MX2017008785A - Metodos para crear una oblea semiconductora que tiene dopaje perfilado y componentes de obleas y celula fotoelectrica que tienen un campo perfilado, como una superficie de deriva y posterior. - Google Patents

Metodos para crear una oblea semiconductora que tiene dopaje perfilado y componentes de obleas y celula fotoelectrica que tienen un campo perfilado, como una superficie de deriva y posterior.

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Publication number
MX2017008785A
MX2017008785A MX2017008785A MX2017008785A MX2017008785A MX 2017008785 A MX2017008785 A MX 2017008785A MX 2017008785 A MX2017008785 A MX 2017008785A MX 2017008785 A MX2017008785 A MX 2017008785A MX 2017008785 A MX2017008785 A MX 2017008785A
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Mexico
Prior art keywords
dopant
wafer
back surface
melt
profiled
Prior art date
Application number
MX2017008785A
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English (en)
Inventor
M Sachs Emanuel
M Lorenz Adam
Jonczyk Ralf
D Stephen Hudelson G
D Kernan Brian
Original Assignee
1366 Tech Inc
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Publication date
Application filed by 1366 Tech Inc filed Critical 1366 Tech Inc
Publication of MX2017008785A publication Critical patent/MX2017008785A/es

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Silicon Compounds (AREA)

Abstract

Una oblea semiconductora forma un molde que contiene un dopante. El dopante dopa una región de fusión adyacente al molde. Allí, la concentración de dopante es mayor que en la masa fundida. Una oblea comienza a solidificar. El dopante se difunde pobremente en el semiconductor sólido. Después de que una oblea comienza a solidificar, el dopante no puede entrar a la masa fundida. Posteriormente, la concentración de dopante en la masa fundida adyacente a la superficie de la oblea es menor que la que estaba presente donde la oblea comenzó a formarse. Nuevas regiones de oblea crecen desde una región de fusión cuya concentración de dopante disminuye con el tiempo. Esto establece un gradiente de dopante en la oblea, con una concentración mayor adyacente al molde. El gradiente puede ser diseñado. Un gradiente da lugar a un campo que puede funcionar como un campo de superficie de deriva o posterior. Los colectores solares pueden tener conductores de rejilla abierta y mejores reflectores ópticos sobre la superficie posterior, lo que es posible por el campo de superficie posterior intrínseco.
MX2017008785A 2015-01-26 2015-10-14 Metodos para crear una oblea semiconductora que tiene dopaje perfilado y componentes de obleas y celula fotoelectrica que tienen un campo perfilado, como una superficie de deriva y posterior. MX2017008785A (es)

Applications Claiming Priority (3)

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US201562107711P 2015-01-26 2015-01-26
US201562239115P 2015-10-08 2015-10-08
PCT/US2015/055460 WO2016122731A1 (en) 2015-01-26 2015-10-14 Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

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EP (1) EP3251146B1 (es)
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KR102098705B1 (ko) 2018-07-16 2020-04-08 한국에너지기술연구원 P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지
KR102477355B1 (ko) 2018-10-23 2022-12-15 삼성전자주식회사 캐리어 기판 및 이를 이용한 기판 처리 장치
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