JP2016526783A5 - - Google Patents

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Publication number
JP2016526783A5
JP2016526783A5 JP2016519519A JP2016519519A JP2016526783A5 JP 2016526783 A5 JP2016526783 A5 JP 2016526783A5 JP 2016519519 A JP2016519519 A JP 2016519519A JP 2016519519 A JP2016519519 A JP 2016519519A JP 2016526783 A5 JP2016526783 A5 JP 2016526783A5
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JP
Japan
Prior art keywords
single crystal
crystal silicon
silicon wafer
type single
concentration
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Application number
JP2016519519A
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English (en)
Japanese (ja)
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JP2016526783A (ja
JP6289621B2 (ja
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Priority claimed from US13/914,925 external-priority patent/US9634098B2/en
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Publication of JP2016526783A5 publication Critical patent/JP2016526783A5/ja
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Publication of JP6289621B2 publication Critical patent/JP6289621B2/ja
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JP2016519519A 2013-06-11 2014-05-23 チョクラルスキ法で成長したインゴットからスライスされた高ドープシリコンウエハ中の酸素析出 Active JP6289621B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/914,925 US9634098B2 (en) 2013-06-11 2013-06-11 Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
US13/914,925 2013-06-11
PCT/US2014/039363 WO2014200686A1 (en) 2013-06-11 2014-05-23 Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the czochralski method

Publications (3)

Publication Number Publication Date
JP2016526783A JP2016526783A (ja) 2016-09-05
JP2016526783A5 true JP2016526783A5 (enExample) 2017-07-20
JP6289621B2 JP6289621B2 (ja) 2018-03-07

Family

ID=50983191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016519519A Active JP6289621B2 (ja) 2013-06-11 2014-05-23 チョクラルスキ法で成長したインゴットからスライスされた高ドープシリコンウエハ中の酸素析出

Country Status (5)

Country Link
US (1) US9634098B2 (enExample)
JP (1) JP6289621B2 (enExample)
KR (3) KR102071304B1 (enExample)
DE (2) DE112014007334B3 (enExample)
WO (1) WO2014200686A1 (enExample)

Families Citing this family (12)

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KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
KR101759876B1 (ko) * 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
JP6610056B2 (ja) * 2015-07-28 2019-11-27 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハの製造方法
KR101674819B1 (ko) * 2015-08-12 2016-11-09 주식회사 엘지실트론 단결정 성장 방법
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
WO2017058928A1 (en) 2015-10-01 2017-04-06 Sunedison Semiconductor Limited Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
JP6579046B2 (ja) * 2016-06-17 2019-09-25 株式会社Sumco シリコン単結晶の製造方法
EP3653761B1 (en) * 2016-12-28 2024-02-28 Sunedison Semiconductor Limited Silicon wafers with intrinsic gettering and gate oxide integrity yield
JP7306536B1 (ja) 2022-06-14 2023-07-11 信越半導体株式会社 エピタキシャルウェーハの製造方法
CN118507557A (zh) * 2023-09-27 2024-08-16 隆基绿能科技股份有限公司 一种混合掺杂的硅片

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