JP2018510493A5 - - Google Patents

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Publication number
JP2018510493A5
JP2018510493A5 JP2017538669A JP2017538669A JP2018510493A5 JP 2018510493 A5 JP2018510493 A5 JP 2018510493A5 JP 2017538669 A JP2017538669 A JP 2017538669A JP 2017538669 A JP2017538669 A JP 2017538669A JP 2018510493 A5 JP2018510493 A5 JP 2018510493A5
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JP
Japan
Prior art keywords
dopant
wafer
semiconductor
concentration
main
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JP2017538669A
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English (en)
Japanese (ja)
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JP2018510493A (ja
JP6805155B2 (ja
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Priority claimed from PCT/US2015/055460 external-priority patent/WO2016122731A1/en
Publication of JP2018510493A publication Critical patent/JP2018510493A/ja
Publication of JP2018510493A5 publication Critical patent/JP2018510493A5/ja
Application granted granted Critical
Publication of JP6805155B2 publication Critical patent/JP6805155B2/ja
Expired - Fee Related legal-status Critical Current
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JP2017538669A 2015-01-26 2015-10-14 プロファイルされたドーピングを有する半導体ウェハを生成する方法、ならびに、ドリフト電場および裏面電界などのプロファイル場を有するウェハおよびソーラセルコンポーネント Expired - Fee Related JP6805155B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562107711P 2015-01-26 2015-01-26
US62/107,711 2015-01-26
US201562239115P 2015-10-08 2015-10-08
US62/239,115 2015-10-08
PCT/US2015/055460 WO2016122731A1 (en) 2015-01-26 2015-10-14 Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

Publications (3)

Publication Number Publication Date
JP2018510493A JP2018510493A (ja) 2018-04-12
JP2018510493A5 true JP2018510493A5 (enExample) 2018-11-22
JP6805155B2 JP6805155B2 (ja) 2020-12-23

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ID=56544124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017538669A Expired - Fee Related JP6805155B2 (ja) 2015-01-26 2015-10-14 プロファイルされたドーピングを有する半導体ウェハを生成する方法、ならびに、ドリフト電場および裏面電界などのプロファイル場を有するウェハおよびソーラセルコンポーネント

Country Status (14)

Country Link
US (2) US10439095B2 (enExample)
EP (1) EP3251146B1 (enExample)
JP (1) JP6805155B2 (enExample)
KR (1) KR102316876B1 (enExample)
CN (1) CN107408490B (enExample)
ES (1) ES2852725T3 (enExample)
HK (1) HK1243548A1 (enExample)
MX (1) MX391975B (enExample)
MY (2) MY205282A (enExample)
PH (1) PH12017501266B1 (enExample)
SA (1) SA517381945B1 (enExample)
SG (1) SG11201705410PA (enExample)
TW (1) TWI704696B (enExample)
WO (1) WO2016122731A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102098705B1 (ko) 2018-07-16 2020-04-08 한국에너지기술연구원 P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지
KR102477355B1 (ko) 2018-10-23 2022-12-15 삼성전자주식회사 캐리어 기판 및 이를 이용한 기판 처리 장치
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
DE102019008927B4 (de) * 2019-12-20 2024-04-11 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
CN116632093A (zh) * 2023-04-21 2023-08-22 晶科能源(海宁)有限公司 太阳能电池及其制备方法、光伏组件
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3616785B2 (ja) 1996-09-19 2005-02-02 キヤノン株式会社 太陽電池の製造方法
NL1026377C2 (nl) * 2004-06-10 2005-12-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn-siliciumfolies.
US8106481B2 (en) * 2004-09-03 2012-01-31 Rao G R Mohan Semiconductor devices with graded dopant regions
JP4467392B2 (ja) * 2004-09-24 2010-05-26 シャープ株式会社 結晶シートの製造方法
JP4481869B2 (ja) 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
US20090050204A1 (en) * 2007-08-03 2009-02-26 Illuminex Corporation. Photovoltaic device using nanostructured material
US7928015B2 (en) 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
US20080220544A1 (en) * 2007-03-10 2008-09-11 Bucher Charles E Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
US8404970B2 (en) 2009-05-01 2013-03-26 Silicor Materials Inc. Bifacial solar cells with back surface doping
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
JP2013015740A (ja) 2011-07-06 2013-01-24 Japan Display East Co Ltd 液晶表示装置
JP2013105602A (ja) 2011-11-11 2013-05-30 Hitachi Ltd 燃料電池スタック及び燃料電池システム
TW201331991A (zh) * 2012-01-10 2013-08-01 Hitachi Chemical Co Ltd ｎ型擴散層形成組成物、ｎ型擴散層形成組成物套組、帶有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法
WO2013142892A1 (en) * 2012-03-29 2013-10-03 Newsouth Innovations Pty Limited Formation of localised molten regions in silicon containing multiple impurity types
US9306087B2 (en) * 2012-09-04 2016-04-05 E I Du Pont De Nemours And Company Method for manufacturing a photovoltaic cell with a locally diffused rear side

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