KR102316876B1 - 윤곽이 드러난 도핑을 가지는 반도체 웨이퍼 및 웨이퍼들의 제조 방법과, 드리프트 표면 및 백면과 같은 윤곽이 드러난 필드를 가지는 태양전지 성분들의 제조 방법 - Google Patents

윤곽이 드러난 도핑을 가지는 반도체 웨이퍼 및 웨이퍼들의 제조 방법과, 드리프트 표면 및 백면과 같은 윤곽이 드러난 필드를 가지는 태양전지 성분들의 제조 방법 Download PDF

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KR102316876B1
KR102316876B1 KR1020177023916A KR20177023916A KR102316876B1 KR 102316876 B1 KR102316876 B1 KR 102316876B1 KR 1020177023916 A KR1020177023916 A KR 1020177023916A KR 20177023916 A KR20177023916 A KR 20177023916A KR 102316876 B1 KR102316876 B1 KR 102316876B1
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dopant
wafer
delete delete
concentration
mold
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KR20170108107A (ko
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랄프 조닉
브라이언 디. 케르난
스테펜 지. 디. 허델슨
아담 엠. 로렌즈
임마누엘 엠. 작스
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1366 테크놀로지 인코포레이티드
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    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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KR1020177023916A 2015-01-26 2015-10-14 윤곽이 드러난 도핑을 가지는 반도체 웨이퍼 및 웨이퍼들의 제조 방법과, 드리프트 표면 및 백면과 같은 윤곽이 드러난 필드를 가지는 태양전지 성분들의 제조 방법 Expired - Fee Related KR102316876B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562107711P 2015-01-26 2015-01-26
US62/107,711 2015-01-26
US201562239115P 2015-10-08 2015-10-08
US62/239,115 2015-10-08
PCT/US2015/055460 WO2016122731A1 (en) 2015-01-26 2015-10-14 Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

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KR20170108107A KR20170108107A (ko) 2017-09-26
KR102316876B1 true KR102316876B1 (ko) 2021-10-22

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KR1020177023916A Expired - Fee Related KR102316876B1 (ko) 2015-01-26 2015-10-14 윤곽이 드러난 도핑을 가지는 반도체 웨이퍼 및 웨이퍼들의 제조 방법과, 드리프트 표면 및 백면과 같은 윤곽이 드러난 필드를 가지는 태양전지 성분들의 제조 방법

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EP (1) EP3251146B1 (enExample)
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CN (1) CN107408490B (enExample)
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HK (1) HK1243548A1 (enExample)
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KR102098705B1 (ko) 2018-07-16 2020-04-08 한국에너지기술연구원 P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지
KR102477355B1 (ko) 2018-10-23 2022-12-15 삼성전자주식회사 캐리어 기판 및 이를 이용한 기판 처리 장치
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
DE102019008927B4 (de) * 2019-12-20 2024-04-11 Azur Space Solar Power Gmbh Gasphasenepitaxieverfahren
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
CN116632093A (zh) * 2023-04-21 2023-08-22 晶科能源(海宁)有限公司 太阳能电池及其制备方法、光伏组件
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

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