SA517381945B1 - طرق لتكوين رقاقة شبه موصلة لها إشابة مهيأة - Google Patents
طرق لتكوين رقاقة شبه موصلة لها إشابة مهيأة Download PDFInfo
- Publication number
- SA517381945B1 SA517381945B1 SA517381945A SA517381945A SA517381945B1 SA 517381945 B1 SA517381945 B1 SA 517381945B1 SA 517381945 A SA517381945 A SA 517381945A SA 517381945 A SA517381945 A SA 517381945A SA 517381945 B1 SA517381945 B1 SA 517381945B1
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- Saudi Arabia
- Prior art keywords
- dopant
- wafer
- jah
- concentration
- semiconductor
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
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- H10F77/20—Electrodes
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- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
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- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/52—PV systems with concentrators
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y02E10/547—Monocrystalline silicon PV cells
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| US201562107711P | 2015-01-26 | 2015-01-26 | |
| US201562239115P | 2015-10-08 | 2015-10-08 | |
| PCT/US2015/055460 WO2016122731A1 (en) | 2015-01-26 | 2015-10-14 | Method for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface |
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| SA517381945B1 true SA517381945B1 (ar) | 2021-01-25 |
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| KR102098705B1 (ko) | 2018-07-16 | 2020-04-08 | 한국에너지기술연구원 | P형 및 n형 공존 웨이퍼 제조방법, 이에 의해 제조된 p형 및 n형 공존 웨이퍼, p형 및 n형 공존 웨이퍼를 이용한 태양전지 제조방법 및 이에 의해 제조된 태양전지 |
| KR102477355B1 (ko) | 2018-10-23 | 2022-12-15 | 삼성전자주식회사 | 캐리어 기판 및 이를 이용한 기판 처리 장치 |
| US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| DE102019008927B4 (de) * | 2019-12-20 | 2024-04-11 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
| IL309370B2 (en) | 2021-06-16 | 2025-07-01 | Conti Spe Llc | Mechanically stacked solar transmissive cells or modules |
| CN116632093A (zh) * | 2023-04-21 | 2023-08-22 | 晶科能源(海宁)有限公司 | 太阳能电池及其制备方法、光伏组件 |
| US12414402B1 (en) | 2025-01-03 | 2025-09-09 | Conti Innovation Center, Llc | Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen |
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| JP3616785B2 (ja) | 1996-09-19 | 2005-02-02 | キヤノン株式会社 | 太陽電池の製造方法 |
| NL1026377C2 (nl) * | 2004-06-10 | 2005-12-14 | Stichting Energie | Werkwijze voor het fabriceren van kristallijn-siliciumfolies. |
| US8106481B2 (en) * | 2004-09-03 | 2012-01-31 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
| JP4467392B2 (ja) * | 2004-09-24 | 2010-05-26 | シャープ株式会社 | 結晶シートの製造方法 |
| JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| US7928015B2 (en) | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
| US20080220544A1 (en) * | 2007-03-10 | 2008-09-11 | Bucher Charles E | Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth |
| US20090092745A1 (en) * | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
| WO2010091466A1 (en) * | 2009-02-11 | 2010-08-19 | Newsouth Innovations Pty Limited | Photovoltaic device structure and method |
| US8404970B2 (en) | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
| DE102010024308A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle |
| JP2013015740A (ja) | 2011-07-06 | 2013-01-24 | Japan Display East Co Ltd | 液晶表示装置 |
| JP2013105602A (ja) | 2011-11-11 | 2013-05-30 | Hitachi Ltd | 燃料電池スタック及び燃料電池システム |
| TW201331991A (zh) * | 2012-01-10 | 2013-08-01 | Hitachi Chemical Co Ltd | ｎ型擴散層形成組成物、ｎ型擴散層形成組成物套組、帶有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 |
| WO2013142892A1 (en) * | 2012-03-29 | 2013-10-03 | Newsouth Innovations Pty Limited | Formation of localised molten regions in silicon containing multiple impurity types |
| US9306087B2 (en) * | 2012-09-04 | 2016-04-05 | E I Du Pont De Nemours And Company | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
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| MX2017008785A (es) | 2017-10-19 |
| JP6805155B2 (ja) | 2020-12-23 |
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| KR102316876B1 (ko) | 2021-10-22 |
| PH12017501266B1 (en) | 2022-11-04 |
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| CN107408490B (zh) | 2021-05-25 |
| MY186316A (en) | 2021-07-08 |
| TWI704696B (zh) | 2020-09-11 |
| EP3251146B1 (en) | 2020-12-02 |
| EP3251146A1 (en) | 2017-12-06 |
| WO2016122731A1 (en) | 2016-08-04 |
| US20180019365A1 (en) | 2018-01-18 |
| MY205282A (en) | 2024-10-10 |
| PH12017501266A1 (en) | 2018-02-05 |
| US10439095B2 (en) | 2019-10-08 |
| MX391975B (es) | 2025-03-21 |
| TW201628211A (zh) | 2016-08-01 |
| US10770613B2 (en) | 2020-09-08 |
| EP3251146A4 (en) | 2018-12-19 |
| CN107408490A (zh) | 2017-11-28 |
| SG11201705410PA (en) | 2017-08-30 |
| ES2852725T3 (es) | 2021-09-14 |
| KR20170108107A (ko) | 2017-09-26 |
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