TWI493710B - 具高介電常數／金屬閘極金氧半場效電晶體的Ｖｔ調整與短通道控制的結構與方法 - Google Patents

具高介電常數／金屬閘極金氧半場效電晶體的Ｖｔ調整與短通道控制的結構與方法 Download PDF

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Publication number
TWI493710B
TWI493710B TW100140609A TW100140609A TWI493710B TW I493710 B TWI493710 B TW I493710B TW 100140609 A TW100140609 A TW 100140609A TW 100140609 A TW100140609 A TW 100140609A TW I493710 B TWI493710 B TW I493710B
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semiconductor
layer
undoped
work function
material stack
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TW100140609A
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Chinese (zh)
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TW201236153A (en
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Jin Cai
Xiangdong Chen
Xinlin Wang
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Ibm
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW100140609A 2010-12-06 2011-11-07 具高介電常數／金屬閘極金氧半場效電晶體的Ｖｔ調整與短通道控制的結構與方法 TWI493710B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/960,589 US8466473B2 (en) 2010-12-06 2010-12-06 Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs

Publications (2)

Publication Number Publication Date
TW201236153A TW201236153A (en) 2012-09-01
TWI493710B true TWI493710B (zh) 2015-07-21

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Country Status (7)

Country Link
US (1) US8466473B2 (enExample)
EP (1) EP2641271B1 (enExample)
JP (1) JP5669954B2 (enExample)
CN (1) CN103262246B (enExample)
BR (1) BR112013009219A2 (enExample)
TW (1) TWI493710B (enExample)
WO (1) WO2012078225A1 (enExample)

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CN103262246A (zh) 2013-08-21
JP5669954B2 (ja) 2015-02-18
EP2641271A1 (en) 2013-09-25
BR112013009219A2 (pt) 2019-09-24
CN103262246B (zh) 2016-04-27
TW201236153A (en) 2012-09-01
US8466473B2 (en) 2013-06-18
EP2641271B1 (en) 2017-04-12
EP2641271A4 (en) 2014-03-19
WO2012078225A1 (en) 2012-06-14
JP2013545315A (ja) 2013-12-19
US20120138953A1 (en) 2012-06-07

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