JP6805155B2 - プロファイルされたドーピングを有する半導体ウェハを生成する方法、ならびに、ドリフト電場および裏面電界などのプロファイル場を有するウェハおよびソーラセルコンポーネント - Google Patents
プロファイルされたドーピングを有する半導体ウェハを生成する方法、ならびに、ドリフト電場および裏面電界などのプロファイル場を有するウェハおよびソーラセルコンポーネント Download PDFInfo
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- JP6805155B2 JP6805155B2 JP2017538669A JP2017538669A JP6805155B2 JP 6805155 B2 JP6805155 B2 JP 6805155B2 JP 2017538669 A JP2017538669 A JP 2017538669A JP 2017538669 A JP2017538669 A JP 2017538669A JP 6805155 B2 JP6805155 B2 JP 6805155B2
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Classifications
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| US201562107711P | 2015-01-26 | 2015-01-26 | |
| US62/107,711 | 2015-01-26 | ||
| US201562239115P | 2015-10-08 | 2015-10-08 | |
| US62/239,115 | 2015-10-08 | ||
| PCT/US2015/055460 WO2016122731A1 (en) | 2015-01-26 | 2015-10-14 | Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface |
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| JP2018510493A JP2018510493A (ja) | 2018-04-12 |
| JP2018510493A5 JP2018510493A5 (es) | 2018-11-22 |
| JP6805155B2 true JP6805155B2 (ja) | 2020-12-23 |
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| CN (1) | CN107408490B (es) |
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| KR102098705B1 (ko) | 2018-07-16 | 2020-04-08 | 한국에너지기술연구원 | P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지 |
| KR102477355B1 (ko) | 2018-10-23 | 2022-12-15 | 삼성전자주식회사 | 캐리어 기판 및 이를 이용한 기판 처리 장치 |
| DE102019008927B4 (de) * | 2019-12-20 | 2024-04-11 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
| EP4443743A2 (en) | 2021-06-16 | 2024-10-09 | Conti Innovation Center, LLC | Solar module racking system |
| CN116632093A (zh) * | 2023-04-21 | 2023-08-22 | 晶科能源(海宁)有限公司 | 太阳能电池及其制备方法、光伏组件 |
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| NL1026377C2 (nl) * | 2004-06-10 | 2005-12-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn-siliciumfolies. |
| US8106481B2 (en) | 2004-09-03 | 2012-01-31 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
| JP4467392B2 (ja) * | 2004-09-24 | 2010-05-26 | シャープ株式会社 | 結晶シートの製造方法 |
| JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| US20090050204A1 (en) | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| US7928015B2 (en) | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
| US20080220544A1 (en) * | 2007-03-10 | 2008-09-11 | Bucher Charles E | Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth |
| US20090092745A1 (en) * | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
| KR101622714B1 (ko) * | 2009-02-11 | 2016-05-19 | 뉴사우스 이노베이션즈 피티와이 리미티드 | 광전 디바이스 구조 및 방법 |
| US8298850B2 (en) * | 2009-05-01 | 2012-10-30 | Silicor Materials Inc. | Bifacial solar cells with overlaid back grid surface |
| DE102010024308A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle |
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| JP2013105602A (ja) | 2011-11-11 | 2013-05-30 | Hitachi Ltd | 燃料電池スタック及び燃料電池システム |
| WO2013142892A1 (en) | 2012-03-29 | 2013-10-03 | Newsouth Innovations Pty Limited | Formation of localised molten regions in silicon containing multiple impurity types |
| US9306087B2 (en) | 2012-09-04 | 2016-04-05 | E I Du Pont De Nemours And Company | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
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| EP3251146A1 (en) | 2017-12-06 |
| US20190393375A1 (en) | 2019-12-26 |
| EP3251146B1 (en) | 2020-12-02 |
| CN107408490B (zh) | 2021-05-25 |
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