JP2010534922A - 高効率の縦列太陽電池用の低抵抗トンネル接合 - Google Patents
高効率の縦列太陽電池用の低抵抗トンネル接合 Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 8
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 238000010276 construction Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 82
- 239000000203 mixture Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 7
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
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- 238000001228 spectrum Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 210000004692 intercellular junction Anatomy 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
Description
ここに記載されクレームされた発明は、契約No.DE−AC02−05CH11231に従って米国エネルギー省によって提供された資金を一部利用してなされた。政府は本発明に一定の権利を持っている。
ここで用いられる「光電池」という用語は、光子を電気に変換することができるあらゆる半導体p/n接合を含む。これは、可視光を電気に変換する周知の光電池と、長波長光子あるいは熱光子を電気に変換する熱光電池を非限定的に含む。
例として挙げられ、本発明をそれだけに限定すると意図しない以下の詳細な説明は、添付図と併せて最もよく理解される。
n−InAsSb(コンタクト層) 1×1018cm−3 100nm
n−InAsSb 1×1017cm−3 500nm
p−GaSb 1×1017cm−3 500nm
p−GaSb(基板) 2×1017cm−3 1000nm
Claims (12)
- 第1材料からなる第1光電池と、
第2材料からなり、前記第1光電池に直列接続した第2光電池と、を備え、
前記第2材料に隣接する前記第1材料の伝導帯エッジは、前記材料に隣接する前記第2材料の価電子帯エッジより大きくても0.1eVだけ高い、半導体構造。 - 前記第1光電池の前記第1材料がIn1−xAlxNまたはIn1−yGayNからなり、前記第2光電池の前記第2材料がシリコンまたはゲルマニウムからなる請求項1に記載の半導体構造。
- 前記第1光電池の前記第1材料がInAsからなり、前記第2光電池の前記第2材料がGaSbからなる請求項1に記載の半導体構造。
- 前記第1光電池の前記第1材料がInAsSbからなり、前記第2光電池の前記第2材料がGaAsSbからなる請求項1に記載の半導体構造。
- p型シリコン層と、
前記p型シリコン層に接するn型半導体窒化物層と、を備え、
前記n型半導体窒化物層は、前記p型シリコン層の価電子帯エッジより大きくても0.1eVだけ高い伝導帯エッジを有する、半導体構造。 - 前記半導体構造の電圧電流特性が対称である請求項5に記載の半導体構造。
- 前記p型シリコン層と前記n型半導体窒化物層とによって形成される接合が、当該シリコンと当該窒化物との直列抵抗と実質的に等しい抵抗を有する請求項5に記載の構造。
- 前記n型半導体窒化物が、In1−xAlxNとIn1−yGayNからなる群から選択される請求項5に記載の半導体構造。
- xが0.2と0.6の間とであり、yが0.4と0.6との間である請求項8に記載の半導体構造。
- 前記p型シリコン層が(111)シリコンである請求項5に記載の半導体構造。
- 前記n型半導体窒化物層に接するp型半導体窒化物層と、前記p型シリコン層に接するn型シリコン層をさらに備える請求項5に記載の半導体構造。
- 前記n型半導体窒化物層が第1光電池の一部であり、前記p型シリコン層が第2光電池の一部であり、前記第1光電池と前記第2光電池が互いに直列接続している請求項5に記載の半導体構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91073407P | 2007-04-09 | 2007-04-09 | |
PCT/US2008/004572 WO2008124160A2 (en) | 2007-04-09 | 2008-04-09 | Low resistance tunnel junctions for high efficiency tandem solar cells |
Publications (1)
Publication Number | Publication Date |
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JP2010534922A true JP2010534922A (ja) | 2010-11-11 |
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Family Applications (1)
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JP2010503044A Pending JP2010534922A (ja) | 2007-04-09 | 2008-04-09 | 高効率の縦列太陽電池用の低抵抗トンネル接合 |
Country Status (6)
Country | Link |
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US (1) | US20100095998A1 (ja) |
EP (1) | EP2135290A4 (ja) |
JP (1) | JP2010534922A (ja) |
CN (1) | CN101675527A (ja) |
TW (1) | TW200849625A (ja) |
WO (1) | WO2008124160A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012190990A (ja) * | 2011-03-10 | 2012-10-04 | Nippon Telegr & Teleph Corp <Ntt> | タンデム太陽電池セル |
JP2014220350A (ja) * | 2013-05-08 | 2014-11-20 | 日本電信電話株式会社 | 多接合太陽電池およびその製造方法 |
Families Citing this family (12)
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WO2011049529A1 (en) * | 2009-10-22 | 2011-04-28 | Sol Voltaics Ab | Nanowire tunnel diode and method for making the same |
TWI411116B (zh) * | 2009-11-17 | 2013-10-01 | Epistar Corp | 一種高效率太陽能電池 |
CN102097499B (zh) * | 2009-12-14 | 2015-02-18 | 晶元光电股份有限公司 | 太阳能电池 |
CN101908569B (zh) * | 2010-07-26 | 2012-02-15 | 河南阿格斯新能源有限公司 | 一种太阳能电池 |
US20120103419A1 (en) * | 2010-10-27 | 2012-05-03 | The Regents Of The University Of California | Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material |
