JP2014512703A5 - - Google Patents
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- Publication number
- JP2014512703A5 JP2014512703A5 JP2014508363A JP2014508363A JP2014512703A5 JP 2014512703 A5 JP2014512703 A5 JP 2014512703A5 JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014512703 A5 JP2014512703 A5 JP 2014512703A5
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- advantageously
- group
- group iii
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/098,122 | 2011-04-29 | ||
| US13/098,122 US20120273042A1 (en) | 2011-04-29 | 2011-04-29 | Method for improving the quality of a tunnel junction in a solar cell structure |
| PCT/US2012/030983 WO2012148618A1 (en) | 2011-04-29 | 2012-03-28 | A method for improving the quality of a tunnel junction in a solar cell structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014512703A JP2014512703A (ja) | 2014-05-22 |
| JP2014512703A5 true JP2014512703A5 (enExample) | 2015-05-14 |
Family
ID=45932551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014508363A Withdrawn JP2014512703A (ja) | 2011-04-29 | 2012-03-28 | 太陽電池構造におけるトンネル接合の品質を改善するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120273042A1 (enExample) |
| EP (1) | EP2702617A1 (enExample) |
| JP (1) | JP2014512703A (enExample) |
| CN (1) | CN103503167B (enExample) |
| RU (1) | RU2604476C2 (enExample) |
| WO (1) | WO2012148618A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
| US10593818B2 (en) * | 2016-12-09 | 2020-03-17 | The Boeing Company | Multijunction solar cell having patterned emitter and method of making the solar cell |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437060A (en) * | 1987-08-03 | 1989-02-07 | Nippon Telegraph & Telephone | Semiconductor element |
| JPH03235372A (ja) * | 1990-02-10 | 1991-10-21 | Sumitomo Electric Ind Ltd | 超高効率太陽電池 |
| JPH05201792A (ja) * | 1992-01-27 | 1993-08-10 | Hitachi Ltd | 薄膜結晶製造装置 |
| JPH08162659A (ja) * | 1994-12-06 | 1996-06-21 | Japan Energy Corp | 太陽電池 |
| JPH0964386A (ja) * | 1995-08-18 | 1997-03-07 | Japan Energy Corp | 多接合太陽電池 |
| JPH1012905A (ja) * | 1996-06-27 | 1998-01-16 | Hitachi Ltd | 太陽電池及びその製造方法 |
| JPH1074968A (ja) * | 1996-09-02 | 1998-03-17 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池およびその製造方法 |
| US5944913A (en) * | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
| US6380601B1 (en) * | 1999-03-29 | 2002-04-30 | Hughes Electronics Corporation | Multilayer semiconductor structure with phosphide-passivated germanium substrate |
| US6252287B1 (en) * | 1999-05-19 | 2001-06-26 | Sandia Corporation | InGaAsN/GaAs heterojunction for multi-junction solar cells |
| JP2001111074A (ja) * | 1999-08-03 | 2001-04-20 | Fuji Xerox Co Ltd | 半導体素子及び太陽電池 |
| WO2003044840A1 (en) * | 2001-11-08 | 2003-05-30 | Midwest Research Institute | Reactive codoping of gaalinp compound semiconductors |
| US7122733B2 (en) * | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
| US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| RU2308122C1 (ru) * | 2006-06-05 | 2007-10-10 | Институт физики полупроводников Сибирского отделения Российской академии наук | Каскадный солнечный элемент |
| CN101373798B (zh) * | 2007-08-22 | 2010-07-21 | 中国科学院半导体研究所 | 倒装双结铟镓氮太阳能电池结构 |
| RU2382439C1 (ru) * | 2008-06-05 | 2010-02-20 | Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") | Каскадный фотопреобразователь и способ его изготовления |
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2011
- 2011-04-29 US US13/098,122 patent/US20120273042A1/en not_active Abandoned
-
2012
- 2012-03-28 RU RU2013152841/28A patent/RU2604476C2/ru active
- 2012-03-28 EP EP12712847.8A patent/EP2702617A1/en not_active Withdrawn
- 2012-03-28 JP JP2014508363A patent/JP2014512703A/ja not_active Withdrawn
- 2012-03-28 WO PCT/US2012/030983 patent/WO2012148618A1/en not_active Ceased
- 2012-03-28 CN CN201280020993.8A patent/CN103503167B/zh active Active