JP2015146461A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015146461A5 JP2015146461A5 JP2015090579A JP2015090579A JP2015146461A5 JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5 JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015090579 A JP2015090579 A JP 2015090579A JP 2015146461 A5 JP2015146461 A5 JP 2015146461A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- oxygen
- precursor
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 26
- 229910052710 silicon Inorganic materials 0.000 claims 21
- 239000010703 silicon Substances 0.000 claims 21
- 239000002243 precursor Substances 0.000 claims 16
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 8
- 238000005137 deposition process Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000005229 chemical vapour deposition Methods 0.000 claims 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- IVSPVXKJEGPQJP-UHFFFAOYSA-N 2-silylethylsilane Chemical group [SiH3]CC[SiH3] IVSPVXKJEGPQJP-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 150000003141 primary amines Chemical class 0.000 claims 2
- 150000003335 secondary amines Chemical class 0.000 claims 2
- 239000012686 silicon precursor Substances 0.000 claims 2
- 150000003512 tertiary amines Chemical class 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261677267P | 2012-07-30 | 2012-07-30 | |
| US61/677,267 | 2012-07-30 | ||
| US13/949,420 US9243324B2 (en) | 2012-07-30 | 2013-07-24 | Methods of forming non-oxygen containing silicon-based films |
| US13/949,420 | 2013-07-24 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Division JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015146461A JP2015146461A (ja) | 2015-08-13 |
| JP2015146461A5 true JP2015146461A5 (enExample) | 2017-01-12 |
| JP6356630B2 JP6356630B2 (ja) | 2018-07-11 |
Family
ID=48917373
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
| JP2015090579A Active JP6356630B2 (ja) | 2012-07-30 | 2015-04-27 | 酸素不含ケイ素系膜及びその形成方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013157982A Active JP5788932B2 (ja) | 2012-07-30 | 2013-07-30 | 酸素不含ケイ素系膜及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9243324B2 (enExample) |
| EP (1) | EP2692897B1 (enExample) |
| JP (2) | JP5788932B2 (enExample) |
| KR (1) | KR101640153B1 (enExample) |
| CN (1) | CN103572251B (enExample) |
| TW (1) | TWI504775B (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6041527B2 (ja) * | 2012-05-16 | 2016-12-07 | キヤノン株式会社 | 液体吐出ヘッド |
| TW201441408A (zh) * | 2013-03-15 | 2014-11-01 | Applied Materials Inc | 包含氮化矽之膜的電漿輔助原子層沉積 |
| JP5855691B2 (ja) * | 2014-02-25 | 2016-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6340251B2 (ja) * | 2014-05-30 | 2018-06-06 | 東京エレクトロン株式会社 | ＳｉＣＮ膜の成膜方法 |
| US9685325B2 (en) | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
| WO2016049154A1 (en) | 2014-09-23 | 2016-03-31 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Carbosilane substituted amine precursors for deposition of si-containing films and methods thereof |
| SG11201703195QA (en) | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
| US9879340B2 (en) * | 2014-11-03 | 2018-01-30 | Versum Materials Us, Llc | Silicon-based films and methods of forming the same |
| TWI585230B (zh) * | 2015-02-06 | 2017-06-01 | 氣體產品及化學品股份公司 | 用於碳摻雜的含矽膜的組合物及其方法 |
| TWI716333B (zh) | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| JP6968701B2 (ja) | 2015-05-02 | 2021-11-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 低誘電率かつ低湿式エッチング速度の誘電体薄膜を堆積させるための方法 |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US9786492B2 (en) * | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US12428722B2 (en) | 2016-02-26 | 2025-09-30 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
| TWI724141B (zh) | 2016-03-23 | 2021-04-11 | 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US10157736B2 (en) | 2016-05-06 | 2018-12-18 | Lam Research Corporation | Methods of encapsulation |
| KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
| CN110612596B (zh) * | 2017-04-13 | 2023-08-15 | 应用材料公司 | 用于沉积低介电常数膜的方法与设备 |
| CN114875388A (zh) | 2017-05-05 | 2022-08-09 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
| TWI633201B (zh) * | 2017-10-24 | 2018-08-21 | 國立交通大學 | 非晶碳薄膜、其製造方法與包含其之光學系統 |
| KR20190065962A (ko) | 2017-12-04 | 2019-06-12 | 에이에스엠 아이피 홀딩 비.브이. | 유전체와 금속 표면 상에 SiOC의 균일한 증착 |
| US11239420B2 (en) | 2018-08-24 | 2022-02-01 | Lam Research Corporation | Conformal damage-free encapsulation of chalcogenide materials |
| US20210398796A1 (en) * | 2018-10-03 | 2021-12-23 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| SE543442C2 (en) * | 2019-02-01 | 2021-02-16 | Ionautics Ab | A method and apparatus for chemical vapor deposition and a Fin field-effect transistor |
| WO2020242868A1 (en) * | 2019-05-24 | 2020-12-03 | Versum Materials Us, Llc | Organosilicon precursors for deposition of silicon-containing films |
| TWI819257B (zh) * | 2019-12-20 | 2023-10-21 | 美商應用材料股份有限公司 | 具有可調整碳含量之碳氮化矽間隙填充 |
