JP2007535806A - 人工アモルファス半導体および太陽電池への適用 - Google Patents

人工アモルファス半導体および太陽電池への適用 Download PDF

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Publication number
JP2007535806A
JP2007535806A JP2007509832A JP2007509832A JP2007535806A JP 2007535806 A JP2007535806 A JP 2007535806A JP 2007509832 A JP2007509832 A JP 2007509832A JP 2007509832 A JP2007509832 A JP 2007509832A JP 2007535806 A JP2007535806 A JP 2007535806A
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layer
dielectric material
semiconductor
silicon
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JP2007535806A5 (enExample
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マーチン・アンドリュー・グリーン
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ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Photovoltaic Devices (AREA)
JP2007509832A 2004-04-30 2005-04-29 人工アモルファス半導体および太陽電池への適用 Pending JP2007535806A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2004902299A AU2004902299A0 (en) 2004-04-30 Artificial amorphous semiconductors and applications to solar cells
PCT/AU2005/000614 WO2005106966A1 (en) 2004-04-30 2005-04-29 Artificial amorphous semiconductors and applications to solar cells

Publications (2)

Publication Number Publication Date
JP2007535806A true JP2007535806A (ja) 2007-12-06
JP2007535806A5 JP2007535806A5 (enExample) 2008-06-19

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JP2007509832A Pending JP2007535806A (ja) 2004-04-30 2005-04-29 人工アモルファス半導体および太陽電池への適用

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Country Link
US (1) US20080251116A1 (enExample)
EP (1) EP1751805A4 (enExample)
JP (1) JP2007535806A (enExample)
CN (1) CN1957478A (enExample)
WO (1) WO2005106966A1 (enExample)

Cited By (19)

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JP2009516911A (ja) * 2005-11-21 2009-04-23 サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク（セエヌエールエス） 電気ポンピングされたｎｄ３＋ドープ型固体レーザー
JP2009520357A (ja) * 2005-12-16 2009-05-21 ザ トラスティーズ オブ プリンストン ユニヴァシティ トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
JP2012089756A (ja) * 2010-10-21 2012-05-10 Sharp Corp 太陽電池
JP2012129533A (ja) * 2007-01-25 2012-07-05 Au Optronics Corp 太陽電池
WO2012131826A1 (ja) * 2011-03-31 2012-10-04 三洋電機株式会社 光電変換装置
JP2012216600A (ja) * 2011-03-31 2012-11-08 Fujitsu Ltd シリコン量子ドット装置とその製造方法
WO2013103047A1 (ja) * 2012-01-05 2013-07-11 富士フイルム株式会社 量子ドット構造体および量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置
JP2013530539A (ja) * 2010-06-25 2013-07-25 コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス Ｉｎｐの強制ドーピングによる高濃度ｐドープ量子ドット太陽電池及び製造方法
US8759670B2 (en) 2009-03-04 2014-06-24 Seiko Epson Corporation Photovoltaic converter device and electronic device
WO2014122861A1 (ja) * 2013-02-07 2014-08-14 シャープ株式会社 光電変換素子
JP2014183268A (ja) * 2013-03-21 2014-09-29 Fujitsu Ltd 量子ドットアレイデバイスの製造方法
JP2014209651A (ja) * 2014-06-24 2014-11-06 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2014241324A (ja) * 2013-06-11 2014-12-25 富士通株式会社 光半導体装置の製造方法
WO2015076300A1 (ja) * 2013-11-19 2015-05-28 京セラ株式会社 光電変換層および光電変換装置
JP2016127183A (ja) * 2015-01-06 2016-07-11 シャープ株式会社 光電変換素子
JP2017098496A (ja) * 2015-11-27 2017-06-01 京セラ株式会社 光電変換装置

