JP2007535806A5 - - Google Patents

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Publication number
JP2007535806A5
JP2007535806A5 JP2007509832A JP2007509832A JP2007535806A5 JP 2007535806 A5 JP2007535806 A5 JP 2007535806A5 JP 2007509832 A JP2007509832 A JP 2007509832A JP 2007509832 A JP2007509832 A JP 2007509832A JP 2007535806 A5 JP2007535806 A5 JP 2007535806A5
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JP
Japan
Prior art keywords
semiconductor
layer
dielectric material
type
semiconductor material
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007509832A
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English (en)
Japanese (ja)
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JP2007535806A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/AU2005/000614 external-priority patent/WO2005106966A1/en
Publication of JP2007535806A publication Critical patent/JP2007535806A/ja
Publication of JP2007535806A5 publication Critical patent/JP2007535806A5/ja
Pending legal-status Critical Current

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JP2007509832A 2004-04-30 2005-04-29 人工アモルファス半導体および太陽電池への適用 Pending JP2007535806A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2004902299A AU2004902299A0 (en) 2004-04-30 Artificial amorphous semiconductors and applications to solar cells
PCT/AU2005/000614 WO2005106966A1 (en) 2004-04-30 2005-04-29 Artificial amorphous semiconductors and applications to solar cells

Publications (2)

Publication Number Publication Date
JP2007535806A JP2007535806A (ja) 2007-12-06
JP2007535806A5 true JP2007535806A5 (enExample) 2008-06-19

Family

ID=35241940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007509832A Pending JP2007535806A (ja) 2004-04-30 2005-04-29 人工アモルファス半導体および太陽電池への適用

Country Status (5)

Country Link
US (1) US20080251116A1 (enExample)
EP (1) EP1751805A4 (enExample)
JP (1) JP2007535806A (enExample)
CN (1) CN1957478A (enExample)
WO (1) WO2005106966A1 (enExample)

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WO2008046147A1 (en) * 2006-10-18 2008-04-24 Newsouth Innovations Pty Limited Up and down conversion using quantum dot arrays
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
US9577137B2 (en) * 2007-01-25 2017-02-21 Au Optronics Corporation Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel
US7880161B2 (en) 2007-02-16 2011-02-01 Mears Technologies, Inc. Multiple-wavelength opto-electronic device including a superlattice
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WO2008124160A2 (en) * 2007-04-09 2008-10-16 The Regents Of The University Of California Low resistance tunnel junctions for high efficiency tandem solar cells
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EP2105968A1 (en) * 2008-03-27 2009-09-30 Atomic Energy Council - Institute of Nuclear Energy Research Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
TWI462307B (zh) * 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
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KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
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US20110214726A1 (en) * 2010-03-02 2011-09-08 Alliance For Sustainable Energy, Llc Ultra- High Solar Conversion Efficiency for Solar Fuels and Solar Electricity via Multiple Exciton Generation in Quantum Dots Coupled with Solar Concentration
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
KR101103330B1 (ko) * 2010-06-25 2012-01-11 한국표준과학연구원 ＩｎＰ의 강제도핑에 의한 고농도 Ｐ 도핑 양자점 태양전지 및 제조방법
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5509059B2 (ja) * 2010-12-22 2014-06-04 国立大学法人 東京大学 太陽電池
JP5568039B2 (ja) * 2011-03-15 2014-08-06 国立大学法人 東京大学 太陽電池
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
JP2014116327A (ja) * 2011-03-31 2014-06-26 Sanyo Electric Co Ltd 光電変換装置
JP5664416B2 (ja) * 2011-03-31 2015-02-04 富士通株式会社 シリコン量子ドット装置とその製造方法
CN102867883B (zh) * 2011-07-08 2015-04-22 茂迪股份有限公司 半导体基材表面结构与形成此表面结构的方法
US8778448B2 (en) * 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
FR2979434B1 (fr) 2011-08-24 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur
JP5732410B2 (ja) * 2012-01-05 2015-06-10 富士フイルム株式会社 量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置
US9583656B2 (en) 2013-02-07 2017-02-28 Sharp Kabushiki Kaisha Photoelectric conversion element
JP6127626B2 (ja) * 2013-03-21 2017-05-17 富士通株式会社 量子ドットアレイデバイスの製造方法
JP6085805B2 (ja) * 2013-06-11 2017-03-01 富士通株式会社 光半導体装置の製造方法
EP3073534A4 (en) * 2013-11-19 2017-06-28 Kyocera Corporation Photoelectric conversion layer and photoelectric conversion device
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP6474618B2 (ja) * 2015-01-06 2019-02-27 シャープ株式会社 光電変換素子
JP6603116B2 (ja) * 2015-11-27 2019-11-06 京セラ株式会社 光電変換装置

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