CN103700713A - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
- Publication number
- CN103700713A CN103700713A CN201310450083.XA CN201310450083A CN103700713A CN 103700713 A CN103700713 A CN 103700713A CN 201310450083 A CN201310450083 A CN 201310450083A CN 103700713 A CN103700713 A CN 103700713A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- semiconductor substrate
- passivating film
- conductivity type
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 82
- 230000003667 anti-reflective effect Effects 0.000 description 37
- 239000000463 material Substances 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 238000005187 foaming Methods 0.000 description 9
- -1 wherein Chemical compound 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000001875 compounds Chemical group 0.000 description 5
- 239000006071 cream Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0108061 | 2012-09-27 | ||
KR1020120108061A KR101889775B1 (ko) | 2012-09-27 | 2012-09-27 | 태양 전지 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103700713A true CN103700713A (zh) | 2014-04-02 |
CN103700713B CN103700713B (zh) | 2016-10-12 |
Family
ID=49223526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310450083.XA Active CN103700713B (zh) | 2012-09-27 | 2013-09-27 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9269839B2 (zh) |
EP (1) | EP2713403B1 (zh) |
JP (1) | JP2014072530A (zh) |
KR (1) | KR101889775B1 (zh) |
CN (1) | CN103700713B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108336105A (zh) * | 2018-04-04 | 2018-07-27 | 武汉新芯集成电路制造有限公司 | 一种图像传感器及其器件邻近结构 |
CN110943146A (zh) * | 2019-12-16 | 2020-03-31 | 通威太阳能(安徽)有限公司 | 一种perc太阳能电池的镀膜方法、制作方法及perc太阳能电池 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8597970B2 (en) | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
KR102244604B1 (ko) * | 2014-08-14 | 2021-04-26 | 엘지전자 주식회사 | 태양 전지 |
US9837576B2 (en) | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9525083B2 (en) | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US11355657B2 (en) | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
CN107851672B (zh) | 2015-06-30 | 2020-05-19 | 夏普株式会社 | 光电转换元件 |
JP6198996B1 (ja) * | 2016-01-13 | 2017-09-20 | 三菱電機株式会社 | 太陽電池および太陽電池を生産する方法 |
US9502601B1 (en) | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
US20180138328A1 (en) * | 2016-11-11 | 2018-05-17 | Sunpower Corporation | Uv-curing of light-receiving surfaces of solar cells |
TWI688109B (zh) * | 2018-10-26 | 2020-03-11 | 財團法人工業技術研究院 | 太陽能電池 |
NZ761099A (en) * | 2019-01-24 | 2021-12-24 | Illinois Tool Works | Coupler for threaded reinforcing bar |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101952971A (zh) * | 2007-11-14 | 2011-01-19 | 太阳能研究所股份有限公司 | 用于制造具有表面钝化介电双层的太阳能电池的方法以及对应的太阳能电池 |
CN102593240A (zh) * | 2011-01-14 | 2012-07-18 | Lg电子株式会社 | 太阳能电池及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007281044A (ja) * | 2006-04-04 | 2007-10-25 | Canon Inc | 太陽電池 |
JP4767110B2 (ja) * | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
TWI320974B (en) * | 2006-09-27 | 2010-02-21 | Sino American Silicon Prod Inc | Solar cell and method of fabircating the same |
DE102009025977A1 (de) * | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
EP3770974A1 (en) | 2009-09-18 | 2021-01-27 | Shin-Etsu Chemical Co., Ltd. | Solar cell, method for manufacturing solar cell, and solar cell module |
JP5307688B2 (ja) | 2009-10-27 | 2013-10-02 | 株式会社カネカ | 結晶シリコン系太陽電池 |
KR101166361B1 (ko) * | 2010-09-03 | 2012-07-23 | 엘지전자 주식회사 | 태양전지 |
US20120255605A1 (en) * | 2011-04-06 | 2012-10-11 | E. I. Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
EP2533305A3 (en) * | 2011-06-06 | 2014-05-21 | Imec | Method for blister-free passivation of a silicon surface |
