CN101678665B - 制备和使用卤代甲硅烷基锗烷的新方法 - Google Patents

制备和使用卤代甲硅烷基锗烷的新方法 Download PDF

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CN101678665B
CN101678665B CN2008800171455A CN200880017145A CN101678665B CN 101678665 B CN101678665 B CN 101678665B CN 2008800171455 A CN2008800171455 A CN 2008800171455A CN 200880017145 A CN200880017145 A CN 200880017145A CN 101678665 B CN101678665 B CN 101678665B
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silane
compound
formula
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CN101678665A (zh
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J·库维塔奇斯
J·泰斯
Y·方
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Arizona State University ASU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2008800171455A 2007-04-02 2008-04-02 制备和使用卤代甲硅烷基锗烷的新方法 Expired - Fee Related CN101678665B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90950507P 2007-04-02 2007-04-02
US60/909,505 2007-04-02
PCT/US2008/059095 WO2009005862A2 (en) 2007-04-02 2008-04-02 Novel methods for making and using halosilylgermanes

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CN101678665A CN101678665A (zh) 2010-03-24
CN101678665B true CN101678665B (zh) 2013-07-10

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US (1) US8043980B2 (enExample)
EP (1) EP2139680A4 (enExample)
JP (2) JP5638387B2 (enExample)
KR (1) KR101501700B1 (enExample)
CN (1) CN101678665B (enExample)
TW (1) TWI370107B (enExample)
WO (1) WO2009005862A2 (enExample)

Families Citing this family (10)

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BE1019439A3 (fr) * 2010-07-30 2012-07-03 Diarotech Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
US8945418B2 (en) * 2011-11-16 2015-02-03 The United States Of America, As Represented By The Secretary Of The Navy Melt stabilization and vapor-phase synthesis of cesium germanium halides
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US9299566B2 (en) * 2014-02-25 2016-03-29 Tsinghua University Method for forming germanium-based layer
CN104362298B (zh) * 2014-12-03 2018-11-06 京东方科技集团股份有限公司 一种电极片及其制备方法、储能装置
WO2018084878A1 (en) * 2016-11-03 2018-05-11 Intel Corporation Quantum dot devices
EP3413334B1 (de) * 2017-06-01 2020-09-09 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
EP3653577B1 (de) * 2018-11-14 2021-10-06 Evonik Operations GmbH Tris(trichlorsilyl)dichlorogallylgerman, verfahren zu dessen herstellung und dessen verwendung
DE102020114994A1 (de) 2020-06-05 2021-12-09 Johann Wolfgang Goethe-Universität Frankfurt am Main Stiftung des öffentlichen Rechts Silylierte Oligogermane, Verfahren zur Herstellung derselben sowie die Verwendung derselben zum Herstellen eines Si- und Ge-enthaltenden Festkörpers
CN114890385B (zh) * 2021-07-01 2023-09-08 中国科学院上海硅酸盐研究所 一种高效抗氧化二维氢锗烯纳米片及其制备方法和应用

Citations (2)

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US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
WO2006031240A1 (en) * 2004-09-14 2006-03-23 Arizona Board Of Regents Hydride compounds with silicon and germanium core atoms and method of synthesizing same

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FR1204724A (fr) * 1957-07-17 1960-01-27 Kali Chemie Ag Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
US7589003B2 (en) * 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
EP1807556A4 (en) 2004-09-14 2011-03-02 Univ Arizona METHOD OF PULLING SI-GE SEMICONDUCTOR MATERIALS AND COMPONENTS ON SUBSTRATES
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply

Patent Citations (3)

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US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
WO2006031240A1 (en) * 2004-09-14 2006-03-23 Arizona Board Of Regents Hydride compounds with silicon and germanium core atoms and method of synthesizing same
CN101057008A (zh) * 2004-09-14 2007-10-17 代表亚利桑那州立大学行事的亚利桑那董事会 在衬底上生长Si－Ge半导体材料和器件的方法

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B.M. Monroy et al.Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition.《Journal of luminescence》.2006,第121卷第349-352页. *
Mariella Fiorenza et al.Fluoride ion induced reactions of organosilanes: the preparation of mono and dicarbonyl compounds from β-Ketosilanes.《Tetrahedron Letters》.1985,第26卷(第6期),第787-788页. *

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Publication number Publication date
CN101678665A (zh) 2010-03-24
WO2009005862A2 (en) 2009-01-08
US20100151666A1 (en) 2010-06-17
EP2139680A2 (en) 2010-01-06
KR20100016087A (ko) 2010-02-12
EP2139680A4 (en) 2012-01-04
TWI370107B (en) 2012-08-11
JP2010523458A (ja) 2010-07-15
US8043980B2 (en) 2011-10-25
WO2009005862A3 (en) 2009-02-26
JP2014112681A (ja) 2014-06-19
JP5638387B2 (ja) 2014-12-10
KR101501700B1 (ko) 2015-03-11
TW200904754A (en) 2009-02-01

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