JP2014112681A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014112681A5 JP2014112681A5 JP2013251335A JP2013251335A JP2014112681A5 JP 2014112681 A5 JP2014112681 A5 JP 2014112681A5 JP 2013251335 A JP2013251335 A JP 2013251335A JP 2013251335 A JP2013251335 A JP 2013251335A JP 2014112681 A5 JP2014112681 A5 JP 2014112681A5
- Authority
- JP
- Japan
- Prior art keywords
- silane
- compound
- chloro
- dichloro
- germyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90950507P | 2007-04-02 | 2007-04-02 | |
| US60/909,505 | 2007-04-02 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010502252A Division JP5638387B2 (ja) | 2007-04-02 | 2008-04-02 | ハロシリルゲルマンの新規な製造方法および使用方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014112681A JP2014112681A (ja) | 2014-06-19 |
| JP2014112681A5 true JP2014112681A5 (enExample) | 2014-07-31 |
Family
ID=40226734
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010502252A Expired - Fee Related JP5638387B2 (ja) | 2007-04-02 | 2008-04-02 | ハロシリルゲルマンの新規な製造方法および使用方法 |
| JP2013251335A Pending JP2014112681A (ja) | 2007-04-02 | 2013-12-04 | ハロシリルゲルマンの新規な製造方法および使用方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010502252A Expired - Fee Related JP5638387B2 (ja) | 2007-04-02 | 2008-04-02 | ハロシリルゲルマンの新規な製造方法および使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8043980B2 (enExample) |
| EP (1) | EP2139680A4 (enExample) |
| JP (2) | JP5638387B2 (enExample) |
| KR (1) | KR101501700B1 (enExample) |
| CN (1) | CN101678665B (enExample) |
| TW (1) | TWI370107B (enExample) |
| WO (1) | WO2009005862A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1019439A3 (fr) * | 2010-07-30 | 2012-07-03 | Diarotech | Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede. |
| US8945418B2 (en) * | 2011-11-16 | 2015-02-03 | The United States Of America, As Represented By The Secretary Of The Navy | Melt stabilization and vapor-phase synthesis of cesium germanium halides |
| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
| US9299566B2 (en) * | 2014-02-25 | 2016-03-29 | Tsinghua University | Method for forming germanium-based layer |
| CN104362298B (zh) * | 2014-12-03 | 2018-11-06 | 京东方科技集团股份有限公司 | 一种电极片及其制备方法、储能装置 |
| WO2018084878A1 (en) * | 2016-11-03 | 2018-05-11 | Intel Corporation | Quantum dot devices |
| EP3413334B1 (de) * | 2017-06-01 | 2020-09-09 | Evonik Operations GmbH | Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung |
| EP3653577B1 (de) * | 2018-11-14 | 2021-10-06 | Evonik Operations GmbH | Tris(trichlorsilyl)dichlorogallylgerman, verfahren zu dessen herstellung und dessen verwendung |
| DE102020114994A1 (de) | 2020-06-05 | 2021-12-09 | Johann Wolfgang Goethe-Universität Frankfurt am Main Stiftung des öffentlichen Rechts | Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers |
| CN114890385B (zh) * | 2021-07-01 | 2023-09-08 | 中国科学院上海硅酸盐研究所 | 一种高效抗氧化二维氢锗烯纳米片及其制备方法和应用 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1204724A (fr) * | 1957-07-17 | 1960-01-27 | Kali Chemie Ag | Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique |
| US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
| US4777023A (en) * | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
| US4690830A (en) * | 1986-02-18 | 1987-09-01 | Solarex Corporation | Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| US7594967B2 (en) * | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
| JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
| US7589003B2 (en) * | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
| EP1807556A4 (en) | 2004-09-14 | 2011-03-02 | Univ Arizona | METHOD OF PULLING SI-GE SEMICONDUCTOR MATERIALS AND COMPONENTS ON SUBSTRATES |
| US7981392B2 (en) | 2004-09-14 | 2011-07-19 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Hydride compounds with silicon and germanium core atoms and method of synthesizing same |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
-
2008
- 2008-04-02 CN CN2008800171455A patent/CN101678665B/zh not_active Expired - Fee Related
- 2008-04-02 KR KR1020097022759A patent/KR101501700B1/ko not_active Expired - Fee Related
- 2008-04-02 TW TW097112443A patent/TWI370107B/zh not_active IP Right Cessation
- 2008-04-02 EP EP08826083A patent/EP2139680A4/en not_active Withdrawn
- 2008-04-02 US US12/594,250 patent/US8043980B2/en not_active Expired - Fee Related
- 2008-04-02 JP JP2010502252A patent/JP5638387B2/ja not_active Expired - Fee Related
- 2008-04-02 WO PCT/US2008/059095 patent/WO2009005862A2/en not_active Ceased
-
2013
- 2013-12-04 JP JP2013251335A patent/JP2014112681A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014112681A5 (enExample) | ||
| JP2010523458A5 (enExample) | ||
| JP2014074236A5 (enExample) | ||
| CN109216158B (zh) | 形成硅锗锡层的方法和相关的半导体器件结构 | |
| JP2015026849A5 (enExample) | ||
| KR102544300B1 (ko) | 실리콘 게르마늄 주석 필름들을 형성하는 방법들 및 필름들을 포함하는 구조체들 및 디바이스들 | |
| JP2009533546A5 (enExample) | ||
| TWI692545B (zh) | 形成高p型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置 | |
| TWI741121B (zh) | 用於選擇性磊晶之方法及設備 | |
| JP2009545884A5 (enExample) | ||
| CN106029679B (zh) | 新环二硅氮烷衍生物、其制备方法以及使用其的含硅薄膜 | |
| JP2008530784A5 (enExample) | ||
| JP2015146461A5 (enExample) | ||
| JP2019186562A5 (enExample) | ||
| JP2014179607A5 (enExample) | ||
| JP2014143416A5 (enExample) | ||
| JP2013060663A5 (enExample) | ||
| JP2018510968A5 (enExample) | ||
| JP2012124492A5 (enExample) | ||
| JP2009521801A5 (enExample) | ||
| JP2014515877A5 (enExample) | ||
| TWI551716B (zh) | 形成鍺薄膜之方法 | |
| JP2018520510A5 (ja) | 多層構造体の製造方法 | |
| CN117165927A (zh) | 用于沉积共形bcn膜的方法 | |
| JP2017508883A (ja) | ゲルマニウムまたは酸化ゲルマニウムの原子層堆積 |