ES2852725T3 - Procedimiento para crear una oblea semiconductora que tiene dopado perfilado - Google Patents
Procedimiento para crear una oblea semiconductora que tiene dopado perfilado Download PDFInfo
- Publication number
- ES2852725T3 ES2852725T3 ES15880612T ES15880612T ES2852725T3 ES 2852725 T3 ES2852725 T3 ES 2852725T3 ES 15880612 T ES15880612 T ES 15880612T ES 15880612 T ES15880612 T ES 15880612T ES 2852725 T3 ES2852725 T3 ES 2852725T3
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- Prior art keywords
- dopant
- wafer
- mold
- boron
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000002019 doping agent Substances 0.000 claims abstract description 223
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 26
- 239000012768 molten material Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims description 83
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 82
- 239000000370 acceptor Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052698 phosphorus Inorganic materials 0.000 claims description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 239000002800 charge carrier Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 177
- 239000000155 melt Substances 0.000 description 79
- 210000004027 cell Anatomy 0.000 description 46
- 229910052710 silicon Inorganic materials 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- 238000005204 segregation Methods 0.000 description 35
- 239000010410 layer Substances 0.000 description 26
- 239000000969 carrier Substances 0.000 description 21
- 238000011161 development Methods 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 17
- 230000005684 electric field Effects 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 14
- 238000007711 solidification Methods 0.000 description 12
- 230000008023 solidification Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 230000001413 cellular effect Effects 0.000 description 9
- 229910052582 BN Inorganic materials 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910052810 boron oxide Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000003306 harvesting Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 150000001639 boron compounds Chemical class 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- -1 primary Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Natural products C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007630 basic procedure Methods 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- C—CHEMISTRY; METALLURGY
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
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- C30B19/00—Liquid-phase epitaxial-layer growth
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
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- H10F77/20—Electrodes
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- H10F77/40—Optical elements or arrangements
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- H10F77/48—Back surface reflectors [BSR]
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- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562107711P | 2015-01-26 | 2015-01-26 | |
| US201562239115P | 2015-10-08 | 2015-10-08 | |
| PCT/US2015/055460 WO2016122731A1 (en) | 2015-01-26 | 2015-10-14 | Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface |
Publications (1)
| Publication Number | Publication Date |
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| ES2852725T3 true ES2852725T3 (es) | 2021-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES15880612T Active ES2852725T3 (es) | 2015-01-26 | 2015-10-14 | Procedimiento para crear una oblea semiconductora que tiene dopado perfilado |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US10439095B2 (enExample) |
| EP (1) | EP3251146B1 (enExample) |
| JP (1) | JP6805155B2 (enExample) |
| KR (1) | KR102316876B1 (enExample) |
| CN (1) | CN107408490B (enExample) |
| ES (1) | ES2852725T3 (enExample) |
| HK (1) | HK1243548A1 (enExample) |
| MX (1) | MX391975B (enExample) |
| MY (2) | MY205282A (enExample) |
| PH (1) | PH12017501266B1 (enExample) |
| SA (1) | SA517381945B1 (enExample) |
| SG (1) | SG11201705410PA (enExample) |
| TW (1) | TWI704696B (enExample) |
| WO (1) | WO2016122731A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102098705B1 (ko) | 2018-07-16 | 2020-04-08 | 한국에너지기술연구원 | P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지 |
