JP2015146461A5 - - Google Patents
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- Publication number
- JP2015146461A5 JP2015146461A5 JP2015090579A JP2015090579A JP2015146461A5 JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5 JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- oxygen
- precursor
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 26
- 229910052710 silicon Inorganic materials 0.000 claims 21
- 239000010703 silicon Substances 0.000 claims 21
- 239000002243 precursor Substances 0.000 claims 16
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 8
- 238000005137 deposition process Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000005229 chemical vapour deposition Methods 0.000 claims 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- IVSPVXKJEGPQJP-UHFFFAOYSA-N 2-silylethylsilane Chemical group [SiH3]CC[SiH3] IVSPVXKJEGPQJP-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 150000003141 primary amines Chemical class 0.000 claims 2
- 150000003335 secondary amines Chemical class 0.000 claims 2
- 239000012686 silicon precursor Substances 0.000 claims 2
- 150000003512 tertiary amines Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261677267P | 2012-07-30 | 2012-07-30 | |
| US61/677,267 | 2012-07-30 | ||
| US13/949,420 US9243324B2 (en) | 2012-07-30 | 2013-07-24 | Methods of forming non-oxygen containing silicon-based films |
| US13/949,420 | 2013-07-24 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Division JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015146461A JP2015146461A (ja) | 2015-08-13 |
| JP2015146461A5 true JP2015146461A5 (enExample) | 2017-01-12 |
| JP6356630B2 JP6356630B2 (ja) | 2018-07-11 |
Family
ID=48917373
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
| JP2015090579A Active JP6356630B2 (ja) | 2012-07-30 | 2015-04-27 | 酸素不含ケイ素系膜及びその形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9243324B2 (enExample) |
| EP (1) | EP2692897B1 (enExample) |
| JP (2) | JP5788932B2 (enExample) |
| KR (1) | KR101640153B1 (enExample) |
| CN (1) | CN103572251B (enExample) |
| TW (1) | TWI504775B (enExample) |
Families Citing this family (34)
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| JP6041527B2 (ja) * | 2012-05-16 | 2016-12-07 | キヤノン株式会社 | 液体吐出ヘッド |
| TW201441408A (zh) * | 2013-03-15 | 2014-11-01 | 應用材料股份有限公司 | 包含氮化矽之膜的電漿輔助原子層沉積 |
| JP5855691B2 (ja) * | 2014-02-25 | 2016-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6340251B2 (ja) * | 2014-05-30 | 2018-06-06 | 東京エレクトロン株式会社 | ＳｉＣＮ膜の成膜方法 |
| US9685325B2 (en) | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
| CN107002236B (zh) | 2014-09-23 | 2019-04-05 | 乔治洛德方法研究和开发液化空气有限公司 | 用于沉积含Si膜的碳硅烷取代的胺前体以及其方法 |
| SG11201703196WA (en) | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing films |
| US9879340B2 (en) * | 2014-11-03 | 2018-01-30 | Versum Materials Us, Llc | Silicon-based films and methods of forming the same |
| EP3254303B1 (en) * | 2015-02-06 | 2018-12-05 | Versum Materials US, LLC | Method for formation of carbon doped silicon containing films |
| TWI706957B (zh) | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US9799511B2 (en) | 2015-05-02 | 2017-10-24 | Applied Materials, Inc. | Methods for depositing low k and low wet etch rate dielectric thin films |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US9786492B2 (en) * | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| KR102255727B1 (ko) | 2016-02-26 | 2021-05-26 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소 함유 막의 증착을 위한 조성물, 및 이를 이용한 방법 |
| TWI753794B (zh) | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US20170323785A1 (en) | 2016-05-06 | 2017-11-09 | Lam Research Corporation | Method to deposit conformal and low wet etch rate encapsulation layer using pecvd |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| WO2018191484A1 (en) * | 2017-04-13 | 2018-10-18 | Applied Materials, Inc. | Method and apparatus for deposition of low-k films |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| KR102805403B1 (ko) | 2017-05-05 | 2025-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정 |
| TWI633201B (zh) * | 2017-10-24 | 2018-08-21 | 國立交通大學 | 非晶碳薄膜、其製造方法與包含其之光學系統 |
| US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
| US11239420B2 (en) | 2018-08-24 | 2022-02-01 | Lam Research Corporation | Conformal damage-free encapsulation of chalcogenide materials |
| EP3844318B1 (en) * | 2018-10-03 | 2025-12-10 | Versum Materials US, LLC | Methods for making silicon and nitrogen containing films |
| SE543442C2 (en) * | 2019-02-01 | 2021-02-16 | Ionautics Ab | A method and apparatus for chemical vapor deposition and a Fin field-effect transistor |
| US20220234903A1 (en) * | 2019-05-24 | 2022-07-28 | Versum Materials Us, Llc | Organosilicon precursors for deposition of silicon-containing films |
| TWI819257B (zh) * | 2019-12-20 | 2023-10-21 | 美商應用材料股份有限公司 | 具有可調整碳含量之碳氮化矽間隙填充 |
| US11499014B2 (en) | 2019-12-31 | 2022-11-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane |
| US12341005B2 (en) | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| US12142479B2 (en) | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| CN114686844A (zh) * | 2020-12-31 | 2022-07-01 | 厦门理工学院 | 一种基于原子层沉积的非晶硅薄膜制备方法 |
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| JPH073822A (ja) | 1993-06-19 | 1995-01-06 | Kyushu Sefutei:Kk | 柱または壁用孔付コンクリート製品およびその型枠 |
| KR960012710B1 (ko) | 1993-10-11 | 1996-09-24 | 한국화학연구소 | 단일 유기규소 화합물을 이용한 탄화규소 막의 제조 |
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| US20030194496A1 (en) | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Methods for depositing dielectric material |
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| JP6043546B2 (ja) * | 2011-10-21 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
-
2013
- 2013-07-24 US US13/949,420 patent/US9243324B2/en active Active
- 2013-07-29 TW TW102127178A patent/TWI504775B/zh active
- 2013-07-30 KR KR1020130090486A patent/KR101640153B1/ko active Active
- 2013-07-30 CN CN201310332542.4A patent/CN103572251B/zh active Active
- 2013-07-30 JP JP2013157982A patent/JP5788932B2/ja active Active
- 2013-07-30 EP EP13178623.8A patent/EP2692897B1/en active Active
-
2015
- 2015-04-27 JP JP2015090579A patent/JP6356630B2/ja active Active
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