合物半導体薄膜の形成方法 |
| JP2760576B2 (ja) * | 1989-06-15 | 1998-06-04 | 株式会社東芝 | 半導体装置 |
| JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH0484418A (ja) * | 1990-07-27 | 1992-03-17 | Nec Corp | 異種基板上への３―ｖ族化合物半導体のヘテロエピタキシャル成長法 |
| EP0576566B1 (en) * | 1991-03-18 | 1999-05-26 | Trustees Of Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| JP3078927B2 (ja) * | 1992-06-29 | 2000-08-21 | 富士通株式会社 | 化合物半導体薄膜の成長方法 |
| JP3761918B2 (ja) * | 1994-09-13 | 2006-03-29 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH08167576A (ja) * | 1994-12-14 | 1996-06-25 | Fujitsu Ltd | ヘテロエピタキシャル半導体基板の形成方法、かかるヘテロエピタキシャル半導体基板を有する化合物半導体装置、およびその製造方法 |
| JP3349316B2 (ja) * | 1995-12-05 | 2002-11-25 | 古河電気工業株式会社 | エピタキシャル成長方法 |
| US6064078A (en) | 1998-05-22 | 2000-05-16 | Xerox Corporation | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
| JP2000164515A (ja) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | 化合物半導体基板およびその形成方法 |
| JP2000269142A (ja) * | 1999-03-17 | 2000-09-29 | Sony Corp | 窒化ガリウムエピタキシャル層の形成方法及び発光素子 |
| JP2000311903A (ja) * | 1999-04-27 | 2000-11-07 | Kyocera Corp | 化合物半導体基板およびその製造方法 |
| JP4514868B2 (ja) * | 1999-12-28 | 2010-07-28 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| DE10219223A1 (de) * | 2001-12-21 | 2003-07-17 | Aixtron Ag | Verfahren zum Abscheiden von III-V-Halbleiterschichten auf einem Nicht-III-V-Substrat |
| JP2006512748A (ja) * | 2001-12-21 | 2006-04-13 | アイクストロン、アーゲー | Ｉｉｉ−ｖ半導体皮膜を非ｉｉｉ−ｖ基板に沈積する方法 |
| JP2005109346A (ja) * | 2003-10-01 | 2005-04-21 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
| JP2007194337A (ja) * | 2006-01-18 | 2007-08-02 | Sony Corp | 半導体装置およびその製造方法 |
| EP2009148A4 (en) | 2006-03-20 | 2011-05-25 | Kanagawa Kagaku Gijutsu Akad | GROUP III-V NITRIDE LAYER AND MANUFACTURING METHOD THEREFOR |
| US7355254B2 (en) | 2006-06-30 | 2008-04-08 | Intel Corporation | Pinning layer for low resistivity N-type source drain ohmic contacts |
| US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| DE102009042349B4 (de) * | 2009-09-20 | 2011-06-16 | Otto-Von-Guericke-Universität Magdeburg | Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente |
| US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
| KR101643758B1 (ko) | 2009-11-23 | 2016-08-01 | 삼성전자주식회사 | 분자빔 에피탁시 방법을 이용한 카본 절연층 제조방법 및 이를 이용한 전계효과 트랜지스터 제조방법 |
| US8129205B2 (en) * | 2010-01-25 | 2012-03-06 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
| US8242540B2 (en) * | 2010-06-11 | 2012-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Epitaxial growth of III-V compound semiconductors on silicon surfaces |
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2013
- 2013-01-08 US US13/736,504 patent/US9299560B2/en not_active Expired - Fee Related
- 2013-01-09 WO PCT/US2013/020804 patent/WO2013106411A1/en not_active Ceased
- 2013-01-09 KR KR1020147022670A patent/KR101703017B1/ko active Active
- 2013-01-09 CN CN201710569349.0A patent/CN107507763A/zh active Pending
- 2013-01-09 CN CN201380004957.7A patent/CN104040706B/zh active Active
- 2013-01-09 JP JP2014552262A patent/JP6109852B2/ja active Active
- 2013-01-10 TW TW102100950A patent/TWI566277B/zh active