CN103700713B - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
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- CN103700713B CN103700713B CN201310450083.XA CN201310450083A CN103700713B CN 103700713 B CN103700713 B CN 103700713B CN 201310450083 A CN201310450083 A CN 201310450083A CN 103700713 B CN103700713 B CN 103700713B
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- solaode
- passivating film
- semiconductor substrate
- film
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 230000003667 anti-reflective effect Effects 0.000 claims description 40
- 239000000126 substance Substances 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 82
- 239000000463 material Substances 0.000 description 21
- 238000002161 passivation Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 11
- 238000005187 foaming Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- -1 Wherein Chemical compound 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical group 0.000 description 5
- 239000006071 cream Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120108061A KR101889775B1 (ko) | 2012-09-27 | 2012-09-27 | 태양 전지 및 이의 제조 방법 |
KR10-2012-0108061 | 2012-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103700713A CN103700713A (zh) | 2014-04-02 |
CN103700713B true CN103700713B (zh) | 2016-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310450083.XA Active CN103700713B (zh) | 2012-09-27 | 2013-09-27 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9269839B2 (zh) |
EP (1) | EP2713403B1 (zh) |
JP (1) | JP2014072530A (zh) |
KR (1) | KR101889775B1 (zh) |
CN (1) | CN103700713B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8597970B2 (en) | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
KR102244604B1 (ko) * | 2014-08-14 | 2021-04-26 | 엘지전자 주식회사 | 태양 전지 |
US9837576B2 (en) | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9520507B2 (en) | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
US9525083B2 (en) | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
US11355657B2 (en) | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
WO2017002747A1 (ja) | 2015-06-30 | 2017-01-05 | シャープ株式会社 | 光電変換素子 |
JP6198996B1 (ja) * | 2016-01-13 | 2017-09-20 | 三菱電機株式会社 | 太陽電池および太陽電池を生産する方法 |
US9502601B1 (en) | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
US20180138328A1 (en) * | 2016-11-11 | 2018-05-17 | Sunpower Corporation | Uv-curing of light-receiving surfaces of solar cells |
CN108336105B (zh) * | 2018-04-04 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | 一种图像传感器及其器件邻近结构 |
TWI688109B (zh) * | 2018-10-26 | 2020-03-11 | 財團法人工業技術研究院 | 太陽能電池 |
AU2020200495B2 (en) * | 2019-01-24 | 2023-10-19 | Illinois Tool Works Inc. | Coupler for threaded reinforcing bar |
CN110943146B (zh) * | 2019-12-16 | 2021-12-17 | 通威太阳能(安徽)有限公司 | 一种perc太阳能电池的镀膜方法、制作方法及perc太阳能电池 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101952971A (zh) * | 2007-11-14 | 2011-01-19 | 太阳能研究所股份有限公司 | 用于制造具有表面钝化介电双层的太阳能电池的方法以及对应的太阳能电池 |
CN102593240A (zh) * | 2011-01-14 | 2012-07-18 | Lg电子株式会社 | 太阳能电池及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007281044A (ja) * | 2006-04-04 | 2007-10-25 | Canon Inc | 太陽電池 |
JP4767110B2 (ja) * | 2006-06-30 | 2011-09-07 | シャープ株式会社 | 太陽電池、および太陽電池の製造方法 |
TWI320974B (en) * | 2006-09-27 | 2010-02-21 | Sino American Silicon Prod Inc | Solar cell and method of fabircating the same |
DE102009025977A1 (de) * | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solarzelle und Herstellungsverfahren einer Solarzelle |
KR102017558B1 (ko) | 2009-09-18 | 2019-09-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 그 제조방법 및 태양전지 모듈 |
JP5307688B2 (ja) | 2009-10-27 | 2013-10-02 | 株式会社カネカ | 結晶シリコン系太陽電池 |
KR101166361B1 (ko) * | 2010-09-03 | 2012-07-23 | 엘지전자 주식회사 | 태양전지 |
US20120255605A1 (en) * | 2011-04-06 | 2012-10-11 | E. I. Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
EP2533305A3 (en) | 2011-06-06 | 2014-05-21 | Imec | Method for blister-free passivation of a silicon surface |
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2012
- 2012-09-27 KR KR1020120108061A patent/KR101889775B1/ko active IP Right Grant
-
2013
- 2013-09-19 EP EP13004584.2A patent/EP2713403B1/en active Active
- 2013-09-26 US US14/038,159 patent/US9269839B2/en active Active
- 2013-09-26 JP JP2013199644A patent/JP2014072530A/ja active Pending
- 2013-09-27 CN CN201310450083.XA patent/CN103700713B/zh active Active
Patent Citations (2)
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CN101952971A (zh) * | 2007-11-14 | 2011-01-19 | 太阳能研究所股份有限公司 | 用于制造具有表面钝化介电双层的太阳能电池的方法以及对应的太阳能电池 |
CN102593240A (zh) * | 2011-01-14 | 2012-07-18 | Lg电子株式会社 | 太阳能电池及其制造方法 |
Non-Patent Citations (1)
Title |
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Excellent silicon surface passivation with 5A thin ALD Al2O3 layers:Influence of different thermal post-deposition treatments;Armin Richter等;《Physica status solidi(RRL)》;20110511;第5卷(第5-6期);第202-204页 * |
Also Published As
Publication number | Publication date |
---|---|
EP2713403B1 (en) | 2016-11-02 |
CN103700713A (zh) | 2014-04-02 |
EP2713403A3 (en) | 2014-10-29 |
US9269839B2 (en) | 2016-02-23 |
JP2014072530A (ja) | 2014-04-21 |
KR101889775B1 (ko) | 2018-08-20 |
US20140083498A1 (en) | 2014-03-27 |
KR20140042063A (ko) | 2014-04-07 |
EP2713403A2 (en) | 2014-04-02 |
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