-
2012
- 2012-09-27 KR KR1020120108061A patent/KR101889775B1/ko active IP Right Grant
-
2013
- 2013-09-19 EP EP13004584.2A patent/EP2713403B1/en active Active
- 2013-09-26 US US14/038,159 patent/US9269839B2/en active Active
- 2013-09-26 JP JP2013199644A patent/JP2014072530A/ja active Pending
- 2013-09-27 CN CN201310450083.XA patent/CN103700713B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101952971A (zh) * | 2007-11-14 | 2011-01-19 | 太阳能研究所股份有限公司 | 用于制造具有表面钝化介电双层的太阳能电池的方法以及对应的太阳能电池 |
CN102593240A (zh) * | 2011-01-14 | 2012-07-18 | Lg电子株式会社 | 太阳能电池及其制造方法 |
Non-Patent Citations (1)
Title |
---|
ARMIN RICHTER等: "Excellent silicon surface passivation with 5A thin ALD Al2O3 layers:Influence of different thermal post-deposition treatments", 《PHYSICA STATUS SOLIDI(RRL)》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108336105A (zh) * | 2018-04-04 | 2018-07-27 | 武汉新芯集成电路制造有限公司 | 一种图像传感器及其器件邻近结构 |
CN108336105B (zh) * | 2018-04-04 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | 一种图像传感器及其器件邻近结构 |
CN110943146A (zh) * | 2019-12-16 | 2020-03-31 | 通威太阳能(安徽)有限公司 | 一种perc太阳能电池的镀膜方法、制作方法及perc太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
KR101889775B1 (ko) | 2018-08-20 |
CN103700713B (zh) | 2016-10-12 |
JP2014072530A (ja) | 2014-04-21 |
EP2713403A2 (en) | 2014-04-02 |
US9269839B2 (en) | 2016-02-23 |
EP2713403B1 (en) | 2016-11-02 |
US20140083498A1 (en) | 2014-03-27 |
EP2713403A3 (en) | 2014-10-29 |
KR20140042063A (ko) | 2014-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103700713B (zh) | 太阳能电池及其制造方法 | |
JP2014204128A (ja) | 太陽電池 | |
CN101221993A (zh) | 纳米壁太阳能电池和光电子器件 | |
KR20130052627A (ko) | 선택적 전면 필드를 구비한 후면 접합 태양전지 | |
US9608135B2 (en) | Solar cell and method for manufacturing the same | |
US20130160840A1 (en) | Solar cell | |
TWI424582B (zh) | 太陽能電池的製造方法 | |
KR102547804B1 (ko) | 양면 수광형 실리콘 태양전지 및 그 제조 방법 | |
KR20140105064A (ko) | 태양 전지 | |
CN103928567A (zh) | 太阳能电池及其制造方法 | |
US20130087191A1 (en) | Point-contact solar cell structure | |
US10141467B2 (en) | Solar cell and method for manufacturing the same | |
KR20150049211A (ko) | 태양 전지 및 이의 제조 방법 | |
KR101038967B1 (ko) | 태양 전지 및 그 제조 방법 | |
US9214584B2 (en) | Solar cell, method for manufacturing dopant layer, and method for manufacturing solar cell | |
KR101045859B1 (ko) | 태양 전지 및 그 제조 방법 | |
KR20090105482A (ko) | 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법 | |
EP2854182A1 (en) | Solar cell | |
JP5645734B2 (ja) | 太陽電池素子 | |
KR20180127597A (ko) | 후면접합 실리콘 태양전지 및 이를 제조하는 방법 | |
KR20130061346A (ko) | 태양전지 및 그 제조방법 | |
KR101772432B1 (ko) | 다중밴드 Si-Ge 박막 단결정을 이용한 태양전지 및 그의 효율 개선방법 | |
KR101889774B1 (ko) | 태양 전지 | |
CN114744063B (zh) | 太阳能电池及生产方法、光伏组件 | |
KR20170117981A (ko) | 태양 전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20140402 Assignee: Hanhua thinksin Co.,Ltd. Assignor: LG ELECTRONICS Inc. Contract record no.: X2022990000645 Denomination of invention: Solar cell and method of making the same Granted publication date: 20161012 License type: Common License Record date: 20220914 |
|
TR01 | Transfer of patent right |
Effective date of registration: 20221021 Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province Patentee after: Shangrao Jingke Green Energy Technology Development Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG ELECTRONICS Inc. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee after: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Jingke Green Energy Technology Development Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240307 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINASOLAR Co.,Ltd. Country or region after: China Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |