KR101501700B1 - 신규한 할로실릴게르만의 제조 및 사용 방법 - Google Patents

신규한 할로실릴게르만의 제조 및 사용 방법 Download PDF

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KR101501700B1
KR101501700B1 KR1020097022759A KR20097022759A KR101501700B1 KR 101501700 B1 KR101501700 B1 KR 101501700B1 KR 1020097022759 A KR1020097022759 A KR 1020097022759A KR 20097022759 A KR20097022759 A KR 20097022759A KR 101501700 B1 KR101501700 B1 KR 101501700B1
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South Korea
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silane
registration fee
compound
formula
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KR20100016087A (ko
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존 코우베타키스
제스 티스
얀-얀 팡
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아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Silicon Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020097022759A 2007-04-02 2008-04-02 신규한 할로실릴게르만의 제조 및 사용 방법 Expired - Fee Related KR101501700B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90950507P 2007-04-02 2007-04-02
US60/909,505 2007-04-02
PCT/US2008/059095 WO2009005862A2 (en) 2007-04-02 2008-04-02 Novel methods for making and using halosilylgermanes

Publications (2)

Publication Number Publication Date
KR20100016087A KR20100016087A (ko) 2010-02-12
KR101501700B1 true KR101501700B1 (ko) 2015-03-11

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KR1020097022759A Expired - Fee Related KR101501700B1 (ko) 2007-04-02 2008-04-02 신규한 할로실릴게르만의 제조 및 사용 방법

Country Status (7)

Country Link
US (1) US8043980B2 (enExample)
EP (1) EP2139680A4 (enExample)
JP (2) JP5638387B2 (enExample)
KR (1) KR101501700B1 (enExample)
CN (1) CN101678665B (enExample)
TW (1) TWI370107B (enExample)
WO (1) WO2009005862A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1019439A3 (fr) 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
US8945418B2 (en) * 2011-11-16 2015-02-03 The United States Of America, As Represented By The Secretary Of The Navy Melt stabilization and vapor-phase synthesis of cesium germanium halides
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9299566B2 (en) * 2014-02-25 2016-03-29 Tsinghua University Method for forming germanium-based layer
CN104362298B (zh) * 2014-12-03 2018-11-06 京东方科技集团股份有限公司 一种电极片及其制备方法、储能装置
CN109791629B (zh) * 2016-11-03 2023-12-15 英特尔公司 量子点器件
EP3413334B1 (de) * 2017-06-01 2020-09-09 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
EP3653577B1 (de) * 2018-11-14 2021-10-06 Evonik Operations GmbH Tris(trichlorsilyl)dichlorogallylgerman, verfahren zu dessen herstellung und dessen verwendung
DE102020114994A1 (de) 2020-06-05 2021-12-09 Johann Wolfgang Goethe-Universität Frankfurt am Main Stiftung des öffentlichen Rechts Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers
CN114890385B (zh) * 2021-07-01 2023-09-08 中国科学院上海硅酸盐研究所 一种高效抗氧化二维氢锗烯纳米片及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
KR910001876B1 (ko) * 1986-02-18 1991-03-28 솔라렉스 코포레이션 수소가 첨가된 비결정실리콘합금과 그의 제조방법 및 이를 이용한 광전지와 반도체장치

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
FR1204724A (fr) * 1957-07-17 1960-01-27 Kali Chemie Ag Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
US7589003B2 (en) * 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
WO2006031240A1 (en) 2004-09-14 2006-03-23 Arizona Board Of Regents Hydride compounds with silicon and germanium core atoms and method of synthesizing same
EP1807556A4 (en) * 2004-09-14 2011-03-02 Univ Arizona METHOD OF PULLING SI-GE SEMICONDUCTOR MATERIALS AND COMPONENTS ON SUBSTRATES
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
KR910001876B1 (ko) * 1986-02-18 1991-03-28 솔라렉스 코포레이션 수소가 첨가된 비결정실리콘합금과 그의 제조방법 및 이를 이용한 광전지와 반도체장치

Also Published As

Publication number Publication date
JP2010523458A (ja) 2010-07-15
TW200904754A (en) 2009-02-01
JP2014112681A (ja) 2014-06-19
WO2009005862A3 (en) 2009-02-26
CN101678665A (zh) 2010-03-24
US8043980B2 (en) 2011-10-25
US20100151666A1 (en) 2010-06-17
JP5638387B2 (ja) 2014-12-10
EP2139680A2 (en) 2010-01-06
EP2139680A4 (en) 2012-01-04
KR20100016087A (ko) 2010-02-12
TWI370107B (en) 2012-08-11
CN101678665B (zh) 2013-07-10
WO2009005862A2 (en) 2009-01-08

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