CN103262246B - 用于具有高介电常数/金属栅极MOSFET的Vt调整和短沟道控制的结构和方法 - Google Patents

用于具有高介电常数/金属栅极MOSFET的Vt调整和短沟道控制的结构和方法 Download PDF

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Publication number
CN103262246B
CN103262246B CN201180057992.6A CN201180057992A CN103262246B CN 103262246 B CN103262246 B CN 103262246B CN 201180057992 A CN201180057992 A CN 201180057992A CN 103262246 B CN103262246 B CN 103262246B
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semiconductor
material stack
channel layer
another
layer
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CN103262246A (zh
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王新琳
陈向东
蔡劲
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN201180057992.6A 2010-12-06 2011-09-15 用于具有高介电常数/金属栅极MOSFET的Vt调整和短沟道控制的结构和方法 Active CN103262246B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/960,589 2010-12-06
US12/960,589 US8466473B2 (en) 2010-12-06 2010-12-06 Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
PCT/US2011/051675 WO2012078225A1 (en) 2010-12-06 2011-09-15 STRUCTURE AND METHOD FOR Vt TUNING AND SHORT CHANNEL CONTROL WITH HIGH K/METAL GATE MOSFETs

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CN103262246A CN103262246A (zh) 2013-08-21
CN103262246B true CN103262246B (zh) 2016-04-27

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US (1) US8466473B2 (enExample)
EP (1) EP2641271B1 (enExample)
JP (1) JP5669954B2 (enExample)
CN (1) CN103262246B (enExample)
BR (1) BR112013009219A2 (enExample)
TW (1) TWI493710B (enExample)
WO (1) WO2012078225A1 (enExample)

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CN103262246A (zh) 2013-08-21
JP5669954B2 (ja) 2015-02-18
EP2641271A1 (en) 2013-09-25
BR112013009219A2 (pt) 2019-09-24
TW201236153A (en) 2012-09-01
US8466473B2 (en) 2013-06-18
EP2641271B1 (en) 2017-04-12
EP2641271A4 (en) 2014-03-19
WO2012078225A1 (en) 2012-06-14
JP2013545315A (ja) 2013-12-19
TWI493710B (zh) 2015-07-21
US20120138953A1 (en) 2012-06-07

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