JP2014512703A - 太陽電池構造におけるトンネル接合の品質を改善するための方法 - Google Patents

太陽電池構造におけるトンネル接合の品質を改善するための方法 Download PDF

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JP2014512703A
JP2014512703A JP2014508363A JP2014508363A JP2014512703A JP 2014512703 A JP2014512703 A JP 2014512703A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014508363 A JP2014508363 A JP 2014508363A JP 2014512703 A JP2014512703 A JP 2014512703A
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Prior art keywords
solar cell
group
group iii
tunnel junction
depositing
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Japanese (ja)
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JP2014512703A5 (enExample
Inventor
シン−チュアン リュー，
クリストファー エム． フェッツァー，
ダニエル， シー． ロー，
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
JP2014508363A 2011-04-29 2012-03-28 太陽電池構造におけるトンネル接合の品質を改善するための方法 Withdrawn JP2014512703A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,122 2011-04-29
US13/098,122 US20120273042A1 (en) 2011-04-29 2011-04-29 Method for improving the quality of a tunnel junction in a solar cell structure
PCT/US2012/030983 WO2012148618A1 (en) 2011-04-29 2012-03-28 A method for improving the quality of a tunnel junction in a solar cell structure

Publications (2)

Publication Number Publication Date
JP2014512703A true JP2014512703A (ja) 2014-05-22
JP2014512703A5 JP2014512703A5 (enExample) 2015-05-14

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JP2014508363A Withdrawn JP2014512703A (ja) 2011-04-29 2012-03-28 太陽電池構造におけるトンネル接合の品質を改善するための方法

Country Status (6)

Country Link
US (1) US20120273042A1 (enExample)
EP (1) EP2702617A1 (enExample)
JP (1) JP2014512703A (enExample)
CN (1) CN103503167B (enExample)
RU (1) RU2604476C2 (enExample)
WO (1) WO2012148618A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098818A (zh) * 2016-08-26 2016-11-09 扬州乾照光电有限公司 一种锗基砷化镓多结柔性薄膜太阳电池及其制备方法
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
JPH03235372A (ja) * 1990-02-10 1991-10-21 Sumitomo Electric Ind Ltd 超高効率太陽電池
JPH05201792A (ja) * 1992-01-27 1993-08-10 Hitachi Ltd 薄膜結晶製造装置
JPH08162659A (ja) * 1994-12-06 1996-06-21 Japan Energy Corp 太陽電池
JPH0964386A (ja) * 1995-08-18 1997-03-07 Japan Energy Corp 多接合太陽電池
JPH1012905A (ja) * 1996-06-27 1998-01-16 Hitachi Ltd 太陽電池及びその製造方法
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
JP2001111074A (ja) * 1999-08-03 2001-04-20 Fuji Xerox Co Ltd 半導体素子及び太陽電池
US20040200523A1 (en) * 2003-04-14 2004-10-14 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
JP2005535148A (ja) * 2002-10-31 2005-11-17 エムコア・コーポレイション 高バンドギャップヘテロ接合ミドルセルを有する多重接合ソーラーセル構造の方法および装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944913A (en) * 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
US6380601B1 (en) * 1999-03-29 2002-04-30 Hughes Electronics Corporation Multilayer semiconductor structure with phosphide-passivated germanium substrate
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
WO2003044840A1 (en) * 2001-11-08 2003-05-30 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
US7122733B2 (en) * 2002-09-06 2006-10-17 The Boeing Company Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds
RU2308122C1 (ru) * 2006-06-05 2007-10-10 Институт физики полупроводников Сибирского отделения Российской академии наук Каскадный солнечный элемент
CN101373798B (zh) * 2007-08-22 2010-07-21 中国科学院半导体研究所 倒装双结铟镓氮太阳能电池结构
RU2382439C1 (ru) * 2008-06-05 2010-02-20 Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") Каскадный фотопреобразователь и способ его изготовления

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
JPH03235372A (ja) * 1990-02-10 1991-10-21 Sumitomo Electric Ind Ltd 超高効率太陽電池
JPH05201792A (ja) * 1992-01-27 1993-08-10 Hitachi Ltd 薄膜結晶製造装置
JPH08162659A (ja) * 1994-12-06 1996-06-21 Japan Energy Corp 太陽電池
JPH0964386A (ja) * 1995-08-18 1997-03-07 Japan Energy Corp 多接合太陽電池
JPH1012905A (ja) * 1996-06-27 1998-01-16 Hitachi Ltd 太陽電池及びその製造方法
JPH1074968A (ja) * 1996-09-02 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> 太陽電池およびその製造方法
JP2001111074A (ja) * 1999-08-03 2001-04-20 Fuji Xerox Co Ltd 半導体素子及び太陽電池
JP2005535148A (ja) * 2002-10-31 2005-11-17 エムコア・コーポレイション 高バンドギャップヘテロ接合ミドルセルを有する多重接合ソーラーセル構造の方法および装置
US20040200523A1 (en) * 2003-04-14 2004-10-14 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Y.G.HONG, C.W.TU: "Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 242, JPN6016028007, 2002, pages 29 - 34, XP004366239, ISSN: 0003364220, DOI: 10.1016/S0022-0248(02)01315-5 *
堀越 佳治: ""マイグレーション・エンハンスト・エピタキシーによる ＧａＡｓ，ＡｌＧａＡｓ成長機構"", 応用物理, vol. 第59巻，第１号, JPN6015050978, 1990, pages 27 - 40, ISSN: 0003220072 *
堀越 佳治: "ＭＥＥ成長とその応用", 真空, vol. 第35巻第5号, JPN6016028005, 1992, JP, pages 497 - 504, ISSN: 0003364218 *

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Publication number Publication date
RU2013152841A (ru) 2015-06-10
US20120273042A1 (en) 2012-11-01
CN103503167A (zh) 2014-01-08
RU2604476C2 (ru) 2016-12-10
WO2012148618A1 (en) 2012-11-01
EP2702617A1 (en) 2014-03-05
CN103503167B (zh) 2016-09-14

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