| KR102477355B1 (ko) | 2018-10-23 | 2022-12-15 | 삼성전자주식회사 | 캐리어 기판 및 이를 이용한 기판 처리 장치 |
| US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| DE102019008927B4 (de) * | 2019-12-20 | 2024-04-11 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
| IL309370B2 (en) | 2021-06-16 | 2025-07-01 | Conti Spe Llc | Mechanically stacked solar transmissive cells or modules |
| CN116632093A (zh) * | 2023-04-21 | 2023-08-22 | 晶科能源(海宁)有限公司 | 太阳能电池及其制备方法、光伏组件 |
| US12414402B1 (en) | 2025-01-03 | 2025-09-09 | Conti Innovation Center, Llc | Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3616785B2 (ja) | 1996-09-19 | 2005-02-02 | キヤノン株式会社 | 太陽電池の製造方法 |
| NL1026377C2 (nl) * | 2004-06-10 | 2005-12-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn-siliciumfolies. |
| US8106481B2 (en) * | 2004-09-03 | 2012-01-31 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
| JP4467392B2 (ja) * | 2004-09-24 | 2010-05-26 | シャープ株式会社 | 結晶シートの製造方法 |
| JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| US7928015B2 (en) | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
| US20080220544A1 (en) * | 2007-03-10 | 2008-09-11 | Bucher Charles E | Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth |
| US20090092745A1 (en) * | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
| WO2010091466A1 (en) * | 2009-02-11 | 2010-08-19 | Newsouth Innovations Pty Limited | Photovoltaic device structure and method |
| US8404970B2 (en) | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
| DE102010024308A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle |
| JP2013015740A (ja) | 2011-07-06 | 2013-01-24 | Japan Display East Co Ltd | 液晶表示装置 |
| JP2013105602A (ja) | 2011-11-11 | 2013-05-30 | Hitachi Ltd | 燃料電池スタック及び燃料電池システム |
| TW201331991A (zh) * | 2012-01-10 | 2013-08-01 | Hitachi Chemical Co Ltd | ｎ型擴散層形成組成物、ｎ型擴散層形成組成物套組、帶有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 |
| WO2013142892A1 (en) * | 2012-03-29 | 2013-10-03 | Newsouth Innovations Pty Limited | Formation of localised molten regions in silicon containing multiple impurity types |
| US9306087B2 (en) * | 2012-09-04 | 2016-04-05 | E I Du Pont De Nemours And Company | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
-
2015
- 2015-10-14 US US15/546,030 patent/US10439095B2/en active Active
- 2015-10-14 PH PH1/2017/501266A patent/PH12017501266B1/en unknown
- 2015-10-14 MY MYPI2021001772A patent/MY205282A/en unknown
- 2015-10-14 WO PCT/US2015/055460 patent/WO2016122731A1/en not_active Ceased
- 2015-10-14 MX MX2017008785A patent/MX391975B/es unknown
- 2015-10-14 KR KR1020177023916A patent/KR102316876B1/ko not_active Expired - Fee Related
- 2015-10-14 EP EP15880612.5A patent/EP3251146B1/en not_active Not-in-force
- 2015-10-14 SG SG11201705410PA patent/SG11201705410PA/en unknown
- 2015-10-14 MY MYPI2017001016A patent/MY186316A/en unknown
- 2015-10-14 ES ES15880612T patent/ES2852725T3/es active Active
- 2015-10-14 CN CN201580078308.0A patent/CN107408490B/zh not_active Expired - Fee Related
- 2015-10-14 HK HK18102773.9A patent/HK1243548A1/zh unknown
- 2015-10-14 JP JP2017538669A patent/JP6805155B2/ja not_active Expired - Fee Related
- 2015-11-19 TW TW104138228A patent/TWI704696B/zh not_active IP Right Cessation
-
2017
- 2017-07-19 SA SA517381945A patent/SA517381945B1/ar unknown
-
2019
- 2019-09-04 US US16/559,971 patent/US10770613B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018510493A (ja) | 2018-04-12 |
| MX2017008785A (es) | 2017-10-19 |
| JP6805155B2 (ja) | 2020-12-23 |
| US20190393375A1 (en) | 2019-12-26 |
| KR102316876B1 (ko) | 2021-10-22 |
| PH12017501266B1 (en) | 2022-11-04 |
| HK1243548A1 (zh) | 2018-07-13 |
| SA517381945B1 (ar) | 2021-01-25 |
| CN107408490B (zh) | 2021-05-25 |
| MY186316A (en) | 2021-07-08 |
| TWI704696B (zh) | 2020-09-11 |
| EP3251146B1 (en) | 2020-12-02 |
| EP3251146A1 (en) | 2017-12-06 |
| WO2016122731A1 (en) | 2016-08-04 |
| US20180019365A1 (en) | 2018-01-18 |
| MY205282A (en) | 2024-10-10 |
| PH12017501266A1 (en) | 2018-02-05 |
| US10439095B2 (en) | 2019-10-08 |
| MX391975B (es) | 2025-03-21 |
| TW201628211A (zh) | 2016-08-01 |
| US10770613B2 (en) | 2020-09-08 |
| EP3251146A4 (en) | 2018-12-19 |
| CN107408490A (zh) | 2017-11-28 |
| SG11201705410PA (en) | 2017-08-30 |
| KR20170108107A (ko) | 2017-09-26 |
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