JP2014512703A - 太陽電池構造におけるトンネル接合の品質を改善するための方法 - Google Patents
太陽電池構造におけるトンネル接合の品質を改善するための方法 Download PDFInfo
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- JP2014512703A JP2014512703A JP2014508363A JP2014508363A JP2014512703A JP 2014512703 A JP2014512703 A JP 2014512703A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014512703 A JP2014512703 A JP 2014512703A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 59
- 238000000151 deposition Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000005012 migration Effects 0.000 claims description 8
- 238000013508 migration Methods 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (15)
- 太陽電池構造(100)へのIII族の材料の堆積およびV族の材料の堆積を交互に行うことを含む、前記太陽電池構造(100)にトンネル接合(112)を形成する方法。
- 前記III属の材料の堆積およびV属の材料の堆積を交互に行うことが、
前記太陽電池構造(100)へとIII属の材料を堆積させることと、
前記III属の材料の堆積後にV属の材料を堆積させることと
をさらに含む請求項1に記載の方法。 - 前記太陽電池構造(100)の第1の太陽電池(108)へと前記III族の材料を堆積させることをさらに含む請求項1または2に記載の方法。
- 前記太陽電池構造(100)の前記第1の太陽電池(108)へと前記V族の材料を堆積させることをさらに含む請求項3に記載の方法。
- 前記III族の材料および前記V族の材料の堆積の比を制御することをさらに含む請求項1〜4のいずれか一項に記載の方法。
- 前記III族の材料の堆積を交互に行うことが、約1〜1000秒にわたって前記III族および前記V族の材料を堆積させることをさらに含む請求項1〜5のいずれか一項に記載の方法。
- 前記III属の材料が、ホウ素(B)、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、およびタリウム(Tl)のうちの少なくとも1つを含む請求項1〜6のいずれか一項に記載の方法。
- 前記V属の材料が、チッ素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、およびビスマス(Bi)のうちの少なくとも1つを含む請求項1〜7のいずれか一項に記載の方法。
- 基板(102)と、
前記基板(102)の上方に位置する第1の太陽電池(108)と、
前記第1の太陽電池(108)の上方に位置するコンタクト(116)と、
前記第1の太陽電池(108)と前記コンタクト(116)との間の位置に形成されたトンネル接合(112)と
を備えており、
前記トンネル接合(112)が、マイグレーション・エンハンスト・エピタキシャル(MME)法によって形成されている光起電デバイス。 - 前記トンネル接合(112)が、III属およびV属の材料の堆積を交互に行うことからなる前記MEE法によって形成されている請求項9に記載の光起電デバイス。
- 前記III族の材料が、ホウ素(B)、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、およびタリウム(Tl)のうちの少なくとも1つを含む請求項10に記載の光起電デバイス。
- 前記V族の材料が、チッ素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、およびビスマス(Bi)のうちの少なくとも1つを含む請求項10または11に記載の光起電デバイス。
- 前記基板(102)と前記第1の太陽電池(108)との間に位置するバッファ層(106)をさらに備える請求項9〜12のいずれか一項に記載の光起電デバイス。
- 前記バッファ層(106)と前記基板(102)との間に位置する核生成層(104)をさらに備える請求項13に記載の光起電デバイス。
- 前記第1の太陽電池(108)と前記コンタクト(116)との間に位置する第2の太陽電池(114)をさらに備える請求項9〜14のいずれか一項に記載の光起電デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/098,122 | 2011-04-29 | ||
US13/098,122 US20120273042A1 (en) | 2011-04-29 | 2011-04-29 | Method for improving the quality of a tunnel junction in a solar cell structure |
PCT/US2012/030983 WO2012148618A1 (en) | 2011-04-29 | 2012-03-28 | A method for improving the quality of a tunnel junction in a solar cell structure |
Publications (2)
Publication Number | Publication Date |
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JP2014512703A true JP2014512703A (ja) | 2014-05-22 |
JP2014512703A5 JP2014512703A5 (ja) | 2015-05-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014508363A Withdrawn JP2014512703A (ja) | 2011-04-29 | 2012-03-28 | 太陽電池構造におけるトンネル接合の品質を改善するための方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120273042A1 (ja) |
EP (1) | EP2702617A1 (ja) |
JP (1) | JP2014512703A (ja) |
CN (1) | CN103503167B (ja) |
RU (1) | RU2604476C2 (ja) |
WO (1) | WO2012148618A1 (ja) |
Families Citing this family (2)
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CN106098818A (zh) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法 |
US10593818B2 (en) * | 2016-12-09 | 2020-03-17 | The Boeing Company | Multijunction solar cell having patterned emitter and method of making the solar cell |
Citations (10)
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JPS6437060A (en) * | 1987-08-03 | 1989-02-07 | Nippon Telegraph & Telephone | Semiconductor element |
JPH03235372A (ja) * | 1990-02-10 | 1991-10-21 | Sumitomo Electric Ind Ltd | 超高効率太陽電池 |
JPH05201792A (ja) * | 1992-01-27 | 1993-08-10 | Hitachi Ltd | 薄膜結晶製造装置 |
JPH08162659A (ja) * | 1994-12-06 | 1996-06-21 | Japan Energy Corp | 太陽電池 |
JPH0964386A (ja) * | 1995-08-18 | 1997-03-07 | Japan Energy Corp | 多接合太陽電池 |
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WO2003044840A1 (en) * | 2001-11-08 | 2003-05-30 | Midwest Research Institute | Reactive codoping of gaalinp compound semiconductors |
US7122733B2 (en) * | 2002-09-06 | 2006-10-17 | The Boeing Company | Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds |
RU2308122C1 (ru) * | 2006-06-05 | 2007-10-10 | Институт физики полупроводников Сибирского отделения Российской академии наук | Каскадный солнечный элемент |
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-
2011
- 2011-04-29 US US13/098,122 patent/US20120273042A1/en not_active Abandoned
-
2012
- 2012-03-28 JP JP2014508363A patent/JP2014512703A/ja not_active Withdrawn
- 2012-03-28 EP EP12712847.8A patent/EP2702617A1/en not_active Withdrawn
- 2012-03-28 WO PCT/US2012/030983 patent/WO2012148618A1/en active Application Filing
- 2012-03-28 CN CN201280020993.8A patent/CN103503167B/zh active Active
- 2012-03-28 RU RU2013152841/28A patent/RU2604476C2/ru active
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Publication number | Publication date |
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WO2012148618A1 (en) | 2012-11-01 |
RU2604476C2 (ru) | 2016-12-10 |
US20120273042A1 (en) | 2012-11-01 |
EP2702617A1 (en) | 2014-03-05 |
CN103503167A (zh) | 2014-01-08 |
CN103503167B (zh) | 2016-09-14 |
RU2013152841A (ru) | 2015-06-10 |
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