JP2015512139A - 基板上に第iii−v族層を堆積させる方法 - Google Patents
基板上に第iii−v族層を堆積させる方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000000151 deposition Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- WMMGRPSGJRRNLN-UHFFFAOYSA-N 1-$l^{1}-phosphanylbutane Chemical group CCCC[P] WMMGRPSGJRRNLN-UHFFFAOYSA-N 0.000 claims description 2
- BMZAJIYVAAFBTR-UHFFFAOYSA-N butylarsenic Chemical group CCCC[As] BMZAJIYVAAFBTR-UHFFFAOYSA-N 0.000 claims description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical group Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical group Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical group CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical group CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims description 2
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical group CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 claims description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 2
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical group C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- 238000004140 cleaning Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 150000005309 metal halides Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004401 flow injection analysis Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
Claims (13)
- 基板上に第III−V族層を堆積させる方法であって、
摂氏約300度〜約400度の範囲の第1の温度で、<111>方向に配向させたシリコン含有表面上に、第1の第III族元素または第1の第V族元素の少なくとも1つを含む第1の層を堆積させることと、
摂氏約300度〜約600度の範囲の第2の温度で、前記第1の層の上に、第2の第III族元素および第2の第V族元素を含む第2の層を堆積させることとを含む方法。 - 前記第1の第III族元素が、前記第2の第III族元素と同じである、請求項1に記載の方法。
- 前記第1の第V族元素が、前記第2の第V族元素と同じである、請求項1に記載の方法。
- 前記<111>方向を有する前記シリコン含有表面に到達するまで、前記<111>方向以外の方向に配向させた表面を有するシリコン含有基板をエッチングすること
をさらに含む、請求項1から3のいずれか一項に記載の方法。 - 前記シリコン含有基板内のソース/ドレイン領域をエッチング除去するため、前記<111>方向以外の方向に配向させた表面を有するシリコン含有基板をエッチングすることと、
前記エッチング除去したソース/ドレイン領域内に前記<111>方向を有する前記シリコン含有表面を成長させることと
をさらに含む、請求項1から3のいずれか一項に記載の方法。 - 前記第2の層が、第3の第III族元素または第3の第V族元素の少なくとも1つをさらに含む、請求項1から3のいずれか一項に記載の方法。
- 前記第2の層が、2元または3元の第III−V族材料の1つを含む、請求項1から3のいずれか一項に記載の方法。
- 前記第1および第2の第V族元素が、ヒ化物またはリン化物の少なくとも1つを含む、請求項1から3のいずれか一項に記載の方法。
- 前記第2の層のうち、前記シリコン含有表面に隣接して配置された誘電体層の第2の表面上に堆積させた部分を選択的に除去するように、前記第2の層をエッチングすること
をさらに含む、請求項1から3のいずれか一項に記載の方法。 - 前記第2の層の堆積と前記第2の層のエッチングが、同時に実行される、請求項9に記載の方法。
- 前記第2の層が、塩素(Cl)または臭素(Br)の少なくとも1つを含むエッチング液を使用してエッチングされる、請求項9に記載の方法。
- 前記第III族および第V族のソース材料が、第3級ブチルリン、第3級ブチルヒ素、トリエチルアンチモン、トリメチルアンチモン、トリエチルガリウム、トリメチルガリウム、トリエチルインジウム、トリメチルインジウム、塩化インジウム、塩化ガリウム、またはトリメチルアルミニウムの1つまたは複数を含む、請求項1から3のいずれか一項に記載の方法。
- 実行されると、請求項1から12のいずれか一項に記載の方法であって、基板上に第III−V族層を堆積させる方法を、1つまたは複数のプロセスチャンバ内で実行させる命令が記憶されたコンピュータ可読媒体。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261586184P | 2012-01-13 | 2012-01-13 | |
US61/586,184 | 2012-01-13 | ||
US13/736,504 | 2013-01-08 | ||
US13/736,504 US9299560B2 (en) | 2012-01-13 | 2013-01-08 | Methods for depositing group III-V layers on substrates |
PCT/US2013/020804 WO2013106411A1 (en) | 2012-01-13 | 2013-01-09 | Methods for depositing group iii-v layers on substrates |
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JP2015512139A true JP2015512139A (ja) | 2015-04-23 |
JP2015512139A5 JP2015512139A5 (ja) | 2016-03-17 |
JP6109852B2 JP6109852B2 (ja) | 2017-04-05 |
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US (1) | US9299560B2 (ja) |
JP (1) | JP6109852B2 (ja) |
KR (1) | KR101703017B1 (ja) |
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Cited By (2)
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WO2020213236A1 (ja) * | 2019-04-18 | 2020-10-22 | 株式会社Sumco | 気相成長方法及び気相成長装置 |
US10937647B2 (en) | 2016-08-31 | 2021-03-02 | Fujitsu Limited | Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate |
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US8647439B2 (en) * | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
GB201311101D0 (en) * | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
US10118828B2 (en) * | 2015-10-02 | 2018-11-06 | Asm Ip Holding B.V. | Tritertbutyl aluminum reactants for vapor deposition |
KR102528559B1 (ko) * | 2016-07-26 | 2023-05-04 | 삼성전자주식회사 | 대면적 기판 제조 장치 |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
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Cited By (5)
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US10937647B2 (en) | 2016-08-31 | 2021-03-02 | Fujitsu Limited | Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate |
US11152210B2 (en) | 2016-08-31 | 2021-10-19 | Fujitsu Limited | Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate |
WO2020213236A1 (ja) * | 2019-04-18 | 2020-10-22 | 株式会社Sumco | 気相成長方法及び気相成長装置 |
JP2020178029A (ja) * | 2019-04-18 | 2020-10-29 | 株式会社Sumco | 気相成長方法及び気相成長装置 |
JP7099398B2 (ja) | 2019-04-18 | 2022-07-12 | 株式会社Sumco | 気相成長方法及び気相成長装置 |
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JP6109852B2 (ja) | 2017-04-05 |
CN104040706A (zh) | 2014-09-10 |
US20130183815A1 (en) | 2013-07-18 |
US9299560B2 (en) | 2016-03-29 |
KR20140113724A (ko) | 2014-09-24 |
CN107507763A (zh) | 2017-12-22 |
TWI566277B (zh) | 2017-01-11 |
CN104040706B (zh) | 2017-08-08 |
WO2013106411A1 (en) | 2013-07-18 |
KR101703017B1 (ko) | 2017-02-06 |
TW201331989A (zh) | 2013-08-01 |
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