JP2014112681A5 - - Google Patents

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Publication number
JP2014112681A5
JP2014112681A5 JP2013251335A JP2013251335A JP2014112681A5 JP 2014112681 A5 JP2014112681 A5 JP 2014112681A5 JP 2013251335 A JP2013251335 A JP 2013251335A JP 2013251335 A JP2013251335 A JP 2013251335A JP 2014112681 A5 JP2014112681 A5 JP 2014112681A5
Authority
JP
Japan
Prior art keywords
silane
compound
chloro
dichloro
germyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013251335A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014112681A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2014112681A publication Critical patent/JP2014112681A/ja
Publication of JP2014112681A5 publication Critical patent/JP2014112681A5/ja
Pending legal-status Critical Current

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JP2013251335A 2007-04-02 2013-12-04 ハロシリルゲルマンの新規な製造方法および使用方法 Pending JP2014112681A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90950507P 2007-04-02 2007-04-02
US60/909,505 2007-04-02

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2010502252A Division JP5638387B2 (ja) 2007-04-02 2008-04-02 ハロシリルゲルマンの新規な製造方法および使用方法

Publications (2)

Publication Number Publication Date
JP2014112681A JP2014112681A (ja) 2014-06-19
JP2014112681A5 true JP2014112681A5 (enExample) 2014-07-31

Family

ID=40226734

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010502252A Expired - Fee Related JP5638387B2 (ja) 2007-04-02 2008-04-02 ハロシリルゲルマンの新規な製造方法および使用方法
JP2013251335A Pending JP2014112681A (ja) 2007-04-02 2013-12-04 ハロシリルゲルマンの新規な製造方法および使用方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2010502252A Expired - Fee Related JP5638387B2 (ja) 2007-04-02 2008-04-02 ハロシリルゲルマンの新規な製造方法および使用方法

Country Status (7)

Country Link
US (1) US8043980B2 (enExample)
EP (1) EP2139680A4 (enExample)
JP (2) JP5638387B2 (enExample)
KR (1) KR101501700B1 (enExample)
CN (1) CN101678665B (enExample)
TW (1) TWI370107B (enExample)
WO (1) WO2009005862A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1019439A3 (fr) * 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
US8945418B2 (en) * 2011-11-16 2015-02-03 The United States Of America, As Represented By The Secretary Of The Navy Melt stabilization and vapor-phase synthesis of cesium germanium halides
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9299566B2 (en) * 2014-02-25 2016-03-29 Tsinghua University Method for forming germanium-based layer
CN104362298B (zh) * 2014-12-03 2018-11-06 京东方科技集团股份有限公司 一种电极片及其制备方法、储能装置
WO2018084878A1 (en) * 2016-11-03 2018-05-11 Intel Corporation Quantum dot devices
EP3413334B1 (de) * 2017-06-01 2020-09-09 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
EP3653577B1 (de) * 2018-11-14 2021-10-06 Evonik Operations GmbH Tris(trichlorsilyl)dichlorogallylgerman, verfahren zu dessen herstellung und dessen verwendung
DE102020114994A1 (de) 2020-06-05 2021-12-09 Johann Wolfgang Goethe-Universität Frankfurt am Main Stiftung des öffentlichen Rechts Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers
CN114890385B (zh) * 2021-07-01 2023-09-08 中国科学院上海硅酸盐研究所 一种高效抗氧化二维氢锗烯纳米片及其制备方法和应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1204724A (fr) * 1957-07-17 1960-01-27 Kali Chemie Ag Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 有機金属化合物
US7589003B2 (en) * 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
EP1807556A4 (en) 2004-09-14 2011-03-02 Univ Arizona METHOD OF PULLING SI-GE SEMICONDUCTOR MATERIALS AND COMPONENTS ON SUBSTRATES
US7981392B2 (en) 2004-09-14 2011-07-19 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Hydride compounds with silicon and germanium core atoms and method of synthesizing same
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply

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