JP5423952B2 - 光電変換装置および電子機器 - Google Patents
光電変換装置および電子機器 Download PDFInfo
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- JP5423952B2 JP5423952B2 JP2009050922A JP2009050922A JP5423952B2 JP 5423952 B2 JP5423952 B2 JP 5423952B2 JP 2009050922 A JP2009050922 A JP 2009050922A JP 2009050922 A JP2009050922 A JP 2009050922A JP 5423952 B2 JP5423952 B2 JP 5423952B2
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- Prior art keywords
- photoelectric conversion
- layer
- conversion device
- core
- band gap
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- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/00—Nanotechnology
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- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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Description
図1は、本実施の形態の量子ドット型の光電変換装置(光電変換素子、太陽電池)の構成を示す断面図である。図2は、図1の量子ドットdの構成を示す断面図である。
光電変換においては、光のエネルギーを吸収した電子(キャリア)が、バンドギャップEgを越えて価電子帯と伝導帯の間を遷移し、電気エネルギー(電力)として取り出される。一般的に、半導体ナノ粒子では粒径が小さくなると、バンドギャップが大きくなることが知られている(特許文献1参照)。これを量子サイズ効果と呼び、、これにより、例えば、太陽光スペクトルにおいてエネルギーの大きな紫外光領域、可視光領域や赤外光領域などの特定の波長(例えば、400nm〜800nm)にあわせてバンドギャップを調整することができる。その結果、光を効率良く電気エネルギーに変換することができる。また、バンドギャップの異なる光電変換部を積層することにより、可視光領域や赤外光領域などに限らず太陽光スペクトルの各種波長の光を効率良く電気エネルギーに変換することができる。
図3に示すように、バルクの半導体においては、キャリア(電子)は、光エネルギー(E=hν=hc/λ、h:プランク定数、ν:振動数、c:光の速さ、λ:波長)を受け、価電子帯に遷移し、電気エネルギーとして取り出される。ここで、バンドギャップEgより光エネルギーhνが大きい場合(hν>Eg)、キャリアは価電子帯の上部まで遷移するものの、Egを超えた余分なエネルギーは速やかに格子系に熱として移動して、より安定的な価電子帯の下部まで移動する。つまり、Egを超えたエネルギーは熱として失われる。したがって、1つの光子によって1つのキャリアしか生成できない。なお、励起された電子に対しホールは残存するため、これらの対をエキシトン(exciton、励起子)という。
<光電変換装置の製造方法>
次いで、上記光電変換装置の製造方法について説明する。例えば、コア材料としてGeを、シェル材料としてSiO2を、マトリクス材料としてアモルファスシリコンを用いた上記光電変換装置を例に説明する。図14は、本実施の形態の光電変換装置の製造工程を示す断面図である。
上記光電変換装置は、各種電子機器に組み込むことができる。適用できる電子機器に制限はないがその一例について説明する。
Claims (5)
- 第1材料中に複数のナノ粒子が分散状態で含有した光電変換層を有する光電変換装置であって、
前記ナノ粒子は、粒状の第2材料および前記第2材料を被覆する第3材料を有し、
前記第3材料のバンドギャップE3は、前記第1材料のバンドギャップE1より大きく、かつ、前記第2材料のバンドギャップE2より大きく、
前記第1材料は、アモルファスシリコン、微結晶シリコン、多結晶シリコン、単結晶シリコン、またはこれらの複合体のいずれかであり、
前記第2材料は、Ge、PbSおよびPbSeのいずれかであり、
前記第3材料は、絶縁体であり、
前記複数のナノ粒子は、前記光電変換層の中に不規則な配置で分散している、
光電変換装置。 - 前記第3材料は、酸化シリコンである請求項1に記載の光電変換装置。
- 前記第2材料の吸収係数が、前記第1材料の吸収係数より大きいことを特徴とする請求項1または2に記載の光電変換装置。
- 更に、p型半導体層およびn型半導体層を有し、
前記p型半導体層と前記n型半導体層との間に前記光電変換層を有する、
請求項1乃至3のいずれか一項に記載の光電変換装置。 - 請求項1乃至4のいずれか一項に記載の光電変換装置を有することを特徴とする電子機器。
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JP2009050922A JP5423952B2 (ja) | 2009-03-04 | 2009-03-04 | 光電変換装置および電子機器 |
US12/715,567 US8759670B2 (en) | 2009-03-04 | 2010-03-02 | Photovoltaic converter device and electronic device |
US14/273,834 US20140246081A1 (en) | 2009-03-04 | 2014-05-09 | Photovoltaic converter device and electronic device |
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JP2011176225A (ja) * | 2010-02-25 | 2011-09-08 | Seiko Epson Corp | 光学変換装置及び同装置を含む電子機器 |
JP5256268B2 (ja) * | 2010-10-21 | 2013-08-07 | シャープ株式会社 | 太陽電池 |
EP2636069B1 (en) * | 2010-11-03 | 2021-07-07 | L. Pierre De Rochemont | Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof |
KR20120084177A (ko) * | 2011-01-19 | 2012-07-27 | 삼성전자주식회사 | 실리콘 양자점층 형성 방법 및 이를 이용하여 제조한 장치들 |
JP2014116327A (ja) * | 2011-03-31 | 2014-06-26 | Sanyo Electric Co Ltd | 光電変換装置 |
KR101262501B1 (ko) | 2011-04-04 | 2013-05-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR20140041605A (ko) * | 2011-06-13 | 2014-04-04 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 양자 나노 도트, 2차원 양자 나노 도트 어레이 및 이것을 사용한 반도체 장치 및 제조 방법 |
US8685781B2 (en) * | 2011-07-20 | 2014-04-01 | Alliance For Sustainable Energy, Llc | Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby |
JP2013046008A (ja) * | 2011-08-26 | 2013-03-04 | Fujifilm Corp | 量子ドット構造体、波長変換素子、光光変換装置および光電変換装置 |
JP5607589B2 (ja) * | 2011-08-26 | 2014-10-15 | トヨタ自動車株式会社 | 量子ドット配列材料並びにこれを用いた光電変換素子及び波長変換素子 |
KR101353350B1 (ko) * | 2011-11-09 | 2014-01-21 | 한국표준과학연구원 | 광대역 파장 흡수 및 에너지변환을 이용한 고효율 태양전지 |
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JP6099435B2 (ja) * | 2013-03-05 | 2017-03-22 | シャープ株式会社 | コアシェル粒子、光電変換層および光電変換素子 |
JP6336731B2 (ja) * | 2013-09-25 | 2018-06-06 | 京セラ株式会社 | 太陽電池 |
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JP6425448B2 (ja) | 2014-07-31 | 2018-11-21 | キヤノン株式会社 | 光電変換装置、および、撮像システム |
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JP6368594B2 (ja) * | 2014-09-09 | 2018-08-01 | シャープ株式会社 | 光電変換素子 |
US20180254363A1 (en) * | 2015-08-31 | 2018-09-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
KR20180136952A (ko) * | 2016-04-19 | 2018-12-26 | 트리나미엑스 게엠베하 | 적어도 하나의 물체를 광학적으로 검출하기 위한 검출기 |
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