TWI596240B - 藉柴可斯基（ｃｚｏｃｈｒａｌｓｋｉ）方法製造銦摻雜矽 - Google Patents
藉柴可斯基（ｃｚｏｃｈｒａｌｓｋｉ）方法製造銦摻雜矽 Download PDFInfo
- Publication number
- TWI596240B TWI596240B TW102149292A TW102149292A TWI596240B TW I596240 B TWI596240 B TW I596240B TW 102149292 A TW102149292 A TW 102149292A TW 102149292 A TW102149292 A TW 102149292A TW I596240 B TWI596240 B TW I596240B
- Authority
- TW
- Taiwan
- Prior art keywords
- indium
- dopant
- ingot
- single crystal
- melt
- Prior art date
Links
- 229910052727 yttrium Inorganic materials 0.000 title description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims description 221
- 229910052738 indium Inorganic materials 0.000 claims description 211
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 210
- 239000002019 doping agent Substances 0.000 claims description 165
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 144
- 238000000034 method Methods 0.000 claims description 109
- 239000007788 liquid Substances 0.000 claims description 100
- 229910052732 germanium Inorganic materials 0.000 claims description 72
- 239000000155 melt Substances 0.000 claims description 63
- 239000011261 inert gas Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 40
- 238000001704 evaporation Methods 0.000 claims description 29
- 230000008020 evaporation Effects 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052797 bismuth Inorganic materials 0.000 claims description 20
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 20
- 229910052707 ruthenium Inorganic materials 0.000 claims description 20
- 230000004323 axial length Effects 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 186
- 210000004027 cell Anatomy 0.000 description 184
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 51
- 229910052796 boron Inorganic materials 0.000 description 51
- 230000008595 infiltration Effects 0.000 description 22
- 238000001764 infiltration Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- 239000001307 helium Substances 0.000 description 19
- 229910052734 helium Inorganic materials 0.000 description 19
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 19
- 238000012360 testing method Methods 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 15
- 238000006731 degradation reaction Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- 230000001105 regulatory effect Effects 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000005204 segregation Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000010561 standard procedure Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- DHEIAYDROZXXGS-UHFFFAOYSA-N ethanol;iodine Chemical compound [I].CCO DHEIAYDROZXXGS-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- 241000132092 Aster Species 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITTO20121175 | 2012-12-31 | ||
| EP2013054878 | 2013-03-11 | ||
| EP2013054875 | 2013-03-11 | ||
| US201361838660P | 2013-06-24 | 2013-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201432101A TW201432101A (zh) | 2014-08-16 |
| TWI596240B true TWI596240B (zh) | 2017-08-21 |
Family
ID=51022087
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102149292A TWI596240B (zh) | 2012-12-31 | 2013-12-31 | 藉柴可斯基（ｃｚｏｃｈｒａｌｓｋｉ）方法製造銦摻雜矽 |
| TW102149294A TW201438262A (zh) | 2012-12-31 | 2013-12-31 | 銦摻雜太陽能電池及以柴可斯基（ｃｚｏｃｈｒａｌｓｋｉ）方法成長之銦摻雜矽 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102149294A TW201438262A (zh) | 2012-12-31 | 2013-12-31 | 銦摻雜太陽能電池及以柴可斯基（ｃｚｏｃｈｒａｌｓｋｉ）方法成長之銦摻雜矽 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10060045B2 (enExample) |
| JP (1) | JP2016503964A (enExample) |
| KR (1) | KR20150103703A (enExample) |
| CN (1) | CN105008595B (enExample) |
| TW (2) | TWI596240B (enExample) |
| WO (2) | WO2014106086A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI730923B (zh) * | 2019-11-06 | 2021-06-11 | 日商環球晶圓日本股份有限公司 | 單晶拉引方法以及單晶拉引裝置 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213185B (zh) * | 2014-08-20 | 2017-01-25 | 浙江晶盛机电股份有限公司 | 一种用于单晶硅生长炉的氩气分流装置 |
| CN108138354B (zh) * | 2015-05-01 | 2021-05-28 | 各星有限公司 | 生产被挥发性掺杂剂掺杂的单晶锭的方法 |
| US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
| US10145023B2 (en) * | 2015-07-17 | 2018-12-04 | Corner Star Limited | Methods for reducing deposits in ingot puller exhaust systems |
| US9640450B1 (en) * | 2015-10-23 | 2017-05-02 | Motech Industries Inc. | Method for reducing light-induced-degradation in manufacturing solar cell |
| US10487418B2 (en) | 2016-01-06 | 2019-11-26 | Globalwafers Co., Ltd. | Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process |
| CN105821474B (zh) * | 2016-04-13 | 2018-01-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅的制备方法及晶体硅 |
| US20180087179A1 (en) * | 2016-09-28 | 2018-03-29 | Corner Star Limited | Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots |
| KR102626492B1 (ko) * | 2016-11-14 | 2024-01-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지의 제조 방법 및 고광전변환효율 태양전지 |
| US10920337B2 (en) * | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
| JP6699797B2 (ja) * | 2017-02-28 | 2020-05-27 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶インゴット |
| JP6862916B2 (ja) * | 2017-02-28 | 2021-04-21 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
| DE102017220352B4 (de) | 2017-11-15 | 2023-02-02 | Siltronic Ag | Verfahren zum Überprüfen einer Vorrichtung zum Ziehen eines Einkristalls und Vorrichtung zum Ziehen eines Einkristalls |
| DE102018210317A1 (de) * | 2018-06-25 | 2020-01-02 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
| US11047066B2 (en) * | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
| EP3864197B1 (en) * | 2018-10-12 | 2022-08-03 | GlobalWafers Co., Ltd. | Dopant concentration control in silicon melt to enhance the ingot quality |
| WO2020210129A1 (en) | 2019-04-11 | 2020-10-15 | Globalwafers Co., Ltd. | Process for preparing ingot having reduced distortion at late body length |
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| TWI730923B (zh) * | 2019-11-06 | 2021-06-11 | 日商環球晶圓日本股份有限公司 | 單晶拉引方法以及單晶拉引裝置 |
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| TW201432101A (zh) | 2014-08-16 |
| TW201438262A (zh) | 2014-10-01 |
| WO2014106080A1 (en) | 2014-07-03 |
| WO2014106086A1 (en) | 2014-07-03 |
| US20160215413A1 (en) | 2016-07-28 |
| CN105008595A (zh) | 2015-10-28 |
| KR20150103703A (ko) | 2015-09-11 |
| US20150333193A1 (en) | 2015-11-19 |
| JP2016503964A (ja) | 2016-02-08 |
| US10060045B2 (en) | 2018-08-28 |
| CN105008595B (zh) | 2018-04-13 |
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