TWI704696B - 用於製造具有輪廓摻雜的半導體晶圓的方法以及具有如漂移和背表面輪廓電場的晶圓和太陽能電池構件 - Google Patents

用於製造具有輪廓摻雜的半導體晶圓的方法以及具有如漂移和背表面輪廓電場的晶圓和太陽能電池構件 Download PDF

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TWI704696B
TWI704696B TW104138228A TW104138228A TWI704696B TW I704696 B TWI704696 B TW I704696B TW 104138228 A TW104138228 A TW 104138228A TW 104138228 A TW104138228 A TW 104138228A TW I704696 B TWI704696 B TW I704696B
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dopant
wafer
mold
concentration
melt
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TW201628211A (zh
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拉爾夫 強克席克
布萊恩Ｄ 卡能
斯蒂芬Ｇ Ｄ 胡德森
亞當Ｍ 羅倫茲
伊繆爾Ｍ 莎栩思
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美商１３６６科技公司
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    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
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    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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    • C30B29/02—Elements
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    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
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    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
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TW104138228A 2015-01-26 2015-11-19 用於製造具有輪廓摻雜的半導體晶圓的方法以及具有如漂移和背表面輪廓電場的晶圓和太陽能電池構件 TWI704696B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562107711P 2015-01-26 2015-01-26
US62/107,711 2015-01-26
US201562239115P 2015-10-08 2015-10-08
US62/239,115 2015-10-08
WOPCT/US15/55460 2015-10-14
PCT/US2015/055460 WO2016122731A1 (en) 2015-01-26 2015-10-14 Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

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TW201628211A TW201628211A (zh) 2016-08-01
TWI704696B true TWI704696B (zh) 2020-09-11

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US (2) US10439095B2 (enExample)
EP (1) EP3251146B1 (enExample)
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KR (1) KR102316876B1 (enExample)
CN (1) CN107408490B (enExample)
ES (1) ES2852725T3 (enExample)
HK (1) HK1243548A1 (enExample)
MX (1) MX391975B (enExample)
MY (2) MY205282A (enExample)
PH (1) PH12017501266B1 (enExample)
SA (1) SA517381945B1 (enExample)
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KR102098705B1 (ko) 2018-07-16 2020-04-08 한국에너지기술연구원 P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지
KR102477355B1 (ko) 2018-10-23 2022-12-15 삼성전자주식회사 캐리어 기판 및 이를 이용한 기판 처리 장치
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
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IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
CN116632093A (zh) * 2023-04-21 2023-08-22 晶科能源(海宁)有限公司 太阳能电池及其制备方法、光伏组件
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

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