| US11499014B2 (en) | 2019-12-31 | 2022-11-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane |
| US12142479B2 (en) * | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US12341005B2 (en) * | 2020-01-17 | 2025-06-24 | Asm Ip Holding B.V. | Formation of SiCN thin films |
| CN114686844A (zh) * | 2020-12-31 | 2022-07-01 | 厦门理工学院 | 一种基于原子层沉积的非晶硅薄膜制备方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4863755A (en) * | 1987-10-16 | 1989-09-05 | The Regents Of The University Of California | Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors |
| US4923716A (en) | 1988-09-26 | 1990-05-08 | Hughes Aircraft Company | Chemical vapor desposition of silicon carbide |
| US5204141A (en) | 1991-09-18 | 1993-04-20 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
| JPH073822A (ja) | 1993-06-19 | 1995-01-06 | Kyushu Sefutei:Kk | 柱または壁用孔付コンクリート製品およびその型枠 |
| KR960012710B1 (ko) | 1993-10-11 | 1996-09-24 | 한국화학연구소 | 단일 유기규소 화합물을 이용한 탄화규소 막의 제조 |
| TW285753B (enExample) | 1995-01-04 | 1996-09-11 | Air Prod & Chem | |
| EP1607493B1 (en) * | 1998-02-11 | 2008-12-10 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US6245690B1 (en) | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
| US6838393B2 (en) | 2001-12-14 | 2005-01-04 | Applied Materials, Inc. | Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide |
| US20030194496A1 (en) | 2002-04-11 | 2003-10-16 | Applied Materials, Inc. | Methods for depositing dielectric material |
| US6858548B2 (en) | 2002-04-18 | 2005-02-22 | Applied Materials, Inc. | Application of carbon doped silicon oxide film to flat panel industry |
| US20060008661A1 (en) | 2003-08-01 | 2006-01-12 | Wijesundara Muthu B | Manufacturable low-temperature silicon carbide deposition technology |
| US20050233555A1 (en) * | 2004-04-19 | 2005-10-20 | Nagarajan Rajagopalan | Adhesion improvement for low k dielectrics to conductive materials |
| US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
| FR2887252A1 (fr) | 2005-06-21 | 2006-12-22 | Air Liquide | Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede |
| US8530361B2 (en) * | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
| US7964442B2 (en) | 2007-10-09 | 2011-06-21 | Applied Materials, Inc. | Methods to obtain low k dielectric barrier with superior etch resistivity |
| US8765233B2 (en) | 2008-12-09 | 2014-07-01 | Asm Japan K.K. | Method for forming low-carbon CVD film for filling trenches |
| US8703624B2 (en) | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8202783B2 (en) | 2009-09-29 | 2012-06-19 | International Business Machines Corporation | Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication |
| US8912353B2 (en) * | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
| JP2013531899A (ja) | 2010-07-02 | 2013-08-08 | マシスン トライ−ガス インコーポレイテッド | Ｓｉ−含有材料および置換的にドーピングされた結晶性ｓｉ−含有材料の選択エピタキシー |
| US8771807B2 (en) * | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
| US8921014B2 (en) * | 2011-10-14 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography mask and method of forming a lithography mask |
| JP6043546B2 (ja) * | 2011-10-21 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
-
2013
- 2013-07-24 US US13/949,420 patent/US9243324B2/en active Active
- 2013-07-29 TW TW102127178A patent/TWI504775B/zh active
- 2013-07-30 CN CN201310332542.4A patent/CN103572251B/zh active Active
- 2013-07-30 KR KR1020130090486A patent/KR101640153B1/ko active Active
- 2013-07-30 JP JP2013157982A patent/JP5788932B2/ja active Active
- 2013-07-30 EP EP13178623.8A patent/EP2692897B1/en active Active
-
2015
- 2015-04-27 JP JP2015090579A patent/JP6356630B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015146461A5 (enExample) | ||
| US8821986B2 (en) | Activated silicon precursors for low temperature deposition | |
| WO2009149167A3 (en) | Low temperature deposition of silicon-containing films | |
| JP2015159306A5 (enExample) | ||
| JP5453495B2 (ja) | ケイ素含有フィルムの低温堆積 | |
| JP6456450B2 (ja) | 新規なシクロジシラザン誘導体およびその製造方法、並びにそれを用いたシリコン含有薄膜 | |
| JP2006013503A5 (enExample) | ||
| JP2011522120A5 (enExample) | ||
| EP2618365A3 (en) | Method for depositing a chlorine-free conformal SiN film | |
| JP2019501528A5 (enExample) | ||
| EP3929326A3 (en) | Compositions and processes for depositing carbon-doped silicon-containing films | |
| CN110036139A (zh) | 用于薄膜沉积的短无机三甲硅烷基胺基聚硅氮烷 | |
| TW201018741A (en) | Amino vinylsilane precursors for stressed SiN films | |
| JP2014179607A5 (enExample) | ||
| JP2015026849A5 (enExample) | ||
| JP2014143416A5 (enExample) | ||
| JP2010147485A5 (ja) | アミノシラン、シリコン含有膜の形成用前駆体、シリコン含有膜の形成用組成物 | |
| CN106488924B (zh) | 新的氨基-甲硅烷基胺化合物以及通过使用原子层沉积制造包含Si-N键的介电膜的方法 | |
| JP2009111382A5 (enExample) | ||
| JP2008135755A5 (enExample) | ||
| WO2008129508A2 (en) | Deposition of transition metal carbide containing films | |
| CN110431192B (zh) | 用于沉积含硅薄膜的组合物及使用其制造含硅薄膜的方法 | |
| TW201610204A (zh) | 矽碳氮氧化物的低溫分子層沉積 | |
| JP2010228965A5 (enExample) | ||
| JP2010523458A5 (enExample) |