JP2016503964A5 - - Google Patents
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- JP2016503964A5 JP2016503964A5 JP2015550811A JP2015550811A JP2016503964A5 JP 2016503964 A5 JP2016503964 A5 JP 2016503964A5 JP 2015550811 A JP2015550811 A JP 2015550811A JP 2015550811 A JP2015550811 A JP 2015550811A JP 2016503964 A5 JP2016503964 A5 JP 2016503964A5
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- single crystal
- indium
- crystal silicon
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 50
- 229910052738 indium Inorganic materials 0.000 claims description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 230000003595 spectral effect Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITTO2012A001175 | 2012-12-31 | ||
| ITTO20121175 | 2012-12-31 | ||
| EP2013054878 | 2013-03-11 | ||
| EPPCT/EP2013/054875 | 2013-03-11 | ||
| EPPCT/EP2013/054878 | 2013-03-11 | ||
| EP2013054875 | 2013-03-11 | ||
| US201361838660P | 2013-06-24 | 2013-06-24 | |
| US61/838,660 | 2013-06-24 | ||
| PCT/US2013/078056 WO2014106086A1 (en) | 2012-12-31 | 2013-12-27 | Indium-doped silicon wafer and solar cell using the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018229328A Division JP2019041128A (ja) | 2012-12-31 | 2018-12-06 | インジウムドープシリコンウェハおよびそれを用いた太陽電池セル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016503964A JP2016503964A (ja) | 2016-02-08 |
| JP2016503964A5 true JP2016503964A5 (enExample) | 2017-02-09 |
Family
ID=51022087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015550811A Pending JP2016503964A (ja) | 2012-12-31 | 2013-12-27 | インジウムドープシリコンウェハおよびそれを用いた太陽電池セル |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10060045B2 (enExample) |
| JP (1) | JP2016503964A (enExample) |
| KR (1) | KR20150103703A (enExample) |
| CN (1) | CN105008595B (enExample) |
| TW (2) | TWI596240B (enExample) |
| WO (2) | WO2014106086A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213185B (zh) * | 2014-08-20 | 2017-01-25 | 浙江晶盛机电股份有限公司 | 一种用于单晶硅生长炉的氩气分流装置 |
| CN108138354B (zh) * | 2015-05-01 | 2021-05-28 | 各星有限公司 | 生产被挥发性掺杂剂掺杂的单晶锭的方法 |
| US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
| US10145023B2 (en) * | 2015-07-17 | 2018-12-04 | Corner Star Limited | Methods for reducing deposits in ingot puller exhaust systems |
| US9640450B1 (en) * | 2015-10-23 | 2017-05-02 | Motech Industries Inc. | Method for reducing light-induced-degradation in manufacturing solar cell |
| US10487418B2 (en) | 2016-01-06 | 2019-11-26 | Globalwafers Co., Ltd. | Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process |
| CN105821474B (zh) * | 2016-04-13 | 2018-01-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅的制备方法及晶体硅 |
| US20180087179A1 (en) * | 2016-09-28 | 2018-03-29 | Corner Star Limited | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots |
| KR102626492B1 (ko) * | 2016-11-14 | 2024-01-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지의 제조 방법 및 고광전변환효율 태양전지 |
| US10920337B2 (en) * | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
| JP6699797B2 (ja) * | 2017-02-28 | 2020-05-27 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶インゴット |
| JP6862916B2 (ja) * | 2017-02-28 | 2021-04-21 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
| DE102017220352B4 (de) | 2017-11-15 | 2023-02-02 | Siltronic Ag | Verfahren zum Überprüfen einer Vorrichtung zum Ziehen eines Einkristalls und Vorrichtung zum Ziehen eines Einkristalls |
| DE102018210317A1 (de) * | 2018-06-25 | 2020-01-02 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
| US11047066B2 (en) * | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
| EP3864197B1 (en) * | 2018-10-12 | 2022-08-03 | GlobalWafers Co., Ltd. | Dopant concentration control in silicon melt to enhance the ingot quality |
| WO2020210129A1 (en) | 2019-04-11 | 2020-10-15 | Globalwafers Co., Ltd. | Process for preparing ingot having reduced distortion at late body length |
| JP2022529451A (ja) | 2019-04-18 | 2022-06-22 | グローバルウェーハズ カンパニー リミテッド | 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法 |
| CN110255863B (zh) * | 2019-07-22 | 2023-04-25 | 山东柔光新材料有限公司 | 一种柔性玻璃板根控制系统及其控制方法 |
| US11111597B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
| US11111596B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
| JP7285197B2 (ja) * | 2019-11-06 | 2023-06-01 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上方法及び単結晶引上装置 |
