CN103503167B - 提高太阳能电池结构中的隧道结的质量的方法 - Google Patents

提高太阳能电池结构中的隧道结的质量的方法 Download PDF

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Publication number
CN103503167B
CN103503167B CN201280020993.8A CN201280020993A CN103503167B CN 103503167 B CN103503167 B CN 103503167B CN 201280020993 A CN201280020993 A CN 201280020993A CN 103503167 B CN103503167 B CN 103503167B
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Prior art keywords
solar cell
tunnel junction
group
group iii
substrate
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Chinese (zh)
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CN103503167A (zh
Inventor
X-Q·刘
C·M·费策尔
D·C·罗
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
CN201280020993.8A 2011-04-29 2012-03-28 提高太阳能电池结构中的隧道结的质量的方法 Active CN103503167B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,122 2011-04-29
US13/098,122 US20120273042A1 (en) 2011-04-29 2011-04-29 Method for improving the quality of a tunnel junction in a solar cell structure
PCT/US2012/030983 WO2012148618A1 (en) 2011-04-29 2012-03-28 A method for improving the quality of a tunnel junction in a solar cell structure

Publications (2)

Publication Number Publication Date
CN103503167A CN103503167A (zh) 2014-01-08
CN103503167B true CN103503167B (zh) 2016-09-14

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CN201280020993.8A Active CN103503167B (zh) 2011-04-29 2012-03-28 提高太阳能电池结构中的隧道结的质量的方法

Country Status (6)

Country Link
US (1) US20120273042A1 (enExample)
EP (1) EP2702617A1 (enExample)
JP (1) JP2014512703A (enExample)
CN (1) CN103503167B (enExample)
RU (1) RU2604476C2 (enExample)
WO (1) WO2012148618A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098818A (zh) * 2016-08-26 2016-11-09 扬州乾照光电有限公司 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
CN101373798A (zh) * 2007-08-22 2009-02-25 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构

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JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
JPH03235372A (ja) * 1990-02-10 1991-10-21 Sumitomo Electric Ind Ltd 超高効率太陽電池
JPH05201792A (ja) * 1992-01-27 1993-08-10 Hitachi Ltd 薄膜結晶製造装置
JPH08162659A (ja) * 1994-12-06 1996-06-21 Japan Energy Corp 太陽電池
JPH0964386A (ja) * 1995-08-18 1997-03-07 Japan Energy Corp 多接合太陽電池
JPH1012905A (ja) * 1996-06-27 1998-01-16 Hitachi Ltd 太陽電池及びその製造方法
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
JP2001111074A (ja) * 1999-08-03 2001-04-20 Fuji Xerox Co Ltd 半導体素子及び太陽電池
WO2003044840A1 (en) * 2001-11-08 2003-05-30 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
US7122733B2 (en) * 2002-09-06 2006-10-17 The Boeing Company Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
RU2308122C1 (ru) * 2006-06-05 2007-10-10 Институт физики полупроводников Сибирского отделения Российской академии наук Каскадный солнечный элемент
RU2382439C1 (ru) * 2008-06-05 2010-02-20 Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") Каскадный фотопреобразователь и способ его изготовления

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
CN101373798A (zh) * 2007-08-22 2009-02-25 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy;Y.G. Hong, et al.;《JOURNAL OF CRYSTAL GROWTH》;20020831;第242卷(第1-2期);第29页左列第1段至第34页左列第2段，图1 *

Also Published As

Publication number Publication date
RU2013152841A (ru) 2015-06-10
US20120273042A1 (en) 2012-11-01
CN103503167A (zh) 2014-01-08
RU2604476C2 (ru) 2016-12-10
WO2012148618A1 (en) 2012-11-01
EP2702617A1 (en) 2014-03-05
JP2014512703A (ja) 2014-05-22

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