JP2013545315A5 - - Google Patents

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Publication number
JP2013545315A5
JP2013545315A5 JP2013541985A JP2013541985A JP2013545315A5 JP 2013545315 A5 JP2013545315 A5 JP 2013545315A5 JP 2013541985 A JP2013541985 A JP 2013541985A JP 2013541985 A JP2013541985 A JP 2013541985A JP 2013545315 A5 JP2013545315 A5 JP 2013545315A5
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JP
Japan
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semiconductor
layer
material stack
undoped
work function
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JP2013541985A
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English (en)
Japanese (ja)
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JP5669954B2 (ja
JP2013545315A (ja
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Priority claimed from US12/960,589 external-priority patent/US8466473B2/en
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Publication of JP2013545315A5 publication Critical patent/JP2013545315A5/ja
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Publication of JP5669954B2 publication Critical patent/JP5669954B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013541985A 2010-12-06 2011-09-15 高Ｋ／金属ゲートＭＯＳＦＥＴを有するＶｔ調整及び短チャネル制御のための構造体及び方法。 Expired - Fee Related JP5669954B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/960,589 2010-12-06
US12/960,589 US8466473B2 (en) 2010-12-06 2010-12-06 Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
PCT/US2011/051675 WO2012078225A1 (en) 2010-12-06 2011-09-15 STRUCTURE AND METHOD FOR Vt TUNING AND SHORT CHANNEL CONTROL WITH HIGH K/METAL GATE MOSFETs

Publications (3)

Publication Number Publication Date
JP2013545315A JP2013545315A (ja) 2013-12-19
JP2013545315A5 true JP2013545315A5 (enExample) 2014-08-14
JP5669954B2 JP5669954B2 (ja) 2015-02-18

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JP2013541985A Expired - Fee Related JP5669954B2 (ja) 2010-12-06 2011-09-15 高Ｋ／金属ゲートＭＯＳＦＥＴを有するＶｔ調整及び短チャネル制御のための構造体及び方法。

Country Status (7)

Country Link
US (1) US8466473B2 (enExample)
EP (1) EP2641271B1 (enExample)
JP (1) JP5669954B2 (enExample)
CN (1) CN103262246B (enExample)
BR (1) BR112013009219A2 (enExample)
TW (1) TWI493710B (enExample)
WO (1) WO2012078225A1 (enExample)

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