| CN113355739B (zh) * | 2021-05-12 | 2023-01-24 | 晶澳太阳能有限公司 | 单晶硅及其制备方法 |
| CN115491751A (zh) * | 2021-06-17 | 2022-12-20 | 内蒙古中环协鑫光伏材料有限公司 | 一种根据保护气体流量控制掺镓单晶电阻率的拉制工艺 |
| US11866845B2 (en) | 2022-01-06 | 2024-01-09 | Globalwafers Co., Ltd. | Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control |
| US12037698B2 (en) | 2022-01-06 | 2024-07-16 | Globalwafers Co., Ltd | Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube |
| CN114808112B (zh) * | 2022-03-31 | 2024-09-20 | 上海新昇半导体科技有限公司 | 一种单晶生长方法及晶圆 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547258A (en) | 1982-12-22 | 1985-10-15 | Texas Instruments Incorporated | Deposition of silicon at temperatures above its melting point |
| JPS59156993A (ja) | 1983-02-23 | 1984-09-06 | Komatsu Denshi Kinzoku Kk | Ｃｚ単結晶のド−プ方法およびその装置 |
| DE4106589C2 (de) | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
| US5406905A (en) | 1993-05-28 | 1995-04-18 | Simco/Ramic Corporation | Cast dopant for crystal growing |
| JPH08119787A (ja) | 1994-10-14 | 1996-05-14 | Komatsu Electron Metals Co Ltd | 連続チャージ法におけるドーパント供給方法およびドーパント組成物 |
| US6063188A (en) | 1998-05-20 | 2000-05-16 | Seh-America. Inc. | Crucible with differentially expanding release mechanism |
| DE10006589A1 (de) * | 1999-05-26 | 2000-12-07 | Samsung Electronics Co Ltd | Czochralski-Zugvorrichtungen und Zugverfahren zum Herstellen von monokristallinen Siliziumblöcken |
| US6815605B1 (en) * | 1999-05-28 | 2004-11-09 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal and wafer doped with gallium and method for producing them |
| DE19961126A1 (de) | 1999-12-17 | 2001-06-21 | Siemens Solar Gmbh | Siliziumkristall, insbesondere für Solarzellen, und Verfahren zur Herstellung |
| DE10007179B4 (de) | 2000-02-17 | 2004-08-19 | Siltronic Ag | Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff |
| JP2001267610A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
| JP2002057351A (ja) | 2000-08-15 | 2002-02-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法および太陽電池セル |
| KR100486877B1 (ko) * | 2002-10-15 | 2005-05-03 | 주식회사 실트론 | 저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법 |
| DE10250822B4 (de) | 2002-10-31 | 2006-09-28 | Siltronic Ag | Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium |
| JP2005272265A (ja) | 2004-03-26 | 2005-10-06 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
| JP4356517B2 (ja) | 2004-05-28 | 2009-11-04 | 株式会社Ｓｕｍｃｏ | シリコン単結晶引上装置およびシリコン単結晶の製造方法 |
| EP1777753B1 (en) | 2005-10-21 | 2011-07-13 | Sumco Solar Corporation | SiGe Solar-cell single-crystal silicon substrate, SiGe solar cell element, and method for producing the same |
| US20090039478A1 (en) | 2007-03-10 | 2009-02-12 | Bucher Charles E | Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth |
| JP5118386B2 (ja) * | 2007-05-10 | 2013-01-16 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 単結晶の製造方法 |
| JP5074826B2 (ja) | 2007-05-31 | 2012-11-14 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | ドーパントの注入方法、及びドーピング装置 |
| FR2929960B1 (fr) * | 2008-04-11 | 2011-05-13 | Apollon Solar | Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes |
| DE102009034317A1 (de) | 2009-07-23 | 2011-02-03 | Q-Cells Se | Verfahren zur Herstellung durchbruchsicherer p-Typ Solarzellen aus umg-Silizium |
| CN101805925B (zh) | 2010-02-20 | 2012-08-15 | 西安隆基硅材料股份有限公司 | 太阳能电池用掺镓铟单晶硅材料及其制备方法 |
| CN103249875B (zh) * | 2010-09-03 | 2016-10-12 | Gtatip控股有限责任公司 | 镓、铟、或铝掺杂单晶硅 |
| JP2012066965A (ja) | 2010-09-24 | 2012-04-05 | Covalent Materials Corp | シリコン単結晶引上装置 |
| FI126401B (fi) | 2011-09-30 | 2016-11-15 | Aalto-Korkeakoulusäätiö | Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin |
-
2013
- 2013-12-27 CN CN201380074084.7A patent/CN105008595B/zh active Active
- 2013-12-27 KR KR1020157020520A patent/KR20150103703A/ko not_active Ceased
- 2013-12-27 US US14/758,471 patent/US10060045B2/en active Active
- 2013-12-27 JP JP2015550811A patent/JP2016503964A/ja active Pending
- 2013-12-27 US US14/758,467 patent/US20150333193A1/en not_active Abandoned
- 2013-12-27 WO PCT/US2013/078056 patent/WO2014106086A1/en not_active Ceased
- 2013-12-27 WO PCT/US2013/078046 patent/WO2014106080A1/en not_active Ceased
- 2013-12-31 TW TW102149292A patent/TWI596240B/zh active
- 2013-12-31 TW TW102149294A patent/TW201438262A/zh unknown
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