JP5469145B2 (ja) * | 2011-10-11 | 2014-04-09 | 日本電信電話株式会社 | タンデム太陽電池セルおよびその製造方法 |
CN103187458B (zh) * | 2011-12-29 | 2016-05-18 | 上海箩箕技术有限公司 | 太阳能电池及其制作方法 |
CN103325878B (zh) * | 2013-05-31 | 2015-12-23 | 西安电子科技大学 | 一种p-i-n型InGaN/p-n型Si双结叠层太阳电池及其制备方法 |
US9136408B2 (en) * | 2013-11-26 | 2015-09-15 | Hunt Energy Enterprises, Llc | Perovskite and other solar cell materials |
TWI596791B (zh) * | 2015-12-07 | 2017-08-21 | 財團法人工業技術研究院 | 太陽能電池模組 |
IT201600076708A1 (it) * | 2016-07-21 | 2018-01-21 | Univ Degli Studi Di Milano Bicocca | Light-driven water splitting device for solar hydrogen generation and method for fabricating the same/dispositivo di scissione di acqua determinante da luce per la generazione di idrogeno solare e metodo per la fabbricazione dello stesso |
EP3566249B1 (en) | 2017-01-05 | 2023-11-29 | Brilliant Light Power, Inc. | Extreme and deep ultraviolet photovoltaic cell |
Citations (5)
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JPS59175170A (ja) * | 1983-03-24 | 1984-10-03 | Yoshihiro Hamakawa | タンデム型太陽電池 |
JPS60249376A (ja) * | 1984-04-27 | 1985-12-10 | スコツト・ウイードマン | 光電池及びその製造方法 |
JPS6348197B2 (ja) * | 1979-03-20 | 1988-09-28 | Seisan Gijutsu Shinko Kyokai | |
JPH07240531A (ja) * | 1993-12-20 | 1995-09-12 | Kurisutaru Device:Kk | 太陽電池およびその製造方法、並びに多層薄膜形成方法 |
JP2007535806A (ja) * | 2004-04-30 | 2007-12-06 | ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド | 人工アモルファス半導体および太陽電池への適用 |
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US6660928B1 (en) * | 2002-04-02 | 2003-12-09 | Essential Research, Inc. | Multi-junction photovoltaic cell |
TWI240439B (en) * | 2003-09-24 | 2005-09-21 | Sanken Electric Co Ltd | Nitride semiconductor device and manufacturing method thereof |
US7902453B2 (en) * | 2005-07-27 | 2011-03-08 | Rensselaer Polytechnic Institute | Edge illumination photovoltaic devices and methods of making same |
US7629532B2 (en) * | 2006-12-29 | 2009-12-08 | Sundiode, Inc. | Solar cell having active region with nanostructures having energy wells |
-
2008
- 2008-04-09 TW TW097112742A patent/TW200849625A/zh unknown
- 2008-04-09 JP JP2010503044A patent/JP2010534922A/ja active Pending
- 2008-04-09 CN CN200880005279A patent/CN101675527A/zh active Pending
- 2008-04-09 US US12/528,394 patent/US20100095998A1/en not_active Abandoned
- 2008-04-09 EP EP08742676A patent/EP2135290A4/en not_active Withdrawn
- 2008-04-09 WO PCT/US2008/004572 patent/WO2008124160A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348197B2 (ja) * | 1979-03-20 | 1988-09-28 | Seisan Gijutsu Shinko Kyokai | |
JPS59175170A (ja) * | 1983-03-24 | 1984-10-03 | Yoshihiro Hamakawa | タンデム型太陽電池 |
JPS60249376A (ja) * | 1984-04-27 | 1985-12-10 | スコツト・ウイードマン | 光電池及びその製造方法 |
JPH07240531A (ja) * | 1993-12-20 | 1995-09-12 | Kurisutaru Device:Kk | 太陽電池およびその製造方法、並びに多層薄膜形成方法 |
JP2007535806A (ja) * | 2004-04-30 | 2007-12-06 | ニューサウス・イノヴェイションズ・ピーティーワイ・リミテッド | 人工アモルファス半導体および太陽電池への適用 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012190990A (ja) * | 2011-03-10 | 2012-10-04 | Nippon Telegr & Teleph Corp <Ntt> | タンデム太陽電池セル |
JP2014220350A (ja) * | 2013-05-08 | 2014-11-20 | 日本電信電話株式会社 | 多接合太陽電池およびその製造方法 |
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EP2135290A4 (en) | 2011-04-27 |
WO2008124160A3 (en) | 2008-12-24 |
TW200849625A (en) | 2008-12-16 |
WO2008124160A2 (en) | 2008-10-16 |
EP2135290A2 (en) | 2009-12-23 |
CN101675527A (zh) | 2010-03-17 |
US20100095998A1 (en) | 2010-04-22 |
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