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WO2006125272A1 (en) * 2005-05-27 2006-11-30 Newsouth Innovations Pty Limited Resonant defect enhancement of current transport in semiconducting superlattices
US20070166916A1 (en) * 2006-01-14 2007-07-19 Sunvolt Nanosystems, Inc. Nanostructures-based optoelectronics device
TWI312190B (en) * 2006-05-23 2009-07-11 Art Talent Ind Limite Novel nano-crystal device for image sensing
WO2008046147A1 (en) * 2006-10-18 2008-04-24 Newsouth Innovations Pty Limited Up and down conversion using quantum dot arrays
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US9577137B2 (en) * 2007-01-25 2017-02-21 Au Optronics Corporation Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel
US7880161B2 (en) 2007-02-16 2011-02-01 Mears Technologies, Inc. Multiple-wavelength opto-electronic device including a superlattice
WO2008101232A1 (en) * 2007-02-16 2008-08-21 Mears Technologies, Inc. Multiple-wavelength opto- electronic device including a semiconductor atomic superlattice and associated fabrication methods
US20090050201A1 (en) * 2007-07-17 2009-02-26 The Research Foundation Of State University Of New York Solar cell
EP2105968A1 (en) * 2008-03-27 2009-09-30 Atomic Energy Council - Institute of Nuclear Energy Research Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
TWI462307B (zh) * 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
GB0820684D0 (en) 2008-11-12 2008-12-17 Silicon Cpv Plc Photovoltaic solar cells
KR101717409B1 (ko) * 2009-03-18 2017-03-16 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 태양 전지 패널의 인라인 제조 방법
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
DE102009029017A1 (de) * 2009-08-31 2011-03-03 Robert Bosch Gmbh Halbleiter-Schichtmaterial und Heteroübergangs-Solarzelle
US20110214726A1 (en) * 2010-03-02 2011-09-08 Alliance For Sustainable Energy, Llc Ultra- High Solar Conversion Efficiency for Solar Fuels and Solar Electricity via Multiple Exciton Generation in Quantum Dots Coupled with Solar Concentration
JP5509059B2 (ja) * 2010-12-22 2014-06-04 国立大学法人 東京大学 太陽電池
JP5568039B2 (ja) * 2011-03-15 2014-08-06 国立大学法人 東京大学 太陽電池
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
CN102867883B (zh) * 2011-07-08 2015-04-22 茂迪股份有限公司 半导体基材表面结构与形成此表面结构的方法
US8778448B2 (en) * 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
FR2979434B1 (fr) 2011-08-24 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur

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JP2002141531A (ja) * 2000-11-01 2002-05-17 Sharp Corp 太陽電池およびその製造方法
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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009516911A (ja) * 2005-11-21 2009-04-23 サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク（セエヌエールエス） 電気ポンピングされたｎｄ３＋ドープ型固体レーザー
JP2009520357A (ja) * 2005-12-16 2009-05-21 ザ トラスティーズ オブ プリンストン ユニヴァシティ トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置
JP2012129533A (ja) * 2007-01-25 2012-07-05 Au Optronics Corp 太陽電池
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
US8759670B2 (en) 2009-03-04 2014-06-24 Seiko Epson Corporation Photovoltaic converter device and electronic device
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
JP2013530539A (ja) * 2010-06-25 2013-07-25 コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス Ｉｎｐの強制ドーピングによる高濃度ｐドープ量子ドット太陽電池及び製造方法
JP2012089756A (ja) * 2010-10-21 2012-05-10 Sharp Corp 太陽電池
WO2012131826A1 (ja) * 2011-03-31 2012-10-04 三洋電機株式会社 光電変換装置
JP2012216600A (ja) * 2011-03-31 2012-11-08 Fujitsu Ltd シリコン量子ドット装置とその製造方法
JP2013140900A (ja) * 2012-01-05 2013-07-18 Fujifilm Corp 量子ドット構造体および量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置
WO2013103047A1 (ja) * 2012-01-05 2013-07-11 富士フイルム株式会社 量子ドット構造体および量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置
WO2014122861A1 (ja) * 2013-02-07 2014-08-14 シャープ株式会社 光電変換素子
JPWO2014122861A1 (ja) * 2013-02-07 2017-01-26 シャープ株式会社 光電変換素子
US9583656B2 (en) 2013-02-07 2017-02-28 Sharp Kabushiki Kaisha Photoelectric conversion element
JP2014183268A (ja) * 2013-03-21 2014-09-29 Fujitsu Ltd 量子ドットアレイデバイスの製造方法
JP2014241324A (ja) * 2013-06-11 2014-12-25 富士通株式会社 光半導体装置の製造方法
WO2015076300A1 (ja) * 2013-11-19 2015-05-28 京セラ株式会社 光電変換層および光電変換装置
JPWO2015076300A1 (ja) * 2013-11-19 2017-03-16 京セラ株式会社 光電変換層および光電変換装置
JP2014209651A (ja) * 2014-06-24 2014-11-06 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2016127183A (ja) * 2015-01-06 2016-07-11 シャープ株式会社 光電変換素子
JP2017098496A (ja) * 2015-11-27 2017-06-01 京セラ株式会社 光電変換装置

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Publication number Publication date
CN1957478A (zh) 2007-05-02
US20080251116A1 (en) 2008-10-16
EP1751805A4 (en) 2007-07-04
EP1751805A1 (en) 2007-02-14
WO2005106966A1 (en) 2005-11-10

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