JP2009158853A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009158853A JP2009158853A JP2007338047A JP2007338047A JP2009158853A JP 2009158853 A JP2009158853 A JP 2009158853A JP 2007338047 A JP2007338047 A JP 2007338047A JP 2007338047 A JP2007338047 A JP 2007338047A JP 2009158853 A JP2009158853 A JP 2009158853A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000012535 impurity Substances 0.000 claims description 112
- 230000001629 suppression Effects 0.000 claims description 41
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 62
- 229910052710 silicon Inorganic materials 0.000 abstract description 62
- 239000010703 silicon Substances 0.000 abstract description 62
- 239000002019 doping agent Substances 0.000 abstract 10
- 108091006146 Channels Proteins 0.000 description 73
- 229910021332 silicide Inorganic materials 0.000 description 21
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 13
- 238000004151 rapid thermal annealing Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 半導体基板1と、前記半導体基板上に形成された第一の不純物拡散抑制層3と、前記第一の不純物拡散抑制層3上に形成された不純物チャネル層5と、前記不純物チャネル層5上に形成された第二の不純物拡散抑制層4とを備えることにより不純物チャネル層5から下方向への不純物拡散を防止した急峻な不純物濃度勾配を有するチャネル構造を形成することができ、具体的にはシリコン基板1の不純物濃度を1×1017cm−3以下にすることによってより効果的に接合容量や接合リークを抑えたトランジスタを形成することができる。
【選択図】 図1
Description
図1は、本発明の第1の実施形態に係る半導体装置の、チャネル長方向の断面図である。
図4は、本発明の第2の実施形態に係る半導体装置の、チャネル長方向の断面図である。
次に、本発明の第3の実施形態に係る半導体装置の製造方法について説明する。本実施形態は、不純物チャネル層を形成する際、第1の実施形態又は第2の実施形態の不純物をドープしたエピタキシャル成長に換えて、ノンドープのシリコンエピタキシャル層を成長させ、後の浅い拡散層及び深い拡散層形成時のイオン注入と同時に不純物チャネル層のシリコンエピタキシャル層に不純物を導入することを特徴とする。それ以外の製造工程、膜の材料及び構造については、第1又は第2の実施形態と同様であるので、ここでは重複する部分の説明は省略する。
2、14 素子分離
3、15 第一の不純物拡散抑制層
4、16 第二の不純物拡散抑制層
5、17 不純物チャネル層
6、18 シリコンエピタキシャル層
7、20 ゲート絶縁膜
8、21 ゲート電極
9、22 浅い拡散層
10、23 ゲート側壁膜
11、24 深い拡散層
12、25 シリサイド層
19 SiGeチャネル層
Claims (5)
- 半導体基板と、
前記半導体基板上に形成された第一の不純物拡散抑制層と、
前記第一の不純物拡散抑制層上に形成された不純物チャネル層と、
前記不純物チャネル層上に形成された第二の不純物拡散抑制層と、
前記第二の不純物拡散抑制層上に形成されたチャネル層と、
前記チャネル層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
を備えることを特徴とする半導体装置。 - 前記第一及び第二の不純物拡散抑制層は、SiCであることを特徴とする請求項1記載の半導体装置。
- 前記第一及び第二の不純物拡散抑制層の炭素元素濃度が、1×1017cm−3以上であることを特徴とする請求項2記載の半導体装置。
- 前記第一及び第二の不純物拡散抑制層は、SiGeであることを特徴とする請求項1記載の半導体装置。
- 前記第一及び第二の不純物拡散抑制層のゲルマニウム元素濃度が、1×1017cm−3以上であることを特徴とする請求項4記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007338047A JP2009158853A (ja) | 2007-12-27 | 2007-12-27 | 半導体装置 |
US12/340,027 US7985985B2 (en) | 2007-12-27 | 2008-12-19 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007338047A JP2009158853A (ja) | 2007-12-27 | 2007-12-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009158853A true JP2009158853A (ja) | 2009-07-16 |
JP2009158853A5 JP2009158853A5 (ja) | 2010-04-15 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007338047A Pending JP2009158853A (ja) | 2007-12-27 | 2007-12-27 | 半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US7985985B2 (ja) |
JP (1) | JP2009158853A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8154077B2 (en) | 2010-02-02 | 2012-04-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2013545315A (ja) * | 2010-12-06 | 2013-12-19 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 高K/金属ゲートMOSFETを有するVt調整及び短チャネル制御のための構造体及び方法。 |
JP2016516298A (ja) * | 2013-03-14 | 2016-06-02 | インテル・コーポレーション | ナノワイヤトランジスタのリーク低減構造 |
KR20170019541A (ko) * | 2015-08-11 | 2017-02-22 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5682185B2 (ja) | 2010-09-07 | 2015-03-11 | ソニー株式会社 | 半導体パッケージおよび半導体パッケージの製造方法ならびに光学モジュール |
US9660049B2 (en) * | 2011-11-03 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor transistor device with dopant profile |
US9209181B2 (en) * | 2013-06-14 | 2015-12-08 | Globalfoundries Inc. | Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures |
KR102104062B1 (ko) * | 2013-10-31 | 2020-04-23 | 삼성전자 주식회사 | 기판 구조체, 이를 포함한 cmos 소자 및 cmos 소자 제조 방법 |
US9246002B2 (en) | 2014-03-13 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for semiconductor device |
US10103064B2 (en) | 2014-05-28 | 2018-10-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor structure including epitaxial channel layers and raised source/drain regions |
US20190131454A1 (en) * | 2017-11-01 | 2019-05-02 | Qualcomm Incorporated | Semiconductor device with strained silicon layers on porous silicon |
JP7150524B2 (ja) | 2018-08-24 | 2022-10-11 | キオクシア株式会社 | 半導体装置 |
US11616058B2 (en) * | 2020-12-10 | 2023-03-28 | Texas Instruments Incorporated | Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor device |
CN116344590B (zh) * | 2023-05-23 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制作方法 |
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2008
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JPH06326306A (ja) * | 1993-04-29 | 1994-11-25 | Samsung Electron Co Ltd | Mosトランジスタおよびその製造方法 |
JPH11500873A (ja) * | 1995-12-15 | 1999-01-19 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | SiGe層を具えた半導体電界効果デバイス |
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Cited By (6)
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US8154077B2 (en) | 2010-02-02 | 2012-04-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2013545315A (ja) * | 2010-12-06 | 2013-12-19 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 高K/金属ゲートMOSFETを有するVt調整及び短チャネル制御のための構造体及び方法。 |
JP2016516298A (ja) * | 2013-03-14 | 2016-06-02 | インテル・コーポレーション | ナノワイヤトランジスタのリーク低減構造 |
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KR102437779B1 (ko) * | 2015-08-11 | 2022-08-30 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 |
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US20090166685A1 (en) | 2009-07-02 |
US7985985B2 (en) | 2011-07-26 |
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