CN1957478A - 人造无定形半导体及其在太阳能电池中的应用 - Google Patents

人造无定形半导体及其在太阳能电池中的应用 Download PDF

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Publication number
CN1957478A
CN1957478A CNA2005800139259A CN200580013925A CN1957478A CN 1957478 A CN1957478 A CN 1957478A CN A2005800139259 A CNA2005800139259 A CN A2005800139259A CN 200580013925 A CN200580013925 A CN 200580013925A CN 1957478 A CN1957478 A CN 1957478A
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semiconductor
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马丁·安德鲁·格林
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NewSouth Innovations Pty Ltd
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NewSouth Innovations Pty Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)
CNA2005800139259A 2004-04-30 2005-04-29 人造无定形半导体及其在太阳能电池中的应用 Pending CN1957478A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2004902299A AU2004902299A0 (en) 2004-04-30 Artificial amorphous semiconductors and applications to solar cells
AU2004902299 2004-04-30

Publications (1)

Publication Number Publication Date
CN1957478A true CN1957478A (zh) 2007-05-02

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US (1) US20080251116A1 (enExample)
EP (1) EP1751805A4 (enExample)
JP (1) JP2007535806A (enExample)
CN (1) CN1957478A (enExample)
WO (1) WO2005106966A1 (enExample)

Cited By (4)

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CN102576744A (zh) * 2009-08-31 2012-07-11 罗伯特·博世有限公司 半导体层材料和异质结太阳能电池
CN102867883A (zh) * 2011-07-08 2013-01-09 茂迪股份有限公司 半导体基材表面结构与形成此表面结构的方法
CN102959722A (zh) * 2010-06-25 2013-03-06 韩国标准科学研究院 Inp强制掺杂的高浓度掺p量子点太阳能电池及制造方法
CN105723521A (zh) * 2013-11-19 2016-06-29 京瓷株式会社 光电转换层以及光电转换装置

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WO2006125272A1 (en) * 2005-05-27 2006-11-30 Newsouth Innovations Pty Limited Resonant defect enhancement of current transport in semiconducting superlattices
US20100034232A1 (en) * 2005-11-21 2010-02-11 Centre National De La Recherche Scientifique-Cnrs Electrically pumped nd3+ doped solid laser
US20070137693A1 (en) * 2005-12-16 2007-06-21 Forrest Stephen R Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix
US20070166916A1 (en) * 2006-01-14 2007-07-19 Sunvolt Nanosystems, Inc. Nanostructures-based optoelectronics device
TWI312190B (en) * 2006-05-23 2009-07-11 Art Talent Ind Limite Novel nano-crystal device for image sensing
WO2008046147A1 (en) * 2006-10-18 2008-04-24 Newsouth Innovations Pty Limited Up and down conversion using quantum dot arrays
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US9577137B2 (en) * 2007-01-25 2017-02-21 Au Optronics Corporation Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
WO2008101232A1 (en) * 2007-02-16 2008-08-21 Mears Technologies, Inc. Multiple-wavelength opto- electronic device including a semiconductor atomic superlattice and associated fabrication methods
US7880161B2 (en) 2007-02-16 2011-02-01 Mears Technologies, Inc. Multiple-wavelength opto-electronic device including a superlattice
US20100095998A1 (en) * 2007-04-09 2010-04-22 The Regents Of The University Of California Low resistance tunnel junctions for high efficiency tanden solar cells
US20090050201A1 (en) * 2007-07-17 2009-02-26 The Research Foundation Of State University Of New York Solar cell
EP2105968A1 (en) * 2008-03-27 2009-09-30 Atomic Energy Council - Institute of Nuclear Energy Research Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
TWI462307B (zh) * 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
GB0820684D0 (en) 2008-11-12 2008-12-17 Silicon Cpv Plc Photovoltaic solar cells
JP5423952B2 (ja) 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
EP3249699B1 (en) * 2009-03-18 2020-04-15 Evatec AG Method of inline manufacturing a solar cell panel
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
US20110214726A1 (en) * 2010-03-02 2011-09-08 Alliance For Sustainable Energy, Llc Ultra- High Solar Conversion Efficiency for Solar Fuels and Solar Electricity via Multiple Exciton Generation in Quantum Dots Coupled with Solar Concentration
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5509059B2 (ja) * 2010-12-22 2014-06-04 国立大学法人 東京大学 太陽電池
JP5568039B2 (ja) * 2011-03-15 2014-08-06 国立大学法人 東京大学 太陽電池
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
JP2014116327A (ja) * 2011-03-31 2014-06-26 Sanyo Electric Co Ltd 光電変換装置
JP5664416B2 (ja) * 2011-03-31 2015-02-04 富士通株式会社 シリコン量子ドット装置とその製造方法
US8778448B2 (en) * 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
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JP5732410B2 (ja) * 2012-01-05 2015-06-10 富士フイルム株式会社 量子ドット構造体の形成方法ならびに波長変換素子、光光変換装置および光電変換装置
JP6355085B2 (ja) * 2013-02-07 2018-07-11 シャープ株式会社 光電変換素子
JP6127626B2 (ja) * 2013-03-21 2017-05-17 富士通株式会社 量子ドットアレイデバイスの製造方法
JP6085805B2 (ja) * 2013-06-11 2017-03-01 富士通株式会社 光半導体装置の製造方法
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
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JP6603116B2 (ja) * 2015-11-27 2019-11-06 京セラ株式会社 光電変換装置

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Publication number Priority date Publication date Assignee Title
CN102576744A (zh) * 2009-08-31 2012-07-11 罗伯特·博世有限公司 半导体层材料和异质结太阳能电池
CN102576744B (zh) * 2009-08-31 2016-02-10 罗伯特·博世有限公司 半导体层材料和异质结太阳能电池
CN102959722A (zh) * 2010-06-25 2013-03-06 韩国标准科学研究院 Inp强制掺杂的高浓度掺p量子点太阳能电池及制造方法
CN102959722B (zh) * 2010-06-25 2015-10-07 韩国标准科学研究院 Inp强制掺杂的高浓度掺p量子点太阳能电池及制造方法
CN102867883A (zh) * 2011-07-08 2013-01-09 茂迪股份有限公司 半导体基材表面结构与形成此表面结构的方法
CN102867883B (zh) * 2011-07-08 2015-04-22 茂迪股份有限公司 半导体基材表面结构与形成此表面结构的方法
CN105723521A (zh) * 2013-11-19 2016-06-29 京瓷株式会社 光电转换层以及光电转换装置
CN105723521B (zh) * 2013-11-19 2018-01-23 京瓷株式会社 光电转换装置

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WO2005106966A1 (en) 2005-11-10
EP1751805A1 (en) 2007-02-14
US20080251116A1 (en) 2008-10-16
EP1751805A4 (en) 2007-07-04
JP2007535806A (ja) 2007-12-06

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